MULTILAYER REFLECTIVE FILM-ATTACHED SUBSTRATE, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

    公开(公告)号:US20240411220A1

    公开(公告)日:2024-12-12

    申请号:US18701869

    申请日:2022-10-26

    Abstract: [Problem] To obtain a substrate with a multilayer reflective film capable of suppressing a decrease in reflectance of a multilayer reflective film with respect to EUV light for the substrate with a multilayer reflective film having a structure in which a protective film containing metal is disposed.
    [Solution] A substrate with a multilayer reflective film includes a substrate, a multilayer reflective film on the substrate, and a protective film on the multilayer reflective film. The protective film includes a silicon-containing layer, a first layer, a second layer, and a third layer in this order on the multilayer reflective film. The protective film contains metal and nitrogen. When a nitrogen content of the first layer is represented by N1, a nitrogen content of the second layer is represented by N2, and a nitrogen content of the third layer is represented by N3, N2 is larger than N1 and N3.

Patent Agency Ranking