公开(公告)号：US20230352274A1

公开(公告)日：2023-11-02

申请号：US17433693

申请日：2020-12-24

Applicant: Hitachi High-Tech Corporation

Inventor： Hitoshi Tamura ,  Norihiko Ikeda ,  Chen Pin Hsu

IPC: H01J37/32

CPC classification number: H01J37/32311 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32247 ,  H01J2237/334

Abstract: A plasma processing apparatus includes: a vacuum chamber that includes a plasma processing chamber in which a substrate is to be plasma-processed and that can exhaust an inside of the plasma processing chamber to vacuum; and a microwave power supply unit that supplies a microwave power to the vacuum chamber via a circular waveguide. The vacuum chamber includes: a parallel flat plate line portion that is connected to the circular waveguide and receives a microwave power propagated from the circular waveguide; a ring resonator unit that is disposed on an outer periphery of the parallel flat plate line portion and receives the microwave power propagated from the parallel flat plate line portion; a cavity portion that receives a microwave power radiated from a slot antenna formed in the ring resonator unit; and a microwave introduction window that separates the cavity portion from the plasma processing chamber. The parallel flat plate line portion includes a phase adjusting unit for adjusting a phase of microwaves propagating from the parallel flat plate line portion to the ring resonator unit at a boundary portion with the ring resonator unit.

公开(公告)号：US20220344132A1

公开(公告)日：2022-10-27

申请号：US17433327

申请日：2020-04-30

Applicant: Hitachi High-Tech Corporation

Inventor： Chen Pin Hsu ,  Hitoshi Tamura

IPC: H01J37/32 ,  H01P3/16

Abstract: In order to enable plasma density distribution control having a high degree of freedom to solve problems of not only in-plane uniformity of an etching processing but also a reduction of a charge-up damage, a plasma processing apparatus includes: a vacuum chamber provided with a plasma processing chamber that plasma-processes a substrate inside and is able to exhaust the inside of this plasma processing chamber to a vacuum; and a microwave power supply unit that is provided with a microwave source and a circular waveguide and supplies, via the circular waveguide, a microwave power oscillated from the microwave source to the vacuum chamber, in which the microwave power supply unit is configured by arranging a plurality of waveguides, which are coaxially and concentrically arranged with the circular waveguide and have different dielectric constants inside, between the circular waveguide and the vacuum chamber.

公开(公告)号：US12002655B2

公开(公告)日：2024-06-04

申请号：US17433327

申请日：2020-04-30

Applicant: Hitachi High-Tech Corporation

Inventor： Chen Pin Hsu ,  Hitoshi Tamura

IPC: H01J37/32

CPC classification number: H01J37/32229 ,  H01J37/32266 ,  H01J37/32678

Abstract: In order to enable plasma density distribution control having a high degree of freedom to solve problems of not only in-plane uniformity of an etching processing but also a reduction of a charge-up damage, a plasma processing apparatus includes: a vacuum chamber provided with a plasma processing chamber that plasma-processes a substrate inside and is able to exhaust the inside of this plasma processing chamber to a vacuum; and a microwave power supply unit that is provided with a microwave source and a circular waveguide and supplies, via the circular waveguide, a microwave power oscillated from the microwave source to the vacuum chamber, in which the microwave power supply unit is configured by arranging a plurality of waveguides, which are coaxially and concentrically arranged with the circular waveguide and have different dielectric constants inside, between the circular waveguide and the vacuum chamber.

公开(公告)号：US11948776B2

公开(公告)日：2024-04-02

申请号：US17641503

申请日：2021-01-21

Applicant: Hitachi High-Tech Corporation

Inventor： Chen Pin Hsu ,  Hitoshi Tamura

IPC: H01J37/00 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32229 ,  H01J37/32266 ,  H01J37/32495 ,  H05H1/46 ,  H01J37/32311 ,  H01J2237/334

Abstract: A plasma processing apparatus adapted to reduce non-uniformity of plasma distribution in a process chamber and to adjust the plasma distribution to “centrally high density”, “circumferentially high density”, or “uniform density” in accordance with a desired etching process, a process chamber; a radio frequency power source; a rectangular waveguide; and a circular waveguide connected to the rectangular waveguide, in which the rectangular waveguide includes an upper rectangular waveguide and a lower rectangular waveguide formed by vertically dividing the rectangular waveguide; and a cutoff section which cuts off the microwave frequency power and which has a dielectric body. The circular waveguide includes an inner waveguide connected to the upper rectangular waveguide and formed inside; and an outer waveguide connected to the lower rectangular waveguide and formed on an outer side of the inner waveguide. The cutoff section has a width narrower than those of the rectangular waveguides except the cutoff section.

公开(公告)号：US20230352273A1

公开(公告)日：2023-11-02

申请号：US17641503

申请日：2021-01-21

Applicant: Hitachi High-Tech Corporation

Inventor： Chen Pin Hsu ,  Hitoshi Tamura

IPC: H01J37/32

CPC classification number: H01J37/32229 ,  H01J37/32495 ,  H01J37/32266 ,  H01J2237/334

Abstract: A plasma processing apparatus adapted to reduce non-uniformity of plasma distribution in a process chamber and to adjust the plasma distribution to “centrally high density”, “circumferentially high density”, or “uniform density” in accordance with a desired etching process, a process chamber; a radio frequency power source; a rectangular waveguide; and a circular waveguide connected to the rectangular waveguide, in which the rectangular waveguide includes an upper rectangular waveguide and a lower rectangular waveguide formed by vertically dividing the rectangular waveguide; and a cutoff section which cuts off the microwave frequency power and which has a dielectric body. The circular waveguide includes an inner waveguide connected to the upper rectangular waveguide and formed inside; and an outer waveguide connected to the lower rectangular waveguide and formed on an outer side of the inner waveguide. The cutoff section has a width narrower than those of the rectangular waveguides except the cutoff section.