Method for extracting critical dimension of semiconductor nanostructure
    1.
    发明授权
    Method for extracting critical dimension of semiconductor nanostructure 有权
    提取半导体纳米结构临界尺寸的方法

    公开(公告)号:US09070091B2

    公开(公告)日:2015-06-30

    申请号:US13754925

    申请日:2013-01-31

    CPC classification number: G06N99/005

    Abstract: A method for extracting a critical dimension of a semiconductor nanostructure. The method includes: 1) determining a value range for each parameter to be extracted, whereby generating an electronic spectra database, and employing training spectra and support vector machine (SVM) training networks for training of SVMs; 2) employing the SVMs after training to map measured spectra to yield a corresponding electronic spectra database; and 3) employing a searching algorithm to search for an optimum simulation spectrum in the corresponding electronic spectra database, simulation parameters corresponding to the simulation spectrum being the critical dimension of the semiconductor nanostructure to be extracted.

    Abstract translation: 一种用于提取半导体纳米结构的临界尺寸的方法。 该方法包括:1)确定要提取的每个参数的值范围,从而生成电子光谱数据库,并使用训练光谱和支持向量机(SVM)训练网络进行训练; 2)训练后采用SVM映射测得的光谱,得到相应的电子光谱数据库; 和3)采用搜索算法在对应的电子光谱数据库中搜索最佳模拟光谱,对应于模拟光谱的模拟参数是要提取的半导体纳米结构的临界尺寸。

    Method, device and computer-readable storage medium for obtaining complex refractive index distribution profile of film

    公开(公告)号:US12270982B1

    公开(公告)日:2025-04-08

    申请号:US18906132

    申请日:2024-10-03

    Abstract: The invention discloses a method for obtaining the complex refractive index distribution profile of a film. S101, the interference image of the reference area and the sample under test is collected; S102, the normalized light intensity map and the optical path difference of the sample under test relative to the reference area is determined through the recovery algorithm based on the obtained interference image; S103, the measurement model is established based on the reflective film transmission matrix model; S104, the relationship between the measured reflection coefficient and optical path difference of the area under test of the sample under test relative to the reference area and the measurement model is determined; S105, the complex refractive index distribution profile of the film under test is calculated based on the measured reflection coefficient and optical path difference of the area under test of the film relative to the reference area and the relationship.

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