公开(公告)号：US09773811B2

公开(公告)日：2017-09-26

申请号：US15049572

申请日：2016-02-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ingolf Lorenz ,  Stefan Block ,  Ulrich Hensel ,  Jürgen Faul ,  Michael Zier ,  Haritez Narisetty

IPC: H01L27/12 ,  H01L23/62 ,  H01L21/00 ,  H01L21/84 ,  H01L21/8234 ,  H01L27/02 ,  H01L29/66

CPC classification number: H01L27/1207 ,  H01L27/0255 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/66121 ,  H01L29/66568 ,  H01L29/861

Abstract: It is provided a semiconductor device comprising a power line, a Silicon-on-Insulator, SOI, substrate comprising a semiconductor layer and a semiconductor bulk substrate comprising a first doped region, a first transistor device formed in and above the SOI substrate and comprising a first gate dielectric formed over the semiconductor layer and a first gate electrode formed over the gate dielectric, a first diode electrically connected to the first gate electrode and a second diode electrically connected to the first diode and the power line; and wherein the first and second diodes are partially formed in the first doped region.

公开(公告)号：US20170243894A1

公开(公告)日：2017-08-24

申请号：US15049572

申请日：2016-02-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ingolf Lorenz ,  Stefan Block ,  Ulrich Hensel ,  Jürgen Faul ,  Michael Zier ,  Haritez Narisetty

IPC: H01L27/12 ,  H01L29/66 ,  H01L27/02

CPC classification number: H01L27/1207 ,  H01L27/0255 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/66121 ,  H01L29/66568 ,  H01L29/861

Abstract: It is provided a semiconductor device comprising a power line, a Silicon-on-Insulator, SOI, substrate comprising a semiconductor layer and a semiconductor bulk substrate comprising a first doped region, a first transistor device formed in and above the SOI substrate and comprising a first gate dielectric formed over the semiconductor layer and a first gate electrode formed over the gate dielectric, a first diode electrically connected to the first gate electrode and a second diode electrically connected to the first diode and the power line; and wherein the first and second diodes are partially formed in the first doped region.