公开(公告)号：US10931262B2

公开(公告)日：2021-02-23

申请号：US16210788

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Hans-Joerg Timme ,  Ruediger Bauder

IPC: H03H9/58 ,  H03H9/54 ,  H03H7/01 ,  H03H9/64 ,  H03H9/52 ,  H03H9/05 ,  H03H9/60 ,  H04B1/00 ,  H03H3/02 ,  H03H11/12 ,  H04B1/10 ,  H04B1/40 ,  H03H9/02 ,  H03H9/17 ,  H03H9/48 ,  H03H9/00 ,  H03H9/66 ,  H04B1/04 ,  H04B1/50 ,  H03H7/12 ,  H03H7/46 ,  H04B1/525 ,  H03F3/19 ,  H03F3/21 ,  H03H9/70 ,  H04B1/18 ,  H03J3/20 ,  H03H9/205 ,  H01L41/187 ,  H03J1/00

Abstract: A resonator element for use in a filter is provided. The resonator element includes a first resonator acoustically coupled to a second or third resonator or both. The first resonator has terminals for incorporation in a filter structure. A tuning circuit is coupled to the second or third resonator or both to enable tuning of the resonator element. The tuning circuit includes a variable capacitor and an inductor.

公开(公告)号：US10679978B2

公开(公告)日：2020-06-09

申请号：US15952282

申请日：2018-04-13

Applicant: Infineon Technologies AG

Inventor： Alexander Roth ,  Juergen Hoegerl ,  Hans-Joachim Schulze ,  Hans-Joerg Timme

IPC: H01L25/00 ,  H01L23/14 ,  H01L23/373 ,  H01L21/48 ,  H01L25/18 ,  H01L23/495 ,  H01L21/56 ,  H01L25/16 ,  H01L23/498 ,  H01L23/31

Abstract: A module is disclosed. In one example, the module includes a carrier, an at least partially thermally conductive and electrically insulating body mounted on only a part of a main surface of the carrier, an at least partially electrically conductive redistribution structure on the thermally conductive and electrically insulating body, an electronic chip mounted on the redistribution structure and above the thermally conductive and electrically insulating body, and an encapsulant encapsulating at least part of the carrier, at least part of the thermally conductive and electrically insulating body, at least part of the redistribution structure, and at least part of the electronic chip.

公开(公告)号：US10404233B2

公开(公告)日：2019-09-03

申请号：US15491711

申请日：2017-04-19

Applicant: Infineon Technologies AG

Inventor： Ruediger Bauder ,  Hans-Joerg Timme

IPC: H03H9/54 ,  H01L41/047 ,  H01L41/107 ,  H03H3/02 ,  H03H9/205 ,  H03H9/58 ,  H03H9/60

Abstract: A resonator element for use in a filter is provided. The resonator element includes a first resonator acoustically coupled to a second resonator. The first resonator has terminals for incorporation in a filter structure. A tuning circuit is coupled to the second resonator to enable tuning of the resonator element.

公开(公告)号：US20190181835A1

公开(公告)日：2019-06-13

申请号：US16210812

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Hans-Joerg Timme ,  Ruediger Bauder ,  Andreas Bogner

IPC: H03H9/54 ,  H03H9/48 ,  H03H9/58 ,  H03H9/02 ,  H03H9/17

Abstract: A notch filter includes a first inductor coupled between an input node and an output node, a dual-resonator structure coupled between the input node and the output node, and a second inductor coupled between the dual-resonator structure and ground, and a bandpass filter includes a capacitor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground.

