公开(公告)号：US5819858A

公开(公告)日：1998-10-13

申请号：US415078

申请日：1995-03-30

Applicant: Helmut Nechansky

Inventor： Helmut Nechansky

IPC: H01L21/48 ,  H01L23/367 ,  H01L23/373 ,  H05K1/03 ,  H05K1/05 ,  H05K3/02 ,  H05K3/04 ,  H05K3/10 ,  H05K3/40 ,  H05K3/44 ,  H05K7/20 ,  H05K1/00

CPC classification number: H05K3/101 ,  H01L21/4857 ,  H01L23/367 ,  H01L23/3733 ,  H05K3/02 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/15174 ,  H05K1/0306 ,  H05K1/053 ,  H05K2201/0116 ,  H05K2201/0382 ,  H05K2201/1059 ,  H05K2203/128 ,  H05K3/04 ,  H05K3/107 ,  H05K3/4092 ,  H05K3/44

Abstract: A circuit board includes a substrate of ceramic material and conductive strips in form of a metal layer which is cast onto the surface of the substrate and formed through locally stripping metal layer from the substrate surface. The circuit board further includes a recess for receiving an inlay of metal matrix composite material.

Abstract translation: 电路板包括陶瓷材料基片和金属层形式的导电条，其被铸造到基片的表面上，并通过从衬底表面局部剥离金属层形成。 电路板还包括用于接收金属基质复合材料的嵌体的凹部。

公开(公告)号：US5873402A

公开(公告)日：1999-02-23

申请号：US632792

申请日：1996-04-17

Applicant: Helmut Nechansky ,  Theodor Schmitt

Inventor： Helmut Nechansky ,  Theodor Schmitt

IPC: B23H9/00 ,  C04B37/02 ,  H01L21/50 ,  B22D19/00 ,  B22D17/00

CPC classification number: H01L21/50 ,  C04B35/645 ,  C04B37/001 ,  C04B37/021 ,  B23H9/00 ,  C04B2237/121 ,  C04B2237/30 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/346 ,  C04B2237/361 ,  C04B2237/363 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/401 ,  C04B2237/402 ,  C04B2237/403 ,  C04B2237/405 ,  C04B2237/406 ,  C04B2237/407 ,  C04B2237/61 ,  C04B2237/64 ,  C04B2237/68 ,  C04B2237/84 ,  C04B2237/86 ,  H01L2924/0002

Abstract: A process of making a casing having at least one open end and formed with electric conducting passages and connections for electronic components or switching circuits, includes the following steps: preparing a formed body, made of ceramics, glass, glass-ceramics, metal or silicon carbide, with passageways in form of bores and/or indentations, placing the formed body in a mold and pouring liquid metal in the mold to surround the formed body, thereby filling the first passageways, and removing metal from the formed body to leave metal only in the first passageways.

Abstract translation: 一种制造具有至少一个开口端并且形成有用于电子部件或开关电路的导电通道和连接的壳体的方法包括以下步骤：制备由陶瓷，玻璃，玻璃陶瓷，金属或硅制成的成形体 碳化物，其具有孔和/或压痕形式的通道，将成形体放置在模具中并将液态金属倾倒在模具中以围绕成形体，从而填充第一通道，并从成形体除去金属以仅留下金属 在第一个通道。

公开(公告)号：US5985464A

公开(公告)日：1999-11-16

申请号：US796230

申请日：1997-02-06

Applicant: Theodore Nicolas Schmitt ,  Helmut Nechansky

Inventor： Theodore Nicolas Schmitt ,  Helmut Nechansky

IPC: B22D19/04 ,  C04B37/00 ,  C04B37/02 ,  H01L23/373 ,  B32B15/04

CPC classification number: B22D19/04 ,  C04B37/006 ,  C04B37/026 ,  H01L23/3735 ,  C04B2237/12 ,  C04B2237/121 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/16 ,  C04B2237/343 ,  C04B2237/36 ,  C04B2237/363 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/403 ,  C04B2237/405 ,  C04B2237/406 ,  C04B2237/407 ,  C04B2237/408 ,  C04B2237/52 ,  C04B2237/64 ,  C04B2237/76 ,  C04B2237/80 ,  C04B2237/82 ,  C04B2237/86 ,  H01L2924/0002 ,  Y10T428/24322 ,  Y10T428/24777 ,  Y10T428/24917 ,  Y10T428/30 ,  Y10T428/31504 ,  Y10T428/31678

Abstract: A composite structure includes a first nonmetallic component and a second mponent of metal or nonmetal, with the first and second components being joined together by a bonding material which is so introduced by way of a casting process as to permeate to an area between the first and second components.

Abstract translation: 复合结构包括第一非金属组分和金属或非金属的第二组分，其中第一和第二组分通过粘合材料连接在一起，所述粘合材料通过铸造工艺被引入以渗透到第一和第 第二组件。

公开(公告)号：US5925413A

公开(公告)日：1999-07-20

申请号：US823598

申请日：1997-03-25

Applicant: Hermann Holzer ,  Roland Haubner ,  Benno Lux ,  Helmut Nechansky

Inventor： Hermann Holzer ,  Roland Haubner ,  Benno Lux ,  Helmut Nechansky

IPC: C23C16/02 ,  C23C16/26 ,  C23C16/27 ,  B05D3/10

CPC classification number: C23C16/27 ,  C23C16/0227

Abstract: A method of depositing a polycrystalline diamond layer on a nitride substrate is disclosed, which comprises chemically-etching the nitride substrate with a KOH or NaOH solution or melt and depositing the polycrystalline diamond layer on the nitride substrate from a vapor phase, wherein the etching temperature, time and concentration of the etchant are controlled so that at least 75% of the interface between the substrate and the diamond layer is covered by diamond crystals, each diamond crystal having a contact area with the substrate of .gtoreq.20 um.sup.2.

Abstract translation: 公开了一种在氮化物衬底上沉积多晶金刚石层的方法，其中包括用KOH或NaOH溶液或熔融物对氮化物衬底进行化学蚀刻，并从气相沉积氮化物衬底上的多晶金刚石层，其中蚀刻温度 控制蚀刻剂的时间和浓度，使得衬底和金刚石层之间的界面的至少75％被金刚石晶体覆盖，每个金刚石晶体与衬底的接触面积为≥20μm2。