公开(公告)号：US12265046B2

公开(公告)日：2025-04-01

申请号：US17398169

申请日：2021-08-10

Applicant: INDIAN INSTITUTE OF SCIENCE

Inventor： Neha Sakhuja ,  Ravindra Kumar Jha ,  Ranajit Sai ,  Navakanta Bhat

IPC: G01N27/12 ,  C23C26/00 ,  H01L21/02 ,  H01L29/06 ,  H01L29/267

Abstract: An example heterostructure semiconductor for sensing a gas comprises a substrate made of nanosheets of a compound of a first metal, wherein the compound of the first metal is sensitive to the gas to be sensed; one or more 1-Dimensional (1D) components fabricated on a surface of the substrate, the 1D components comprising a compound of a second metal, wherein the compound of the second metal is selective to the gas to be sensed; and a 2-Dimensional (2D) layer formed on the surface of the substrate in portions excluding the 1D components, wherein the 2D layer comprises compounds of the first and second metal. Method of fabrication of the heterostructure semiconductor and a chemiresistive sensor made thereof are also disclosed.