公开(公告)号：US09627335B2

公开(公告)日：2017-04-18

申请号：US14272535

申请日：2014-05-08

Applicant: Infineon Technologies AG

Inventor： Stephan Henneck ,  Evelyn Napetschnig ,  Daniel Pedone ,  Bernhard Weidgans ,  Simon Faiss ,  Ivan Nikitin

IPC: H01L21/4763 ,  H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L2224/03424 ,  H01L2224/0345 ,  H01L2224/03464 ,  H01L2224/03472 ,  H01L2224/03614 ,  H01L2224/05007 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05558 ,  H01L2224/05583 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01023

Abstract: A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization layer over a semiconductor workpiece; patterning the first metallization layer; and depositing a second metallization layer over the patterned first metallization layer, wherein depositing the second metallization layer includes an electroless deposition process including immersing the patterned first metallization layer in a metal electrolyte.

公开(公告)号：US20160163689A1

公开(公告)日：2016-06-09

申请号：US14959276

申请日：2015-12-04

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Christian Jaeger ,  Joachim Mahler ,  Daniel Pedone ,  Anton Prueckl ,  Hans-Joachim Schulze ,  Andre Schwagmann ,  Patrick Schwarz

IPC: H01L27/02 ,  H01L29/78

CPC classification number: H01L27/0255 ,  H01C7/04 ,  H01L29/7803 ,  H01L29/7805 ,  H01L29/7808 ,  H01L29/7813 ,  H01L45/00

Abstract: A semiconductor device includes a first load terminal electrically coupled to a source zone of a transistor cell. A gate terminal is electrically coupled to a gate electrode which is capacitively coupled to a body zone of the transistor cell. The source and body zones are formed in a semiconductor portion. A thermoresistive element is thermally connected to the semiconductor portion and is electrically coupled between the gate terminal and the first load terminal. Above a maximum operation temperature specified for the semiconductor device, an electric resistance of the thermoresistive element decreases by at least two orders of magnitude within a critical temperature span of at most 50 Kelvin.

Abstract translation: 半导体器件包括电耦合到晶体管单元的源极区的第一负载端子。 栅极端子电耦合到电容耦合到晶体管单元的体区的栅电极。 源区和体区形成在半导体部分中。 热电阻元件热连接到半导体部分，并且电连接在栅极端子和第一负载端子之间。 在对于半导体器件规定的最大工作温度之上，耐温元件的电阻在至多50开尔文的临界温度范围内降低至少两个数量级。

公开(公告)号：US11942383B2

公开(公告)日：2024-03-26

申请号：US17501568

申请日：2021-10-14

Applicant: Infineon Technologies AG

Inventor： Edward Fuergut ,  Chii Shang Hong ,  Teck Sim Lee ,  Ralf Otremba ,  Daniel Pedone ,  Bernd Schmoelzer

IPC: H01L23/16 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/367

CPC classification number: H01L23/16 ,  H01L21/4871 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3672

Abstract: A package for mounting on a mounting base is disclosed. In one example, the package comprises a carrier, an electronic component mounted at the carrier, leads electrically coupled with the electronic component and to be electrically coupled with the mounting base, and a linear spacer for defining a spacing with respect to the carrier.

公开(公告)号：US20220148934A1

公开(公告)日：2022-05-12

申请号：US17501568

申请日：2021-10-14

Applicant: Infineon Technologies AG

Inventor： Edward Fuergut ,  Chii Shang Hong ,  Teck Sim Lee ,  Ralf Otremba ,  Daniel Pedone ,  Bernd Schmoelzer

IPC: H01L23/16 ,  H01L23/367 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

Abstract: A package for mounting on a mounting base is disclosed. In one example, the package comprises a carrier, an electronic component mounted at the carrier, leads electrically coupled with the electronic component and to be electrically coupled with the mounting base, and a linear spacer for defining a spacing with respect to the carrier.

公开(公告)号：US09576944B2

公开(公告)日：2017-02-21

申请号：US14959276

申请日：2015-12-04

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Christian Jaeger ,  Joachim Mahler ,  Daniel Pedone ,  Anton Prueckl ,  Hans-Joachim Schulze ,  Andre Schwagmann ,  Patrick Schwarz

IPC: H01L29/94 ,  H01L27/02 ,  H01L29/78

CPC classification number: H01L27/0255 ,  H01C7/04 ,  H01L29/7803 ,  H01L29/7805 ,  H01L29/7808 ,  H01L29/7813 ,  H01L45/00

Abstract: A semiconductor device includes a first load terminal electrically coupled to a source zone of a transistor cell. A gate terminal is electrically coupled to a gate electrode which is capacitively coupled to a body zone of the transistor cell. The source and body zones are formed in a semiconductor portion. A thermoresistive element is thermally connected to the semiconductor portion and is electrically coupled between the gate terminal and the first load terminal. Above a maximum operation temperature specified for the semiconductor device, an electric resistance of the thermoresistive element decreases by at least two orders of magnitude within a critical temperature span of at most 50 Kelvin.

Abstract translation: 半导体器件包括电耦合到晶体管单元的源极区的第一负载端子。 栅极端子电耦合到电容耦合到晶体管单元的体区的栅电极。 源区和体区形成在半导体部分中。 热电阻元件热连接到半导体部分，并且电连接在栅极端子和第一负载端子之间。 在对于半导体器件规定的最大工作温度之上，耐温元件的电阻在至多50开尔文的临界温度范围内降低至少两个数量级。