公开(公告)号：US20160233849A1

公开(公告)日：2016-08-11

申请号：US14618305

申请日：2015-02-10

Applicant: Infineon Technologies AG

Inventor： Marvin Marbell ,  EJ Hashimoto ,  Bill Agar

IPC: H03H11/28

CPC classification number: H01L23/66 ,  H01L2224/49175 ,  H03F1/565 ,  H03F3/193 ,  H03F2200/534 ,  H03H7/38

Abstract: A packaged RF power transistor includes an RF input lead, a DC gate bias lead, an RF power transistor comprising gate, source and drain terminals, and an input match network. The input match network includes a primary inductor electrically connected to the RF input lead, a secondary inductor electrically connected to the gate terminal and to the DC gate bias lead, and a tuning capacitor electrically connected to the RF input lead and physically disconnected from the gate terminal. The input match network is configured to block DC voltages between the RF input lead and the gate terminal and to propagate AC voltages in a defined frequency range from the RF input lead to the gate terminal. The tuning capacitor is configured to adjust a capacitance of the input match network based upon a variation in DC voltage applied to the RF input lead.

Abstract translation: 封装的RF功率晶体管包括RF输入引线，DC栅极偏置引线，包括栅极，源极和漏极端子的RF功率晶体管以及输入匹配网络。 输入匹配网络包括电连接到RF输入引线的初级电感器，电连接到栅极端子和DC栅极偏置引线的次级电感器，以及电连接到RF输入引线并与栅极物理断开的调谐电容器 终奌站。 输入匹配网络被配置为阻止RF输入引线和栅极端子之间的直流电压，并且将从RF输入引线到栅极端子的规定频率范围内的交流电压传播。 调谐电容器被配置为基于施加到RF输入引线的DC电压的变化来调整输入匹配网络的电容。

公开(公告)号：US20190165753A1

公开(公告)日：2019-05-30

申请号：US15823155

申请日：2017-11-27

Applicant: Infineon Technologies AG

Inventor： Bayaner Arigong ,  Haedong Jang ,  Richard Wilson ,  Frank Trang ,  Qianli Mu ,  EJ Hashimoto

IPC: H03H7/40 ,  H03F3/24 ,  H03F3/193 ,  H03F1/56 ,  H03H11/30 ,  H03F1/02

Abstract: An amplifier circuit includes a first port, a second port, a reference potential port, and an RF amplifier device having a first terminal electrically coupled to the first port, a second terminal electrically coupled to the second port, and a reference potential terminal electrically coupled to the reference potential port. The RF amplifier device amplifies an RF signal across an RF frequency range that includes a fundamental RF frequency. An impedance matching network is electrically coupled to the first terminal and the first port. The impedance matching network includes a baseband termination circuit that presents low impedance in a baseband frequency region, a fundamental frequency matching circuit that presents a complex conjugate of an intrinsic impedance of the RF amplifier device in the RF frequency range, and a second order harmonic termination circuit that presents low impedance at second order harmonics of frequencies in the fundamental RF frequency range.