公开(公告)号：US11475926B1

公开(公告)日：2022-10-18

申请号：US17344133

申请日：2021-06-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Xiaoxiao Li ,  Xiaoli Hu ,  Shuangdi Zhao ,  Xi Cao ,  Wei Zhao ,  Xueqiang Dai

IPC: G11C7/02 ,  G11C7/06 ,  G11C7/08

Abstract: The present disclosure relates to integrated circuits, and more particularly, to a sense amplifier circuit for current sensing in a memory structure and methods of manufacture and operation. In particular, the present disclosure relates to a circuit including: a sensing circuit including a first set of transistors, at least one data cell circuit, and a reference cell circuit; a reference voltage holding circuit comprising a second set of transistors and a bitline capacitor; and a comparator differential circuit which receives a data sensing voltage signal from the sensing circuit and a reference voltage level from the reference voltage holding circuit and outputs an output signal.