公开(公告)号：US12113080B2

公开(公告)日：2024-10-08

申请号：US17285201

申请日：2019-09-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryo Takiguchi ,  Makoto Kono ,  Keiichi Ota ,  Tetsuya Taka

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14643

Abstract: A solid-state imaging device according to the disclosure includes a semiconductor substrate which has a main surface having a plurality of photosensitive regions, and an insulating film which is provided on the main surface of the semiconductor substrate. When the main surface of the semiconductor substrate is taken as a reference surface, a thickness of the insulating film from the reference surface is 0.5 μm or more, a surface (a main surface) of the insulating film on the side opposite to the main surface is a surface having flatness, and a plurality of types of bottom surfaces of which depths from the reference surface are different from each other are provided on the main surface of the semiconductor substrate in the photosensitive regions.

公开(公告)号：US11917314B2

公开(公告)日：2024-02-27

申请号：US17767141

申请日：2020-09-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryo Takiguchi ,  Shinya Ito ,  Makoto Iwashita ,  Mitsuaki Kageyama

IPC: H04N25/75 ,  G01N21/64

CPC classification number: H04N25/75 ,  G01N21/6456

Abstract: An image sensor includes a plurality of pixels. Each pixel includes a photoelectric conversion portion, a reset gate for controlling removal of a charge accumulated in the photoelectric conversion portion, a charge accumulation portion, an accumulation gate for controlling a transfer of the charge from the photoelectric conversion portion to the charge accumulation portion, and a readout gate for controlling readout of the charge from the charge accumulation portion. The reset gate removes the charge generated in the photoelectric conversion portion by excitation light. The accumulation gate transfers the charge generated in the photoelectric conversion portion by fluorescence to the charge accumulation portion. The readout gate performs control for reading out the charge after the charge transfer is performed n times. The number n of the charge transfers is set for each pixel.