公开(公告)号：US20160308001A1

公开(公告)日：2016-10-20

申请号：US14908930

申请日：2014-07-14

Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myung Han YOON ,  Se Yeong LEE

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/3205 ,  H01L21/02 ,  B81C1/00 ,  H01L21/306

CPC classification number: H01L29/0676 ,  B81B2203/0361 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02118 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32051 ,  H01L29/16

Abstract: Provided is a method for manufacturing a silicon nanowire array comprising the steps of: positioning plastic particles separated apart from one another in a uniform random pattern on a silicon substrate; forming a catalyst layer between the plastic particles; removing the plastic particles; vertically etching portions of the silicon substrate that contact the catalyst layer; and removing the catalyst layer. The present invention provides a simple and cost-effective process, enables mass-production through large surface area processing, enables the manufacture of nanowire even at a site having limited resources, and enables the structures of nanowire to be individually controlled.

Abstract translation: 提供了一种制造硅纳米线阵列的方法，包括以下步骤：将均匀无规图案彼此分开的塑料颗粒定位在硅衬底上; 在塑料颗粒之间形成催化剂层; 去除塑料颗粒; 垂直蚀刻接触催化剂层的硅衬底的部分; 并除去催化剂层。 本发明提供了一种简单且具有成本效益的方法，能够通过大的表面积处理进行批量生产，甚至能够在具有有限资源的位置制造纳米线，并且能够单独控制纳米线的结构。