公开(公告)号：US20220020871A1

公开(公告)日：2022-01-20

申请号：US17309583

申请日：2019-12-05

Applicant: Indian Institute of Science

Inventor： Srinivasan RAGHAVAN ,  Navakanta BHAT ,  Rohith SOMAN

IPC: H01L29/778 ,  H01L29/06

Abstract: The present subject matter provides a High Mobility Electron Transistor (HEMT) comprising: a substrate, a nucleation layer provided on the substrate, a channel layer, and a buffer layer formed between the nucleation layer and the channel layer. The buffer layer comprises a vertical stack of p-n junctions. Each p-n junction of the vertical stack of p-n junctions comprises an n-type layer provided on a p-type layer. The n-type layer and the p-type layer are parallel to the substrate.

公开(公告)号：US20200227543A1

公开(公告)日：2020-07-16

申请号：US16629156

申请日：2018-07-06

Applicant: Indian Institute of Science

Inventor： Rohith SOMAN ,  Ankit SONI ,  Mayank SHRIVASTAVA ,  Srinivasan RAGHAVAN ,  Navakant BHAT

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/423

Abstract: A High Electron Mobility Transistor (HEMT) having a reduced surface field (RESURF) junction is provided. The HEMT includes a source electrode at a first end and a drain electrode at a second end. A gate electrode is provided between the source electrode and the drain electrode. A reduced surface field (RESURF) junction extends from the first end to the second end. The gate electrode is provided above the RESURF junction. A buried channel layer is formed in the RESURF junction on application of a positive voltage at the gate electrode. The RESURF junction includes an n-type Gallium nitride (GaN) layer and a p-type GaN layer. The n-type GaN layer is provided between the p-type GaN layer and the gate electrode.