公开(公告)号：US11969771B2

公开(公告)日：2024-04-30

申请号：US18359139

申请日：2023-07-26

Applicant: Guangdong University of Technology

Inventor： Yun Chen ,  Biao Li ,  Aoke Song ,  Shankun Dong ,  Shengbao Lai ,  Maoxiang Hou ,  Xin Chen

IPC: B08B7/02 ,  B06B1/06 ,  G03F7/40

CPC classification number: B08B7/028 ,  B06B1/0688 ,  B06B2201/56 ,  B06B2201/71 ,  G03F7/405

Abstract: A method of fabricating a film vibration device, including: photoetching a surface of a silicon wafer to form a circular-hole array; etching an aluminum layer on the silicon wafer; etching the silicon wafer to form a through-hole array to obtain a porous silicon wafer; attaching a polyethylene terephthalate (PET) sheet to a side of the porous silicon wafer; ablating the PET sheet to obtain a porous PET film; attaching a polyvinylidene fluoride (PVDF) film to a lower side of the porous silicon wafer; performing vacuumization above the porous silicon wafer, while heating the PVDF film below the porous silicon wafer to create dome micro-structures on the PVDF film; and laminating the porous PET film on each of two sides of the PVDF film to obtain the film vibration device. This application also provides a cleaning device having the film vibration device.