Tin trap device, extreme ultraviolet light generation apparatus, and electronic device manufacturing method

    公开(公告)号:US11337292B1

    公开(公告)日:2022-05-17

    申请号:US17458148

    申请日:2021-08-26

    Abstract: A tin trap device may include a housing including a gas inlet port into which gas containing tin flows from a chamber device, an internal space which communicates with the gas inlet port, and a gas exhaust port which exhausts the gas while communicating with the internal space; a multiple tube including a plurality of tube members, arranged on a flow path of the gas traveling to the gas exhaust port from the gas inlet port through the internal space, and having a temperature at which the tin deposited from the gas adheres to the tube member; and a gas travel direction changing member configured to change a travel direction of at least fastest gas of the gas traveling from the gas inlet port to the multiple tube.

    Extreme ultraviolet light generation device

    公开(公告)号:US10455679B2

    公开(公告)日:2019-10-22

    申请号:US15836877

    申请日:2017-12-10

    Abstract: The extreme ultraviolet light generation device includes a chamber having a first through-hole that allows a pulse laser beam to enter the chamber, a target supply unit held by the chamber and configured to output a target toward a predetermined region in the chamber, a shield member surrounding the predetermined region in the chamber and having a target path that allows the target outputted from the target supply unit to pass toward the predetermined region, and a tubular member surrounding at least a part of an upstream portion of the trajectory of the target outputted from the target supply unit toward the predetermined region, the upstream portion being upstream from the target path of the shield member.

    Extreme ultraviolet light generation device

    公开(公告)号:US10136510B2

    公开(公告)日:2018-11-20

    申请号:US15583001

    申请日:2017-05-01

    Abstract: An extreme ultraviolet light generation device may include a chamber in which extreme ultraviolet light is generated from plasma, the plasma generated by irradiation of a target supplied in a plasma generation region inside of the chamber with laser light; a condenser mirror collecting the extreme ultraviolet light and guiding it to outside of the chamber; a first etching gas supply unit blowing an etching gas to a reflective surface of the condenser mirror and the plasma generation region; a magnet forming a magnetic field in the chamber; a port that intersects a central axis of the magnetic field and that takes in suspended substances generated in the chamber; and an ejection path that is in communication with the port and that ejects the suspended substances taken from the port to the outside of the chamber.

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