Abstract:
A method for extracting a critical dimension of a semiconductor nanostructure. The method includes: 1) determining a value range for each parameter to be extracted, whereby generating an electronic spectra database, and employing training spectra and support vector machine (SVM) training networks for training of SVMs; 2) employing the SVMs after training to map measured spectra to yield a corresponding electronic spectra database; and 3) employing a searching algorithm to search for an optimum simulation spectrum in the corresponding electronic spectra database, simulation parameters corresponding to the simulation spectrum being the critical dimension of the semiconductor nanostructure to be extracted.
Abstract:
The invention discloses a method for obtaining the complex refractive index distribution profile of a film. S101, the interference image of the reference area and the sample under test is collected; S102, the normalized light intensity map and the optical path difference of the sample under test relative to the reference area is determined through the recovery algorithm based on the obtained interference image; S103, the measurement model is established based on the reflective film transmission matrix model; S104, the relationship between the measured reflection coefficient and optical path difference of the area under test of the sample under test relative to the reference area and the measurement model is determined; S105, the complex refractive index distribution profile of the film under test is calculated based on the measured reflection coefficient and optical path difference of the area under test of the film relative to the reference area and the relationship.