公开(公告)号：US20150318272A1

公开(公告)日：2015-11-05

申请号：US14796682

申请日：2015-07-10

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Guenther Ruhl ,  Hans-Joerg Timme

IPC: H01L27/02 ,  H01L23/367 ,  H01L29/861 ,  H01L23/495 ,  H01L29/78 ,  H01L29/739 ,  H01L23/373 ,  H01L23/427

CPC classification number: H01L27/0251 ,  H01L23/367 ,  H01L23/3738 ,  H01L23/427 ,  H01L23/4275 ,  H01L23/49562 ,  H01L23/525 ,  H01L23/62 ,  H01L24/32 ,  H01L27/24 ,  H01L27/2436 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/41725 ,  H01L29/42376 ,  H01L29/435 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7801 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/861 ,  H01L29/8611 ,  H01L45/128 ,  H01L2224/32245 ,  H01L2924/0002 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/00

Abstract: A semiconductor device includes a transistor having a plurality of transistor cells in a semiconductor body. Each transistor cell includes a control terminal and first and second load terminals. The transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C. The control terminals of the plurality of transistor cells are electrically connected to one another.

Abstract translation: 半导体器件包括在半导体本体中具有多个晶体管单元的晶体管。 每个晶体管单元包括控制端子和第一和第二负载端子。 晶体管还包括相变材料，其在150℃和400℃之间的相变温度Tc下表现出固相变化。多个晶体管单元的控制端子彼此电连接。

公开(公告)号：US20150124420A1

公开(公告)日：2015-05-07

申请号：US14071296

申请日：2013-11-04

Applicant: Infineon Technologies AG

Inventor： Alexander Heinrich ,  Peter Scherl ,  Magdalena Hoier ,  Hans-Joerg Timme

IPC: H05K1/11 ,  H05K3/36 ,  H05K1/14

CPC classification number: H05K1/11 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2224/45015 ,  H01L2224/45028 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45184 ,  H01L2224/4554 ,  H01L2224/48091 ,  H01L2224/48092 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48511 ,  H01L2224/85 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/181 ,  H05K1/111 ,  H05K1/14 ,  H05K3/32 ,  H05K3/36 ,  H05K3/4015 ,  H05K2201/04 ,  H05K2203/0285 ,  Y10T29/49126 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00012 ,  H01L2224/48247 ,  H01L2224/43 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: An electronic device may comprise a semiconductor element and a wire bond connecting the semiconductor element to a substrate. Using a woven bonding wire may improve the mechanical and electrical properties of the wire bond. Furthermore, there may be a cost benefit. Woven bonding wires may be used in any electronic device, for example in power devices or integrated logic devices.

Abstract translation: 电子器件可以包括半导体元件和将半导体元件连接到衬底的引线键合。 使用编织的接合线可以改善引线接合的机械和电学性质。 此外，可能会有成本效益。 编织接合线可用于任何电子设备中，例如功率器件或集成逻辑器件中。

公开(公告)号：US20140291809A1

公开(公告)日：2014-10-02

申请号：US14301995

申请日：2014-06-11

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Frank Pfirsch ,  Hans-Joerg Timme

IPC: H01L29/36 ,  H01L29/32 ,  H01L21/322 ,  H01L21/22 ,  H01L21/265

CPC classification number: H01L29/36 ,  H01L21/22 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/3225 ,  H01L29/32 ,  H03H9/02047 ,  H03H9/175

Abstract: The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes acceptor or donor impurity atoms or crystal defects, whose energy levels are located at least 120 meV from the conduction band edge, as well as from the valence band edge in the bandgap; and wherein the concentration of the impurity atoms or crystal defects is larger than 1×1012 cm−3.

Abstract translation: 半导体衬底包括具有导带边缘和价带边缘的高电阻半导体材料，带隙由带隙分开，其中半导体材料包括受体或施主杂质原子或晶体缺陷，其能级位于至少120meV 导带边缘，以及带隙中的价带边缘; 并且其中杂质原子或晶体缺陷的浓度大于1×10 12 cm -3。

公开(公告)号：US11245381B2

公开(公告)日：2022-02-08

申请号：US16210637

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Stefan Helmut Schmalzl ,  Peter Pfann ,  Ruediger Bauder ,  Hans-Joerg Timme

