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公开(公告)号:US20170047197A1
公开(公告)日:2017-02-16
申请号:US15305740
申请日:2015-04-21
Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
Inventor: Shoji HOTTA , Hiroki KAWADA , Osamu INOUE
CPC classification number: H01J37/28 , G01B15/04 , G03F7/70633 , G03F9/7061 , H01J37/22 , H01J2237/2803
Abstract: For scanning electron beams and measuring overlay misalignment between an upper layer pattern and a lower layer pattern with high precision, electron beams are scanned over a region including a first pattern and a second pattern of a sample, the sample having the lower layer pattern (the first pattern) and the upper layer pattern (the second pattern) formed in a step after a step of forming the first pattern. The electron beams are scanned such that scan directions and scan sequences of the electron beams become axial symmetrical or point-symmetrical in a plurality of pattern position measurement regions defined within the scan region for the electron beams, thereby reducing measurement errors resulting from the asymmetry of electric charge.
Abstract translation: 对于扫描电子束和以高精度测量上层图案和下层图案之间的重叠不对准,在包括样品的第一图案和第二图案的区域上扫描电子束,具有较低层图案的样品( 第一图案)和在形成第一图案的步骤之后的步骤中形成的上层图案(第二图案)。 扫描电子束,使得电子束的扫描方向和扫描顺序在限定在电子束的扫描区域内的多个图形位置测量区域中成为轴对称或点对称,从而减少由于不对称而导致的测量误差 电荷。