公开(公告)号：US20230238290A1

公开(公告)日：2023-07-27

申请号：US18152252

申请日：2023-01-10

Applicant: Hitachi High-Tech Corporation

Inventor： Naoaki KONDO ,  Yuki DOI ,  Atsushi MIYAMOTO ,  Hideki NAKAYAMA ,  Hirohiko KITSUKI

IPC: H01L21/66 ,  G06T7/13 ,  H01J37/28 ,  G01N21/956 ,  G01N21/95

CPC classification number: H01L22/12 ,  G06T7/13 ,  H01J37/28 ,  G01N21/95607 ,  G01N21/9503 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: A defect observation method includes, as steps executed by a computer system, a first step of acquiring, as a bevel image, an image captured using defect candidate coordinates in a bevel portion as an imaging position by using a microscope or an imaging apparatus; and a second step of detecting a defect in the bevel image. The second step includes a step of determining whether there is at least one portion among a wafer edge, a wafer notch, and an orientation flat in the bevel image, a step of switching and selectively applying a defect detection scheme of detecting the defect from the bevel image from a plurality of schemes which are candidates based on a determination result, and a step of executing a process of detecting the defect from the bevel image in conformity with the switched scheme.