公开(公告)号：US20150192487A1

公开(公告)日：2015-07-09

申请号：US14150019

申请日：2014-01-08

Applicant: General Electric Company

Inventor： Nickolai S. Belov ,  Lihua Li ,  Kim Vu ,  Dinh Vu

IPC: G01L9/06 ,  B81C1/00 ,  G01L9/00

CPC classification number: B81C1/00158 ,  B81B3/0072 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0133 ,  G01L9/0044 ,  G01L9/0047 ,  G01L19/0092 ,  G01L19/0618

Abstract: Low pressure sensors and flow sensors are provided. In some embodiments, a pressure sensor can include a sensor die that includes a substrate and a cavity that is formed in a bottom side of the substrate and that defines an elastic element including a thin diaphragm area and a rigid island. A maximum thickness of the rigid island can be substantially smaller than a thickness of the substrate and can be greater than a thickness of the thin diaphragm area. Side walls of the rigid island can be substantially parallel to one another and can be substantially perpendicular to top and bottom surfaces of the wafer and substantially perpendicular to top and bottom surfaces of the die. The side walls of the at least one rigid island can be formed by wet etching the cavity into the die. The wafer can have an impurity diffused in one or more portions thereof prior to the wet etching such that the one or more portions are doped.

Abstract translation: 提供低压传感器和流量传感器。 在一些实施例中，压力传感器可以包括传感器管芯，其包括衬底和形成在衬底的底侧中并且限定包括薄隔膜区域和刚性岛的弹性元件的空腔。 刚性岛的最大厚度可以基本上小于衬底的厚度，并且可以大于薄隔膜面积的厚度。 刚性岛的侧壁可以基本上彼此平行，并且可以基本上垂直于晶片的顶表面和底表面并且基本垂直于管芯的顶表面和底表面。 至少一个刚性岛的侧壁可以通过将腔浸入模具中而形成。 在湿蚀刻之前，晶片可以具有在其一个或多个部分中扩散的杂质，使得一个或多个部分被掺杂。