公开(公告)号：US20180217036A1

公开(公告)日：2018-08-02

申请号：US15747517

申请日：2016-08-16

Applicant: IAS Inc.

Inventor： Katsuhiko Kawabata ,  Tatsuya Ichinose ,  Hayashi Takuma

IPC: G01N1/40 ,  G01N1/32 ,  G01N27/62 ,  H01L21/677 ,  H01L21/68 ,  H01L21/67

CPC classification number: G01N1/4044 ,  G01N1/28 ,  G01N1/32 ,  G01N27/62 ,  H01L21/67017 ,  H01L21/67034 ,  H01L21/67069 ,  H01L21/67253 ,  H01L21/6773 ,  H01L21/67742 ,  H01L21/68

Abstract: A silicon substrate analyzing device with which impurities such as trace metals in a silicon substrate having a thick nitride film or oxide film formed on a silicon substrate surface can be analyzed with a high precision by ICP-MS. The silicon substrate analyzing device includes a load port, a substrate transportation robot, an aligner, a drying chamber, a gas-phase decomposition chamber, an analysis scan port having an analysis stage and a substrate analyzing nozzle, an analysis liquid collecting means, and an analysis means for performing inductively coupled plasma mass spectrometry. The silicon substrate having an oxide film or a nitride film formed on the silicon substrate is subjected to scanning the surface of the silicon substrate with a high-concentration recovered liquid with use of the substrate analyzing nozzle so that the high-concentration recovered liquid is recovered. The recovered high-concentration recovered liquid is discharged onto the surface of the silicon substrate and then heated and dried. The surface of the silicon substrate is scanned with the analysis liquid so that the impurities are recovered, and the analysis liquid is analyzed by ICP-MS.