公开(公告)号：US09904171B2

公开(公告)日：2018-02-27

申请号：US15007173

申请日：2016-01-26

Applicant: I-Shan Ke

Inventor： Yu-Hsun Lin

IPC: G03F7/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/039 ,  G03F7/038

CPC classification number: G03F7/327 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/2059 ,  G03F7/322 ,  G03F7/38

Abstract: A positive tone photoresist etching development agent for a photoresist film containing acid liable groups includes 0.5 to 2% by weight of tetramethylammonium hydroxide (TMAH), 1 to 20% by weight of an additive having at least two polar functional groups and at least one solvent. The additive has a molecular weight higher than 40, the solvent is water or alcohol, and the agent treated photoresist film retains at least 20% of acid liable groups.

公开(公告)号：US09482957B1

公开(公告)日：2016-11-01

申请号：US14738946

申请日：2015-06-15

Applicant: I-Shan Ke

Inventor： Yu-Hsun Lin

IPC: G03F7/40 ,  C11D11/00 ,  G03F7/42 ,  B05D1/00 ,  H01L21/02 ,  G03F7/16 ,  C11D3/20 ,  C11D3/22

CPC classification number: G03F7/422 ,  B05D1/005 ,  B05D3/104 ,  C11D3/2068 ,  C11D3/226 ,  C11D7/5022 ,  C11D11/0047 ,  G03F7/0048 ,  G03F7/16 ,  G03F7/168 ,  H01L21/02282

Abstract: The present disclosure provides a solvent for reducing resist consumption, which includes a first solvent selected from the group consisting of alkylene glycol alkyl ether acetate, alkylene glycol alkyl ether and a combination thereof, and a second solvent having a hydrogen bonding Hansen parameter lower than 5.34 and an evaporation rate (n-BuAc=1) lower than 0.6. A volume ratio of the first solvent to the second solvent is in a range of 0/100 to 90/10. A resist dispense volume for a 300 mm wafer is less than 0.6 cc, or a resist dispense volume for a 450 mm wafer is less than 1.1 cc.

Abstract translation: 本公开内容提供了用于降低抗蚀剂消耗的溶剂，其包括选自亚烷基二醇烷基醚乙酸酯，亚烷基二醇烷基醚及其组合的第一溶剂和具有低于5.34的氢键Hansen参数的第二溶剂 和蒸发速率（n-BuAc = 1）低于0.6。 第一溶剂与第二溶剂的体积比在0/100〜90/10的范围内。 用于300mm晶片的抗蚀剂分配体积小于0.6cc，或者450mm晶片的抗蚀剂分配体积小于1.1cc。

公开(公告)号：US09508558B2

公开(公告)日：2016-11-29

申请号：US14591044

申请日：2015-01-07

Applicant: I-Shan Ke

Inventor： Yu-Hsun Lin

IPC: C11D7/50 ,  H01L21/306 ,  H01L21/308 ,  C11D11/00 ,  H01L21/67

CPC classification number: H01L21/30604 ,  C11D7/5013 ,  C11D7/5018 ,  C11D11/0041 ,  G03F7/168 ,  H01L21/3081 ,  H01L21/6708

Abstract: The present disclosure provides a wafer treatment solution for edge-bead removal, edge film hump reduction and resist surface smooth. The wafer treatment solution includes a solution and a fluorine-containing additive mixed in the solution. The fluorine-containing additive has a following formula (I): Rf—X—(CH2CH2O)m—R1 (I); or a following formula (II): An apparatus and a method by using the wafer treatment solution are also provided herein.

公开(公告)号：US20160056049A1

公开(公告)日：2016-02-25

申请号：US14591044

申请日：2015-01-07

Applicant: I-SHAN KE

Inventor： Yu-Hsun Lin

IPC: H01L21/306 ,  H01L21/308 ,  C11D7/50 ,  H01L21/67

CPC classification number: H01L21/30604 ,  C11D7/5013 ,  C11D7/5018 ,  C11D11/0041 ,  G03F7/168 ,  H01L21/3081 ,  H01L21/6708

Abstract: The present disclosure provides a wafer treatment solution for edge-bead removal, edge film hump reduction and resist surface smooth. The wafer treatment solution includes a solution and a fluorine-containing additive mixed in the solution. The fluorine-containing additive has a following formula (I): Rf—X—(CH2CH2O)m—R1 (I); or a following formula (II): An apparatus and a method by using the wafer treatment solution are also provided herein.

Abstract translation: 本公开提供了用于边缘珠去除，边缘膜隆起减小和抗蚀剂表面光滑的晶片处理溶液。 晶片处理溶液包括在溶液中混合的溶液和含氟添加剂。 含氟添加剂具有下式（I）：Rf-X-（CH 2 CH 2 O）m -R 1（I）; 或下述式（II）表示：本发明还提供了使用晶片处理液的装置和方法。