公开(公告)号：US12113080B2

公开(公告)日：2024-10-08

申请号：US17285201

申请日：2019-09-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryo Takiguchi ,  Makoto Kono ,  Keiichi Ota ,  Tetsuya Taka

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14643

Abstract: A solid-state imaging device according to the disclosure includes a semiconductor substrate which has a main surface having a plurality of photosensitive regions, and an insulating film which is provided on the main surface of the semiconductor substrate. When the main surface of the semiconductor substrate is taken as a reference surface, a thickness of the insulating film from the reference surface is 0.5 μm or more, a surface (a main surface) of the insulating film on the side opposite to the main surface is a surface having flatness, and a plurality of types of bottom surfaces of which depths from the reference surface are different from each other are provided on the main surface of the semiconductor substrate in the photosensitive regions.