IPC: H03H9/54 ,  H03H7/01 ,  H03H9/64 ,  H03H9/52 ,  H03H9/05 ,  H03H9/60 ,  H03H9/58 ,  H04B1/00 ,  H03H3/02 ,  H03H11/12 ,  H04B1/10 ,  H04B1/40 ,  H03H9/02 ,  H03H9/17 ,  H03H9/48 ,  H03H9/00 ,  H03H9/66 ,  H04B1/04 ,  H04B1/50 ,  H03H7/12 ,  H03H7/46 ,  H04B1/525 ,  H03F3/19 ,  H03F3/21 ,  H03H9/70 ,  H04B1/18 ,  H03J3/20 ,  H03H9/205 ,  H01L41/187 ,  H03J1/00

Abstract: In accordance with an embodiment, an RF system includes a transmit path having a first tunable transmit band stop filter, and a power amplifier coupled to an output of the first tunable transmit band stop filter, where the first tunable transmit band stop filter is configured reject a receive frequency and pass a transmit frequency; a receive path comprising an LNA; and a duplex filter having a transmit path port coupled to an output of the power amplifier, a receive path port coupled to an input of the LNA, and an antenna port, where the duplex filter is configured to pass the transmit frequency and reject the receive frequency between the antenna port and the transmit path port, pass the receive frequency and reject the transmit frequency between the antenna port and the receive path port.

公开(公告)号：US11057018B2

公开(公告)日：2021-07-06

申请号：US16210812

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Hans-Joerg Timme ,  Ruediger Bauder ,  Andreas Bogner

IPC: H03H9/58 ,  H03H9/05 ,  H03H9/54 ,  H03H7/01 ,  H03H9/64 ,  H03H9/52 ,  H03H9/60 ,  H04B1/00 ,  H03H3/02 ,  H03H11/12 ,  H04B1/10 ,  H04B1/40 ,  H03H9/02 ,  H03H9/17 ,  H03H9/48 ,  H03H9/00 ,  H03H9/66 ,  H04B1/04 ,  H04B1/50 ,  H03H7/12 ,  H03H7/46 ,  H04B1/525 ,  H03F3/19 ,  H03F3/21 ,  H03H9/70 ,  H04B1/18 ,  H03J3/20 ,  H03H9/205 ,  H01L41/187 ,  H03J1/00

Abstract: A notch filter includes a first inductor coupled between an input node and an output node, a dual-resonator structure coupled between the input node and the output node, and a second inductor coupled between the dual-resonator structure and ground, and a bandpass filter includes a capacitor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground.

公开(公告)号：US11012051B2

公开(公告)日：2021-05-18

申请号：US16210670

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Stefan Helmut Schmalzl ,  Peter Pfann ,  Ruediger Bauder ,  Hans-Joerg Timme

IPC: H03H9/58 ,  H03H7/01 ,  H03H9/54 ,  H03H9/64 ,  H03H9/52 ,  H03H9/05 ,  H03H9/60 ,  H04B1/00 ,  H03H3/02 ,  H03H11/12 ,  H04B1/10 ,  H04B1/40 ,  H03H9/02 ,  H03H9/17 ,  H03H9/48 ,  H03H9/00 ,  H03H9/66 ,  H04B1/04 ,  H04B1/50 ,  H03H7/12 ,  H03H7/46 ,  H04B1/525 ,  H03F3/19 ,  H03F3/21 ,  H03H9/70 ,  H04B1/18 ,  H03J3/20 ,  H03H9/205 ,  H01L41/187 ,  H03J1/00

Abstract: In accordance with an embodiment, an RF system includes a transmit path having a transmit RF filter and an adjustable transmit phase shifter/matching network coupled between the transmit RF filter and a transmit antenna port, where the adjustable transmit phase shifter/matching network is configured to transform an impedance of the transmit RF filter at a receive frequency from a first lower impedance to a first higher impedance at the transmit antenna port; and a receive path having a receive RF filter and an adjustable receive phase shifter/matching network coupled between the receive RF filter and a receive antenna port, where the adjustable receive phase shifter/matching network is configured to transform an impedance of the receive RF filter at a transmit frequency from a second lower impedance to a second higher impedance at the receive antenna port.