公开(公告)号：US10468265B1

公开(公告)日：2019-11-05

申请号：US16383885

申请日：2019-04-15

Applicant: Guangdong University of Technology

Inventor： Xin Chen ,  Yun Chen ,  Dachuang Shi ,  Xun Chen ,  Qiang Liu ,  Jian Gao ,  Chengqiang Cui

IPC: H01L31/0216 ,  B81C1/00 ,  H01L21/308 ,  H01L21/306

Abstract: A method for synchronous wet etching processing of differential microstructures, including the following steps: step a: performing photoetching on a processing surface of a workpiece to be processed to develop the workpiece; step b: affixing a mask to a surface opposite to the processing surface of the workpiece; step c: continuously cooling the mask; step d: placing the cooled mask and the workpiece in a wet etching device; and adding an etchant to the processing surface of the workpiece to start etching; step e: removing the mask and the workpiece from the wet etching device after the set etching time; separating the mask and the workpiece to obtain a workpiece with a etching structure. A temperature difference is formed between the pattern area to be processed and the retaining area.

公开(公告)号：US11212921B2

公开(公告)日：2021-12-28

申请号：US17110501

申请日：2020-12-03

Applicant: Guangdong University of Technology

Inventor： Chengqiang Cui ,  Guannan Yang ,  Guangdong Xu ,  Yu Zhang ,  Xin Chen

IPC: H05K3/22 ,  H05K3/26 ,  H05K1/09 ,  H05K3/28

Abstract: A method for repairing a fine line is provided. Nano metal particles are filled in a defect of a circuit board. The nano metal particles in the defect are irradiated by a laser, or heated, such that the nano metal particles in the defect are metallurgically bonded to an original line of the circuit board. A surface of the circuit board is cleaned to remove residual nano metal particles on parts of the circuit board where metallurgical bonding is not performed, thereby completing line repairing of the circuit board.

公开(公告)号：US11742316B2

公开(公告)日：2023-08-29

申请号：US17897086

申请日：2022-08-26

Applicant: GUANGDONG UNIVERSITY OF TECHNOLOGY

Inventor： Yu Zhang ,  Chengqiang Cui ,  Peilin Liang ,  Jin Tong ,  Guannan Yang

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/11015 ,  H01L2224/1181 ,  H01L2224/16227 ,  H01L2224/81007 ,  H01L2224/81055 ,  H01L2224/8184 ,  H01L2224/81203 ,  H01L2224/81207 ,  H01L2224/81224 ,  H01L2224/81911 ,  H01L2924/381 ,  H01L2924/3841

Abstract: This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.