公开(公告)号：US11963450B2

公开(公告)日：2024-04-16

申请号：US18448861

申请日：2023-08-11

Applicant: Guangdong University of Technology

Inventor： Yun Chen ,  Pengfei Yu ,  Aoke Song ,  Zijian Li ,  Maoxiang Hou ,  Xin Chen

IPC: H10N30/082 ,  B82Y40/00 ,  H10N30/081 ,  B82Y10/00 ,  H10N30/30

CPC classification number: H10N30/082 ,  H10N30/081 ,  B82Y10/00 ,  B82Y40/00 ,  H10N30/30 ,  Y10T29/42

Abstract: A method for manufacturing a core-shell coaxial gallium nitride (GaN) piezoelectric nanogenerator is provided. A mask covering a center part of a gallium nitride wafer is removed. An electrodeless photoelectrochemical etching is performed on the gallium nitride wafer to form a primary GaN nanowire array on a surface of the gallium nitride wafer. A precious metal layer provided on the surface of the gallium nitride wafer is removed and an alumina layer is deposited on the surface of the gallium nitride wafer to cover the primary GaN nanowire array to obtain a core-shell coaxial GaN nanowire array. A first conductive layer is provided on a flexible substrate to which the core-shell coaxial GaN nanowire array is transferred. A second conductive layer is provided at a top end of the core-shell coaxial GaN nanowire array, and is connected to an external circuit to obtain the core-shell coaxial GaN piezoelectric nanogenerator.

公开(公告)号：US11969771B2

公开(公告)日：2024-04-30

申请号：US18359139

申请日：2023-07-26

Applicant: Guangdong University of Technology

Inventor： Yun Chen ,  Biao Li ,  Aoke Song ,  Shankun Dong ,  Shengbao Lai ,  Maoxiang Hou ,  Xin Chen

IPC: B08B7/02 ,  B06B1/06 ,  G03F7/40

CPC classification number: B08B7/028 ,  B06B1/0688 ,  B06B2201/56 ,  B06B2201/71 ,  G03F7/405

Abstract: A method of fabricating a film vibration device, including: photoetching a surface of a silicon wafer to form a circular-hole array; etching an aluminum layer on the silicon wafer; etching the silicon wafer to form a through-hole array to obtain a porous silicon wafer; attaching a polyethylene terephthalate (PET) sheet to a side of the porous silicon wafer; ablating the PET sheet to obtain a porous PET film; attaching a polyvinylidene fluoride (PVDF) film to a lower side of the porous silicon wafer; performing vacuumization above the porous silicon wafer, while heating the PVDF film below the porous silicon wafer to create dome micro-structures on the PVDF film; and laminating the porous PET film on each of two sides of the PVDF film to obtain the film vibration device. This application also provides a cleaning device having the film vibration device.