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    PCB Based Semiconductor Package Having Integrated Electrical Functionality
    1.
    发明申请
    PCB Based Semiconductor Package Having Integrated Electrical Functionality 有权
    具有集成电气功能的基于PCB的半导体封装

    公开(公告)号：US20170034913A1

    公开(公告)日：2017-02-02

    申请号：US14811325

    申请日：2015-07-28

    Applicant: Infineon Technologies AG

    Inventor： Qianli Mu ,  Cristian Gozzi ,  Michael Simcoe ,  Guillaume Bigny

    IPC: H05K1/18 ,  H05K1/11 ,  H05K1/02

    CPC classification number: H05K1/181 ,  H01L23/142 ,  H01L23/64 ,  H01L2224/49175 ,  H05K1/025 ,  H05K1/0298 ,  H05K1/111 ,  H05K1/115 ,  H05K1/144 ,  H05K1/182 ,  H05K3/421 ,  H05K3/429 ,  H05K2201/09236 ,  H05K2201/09327 ,  H05K2201/09336 ,  H05K2201/09481 ,  H05K2201/0959 ,  H05K2201/10166 ,  H05K2203/049

    Abstract: A semiconductor package includes a metal baseplate, a semiconductor die having a reference terminal attached to the baseplate and an RF terminal facing away from the baseplate, and a multilayer circuit board having a first side attached to the baseplate and a second side facing away from the baseplate. The multilayer circuit board includes a plurality of interleaved signal and ground layers. One of the signal layers is at the second side of the multilayer circuit board and electrically connected to the RF terminal of the semiconductor die. One of the ground layers is at the first side of the multilayer circuit board and attached to the metal baseplate. Power distribution structures are formed in the signal layer at the second side of the multilayer circuit board. RF matching structures are formed in a different one of the signal layers than the power distribution structures.

    Abstract translation: 半导体封装包括金属基板，具有附接到基板的参考端子的半导体管芯和远离基板的RF端子，以及多层电路板，其具有附接到基板的第一侧和远离基板的第二侧 底盘。 多层电路板包括多个交错信号和接地层。 信号层中的一个位于多层电路板的第二侧并电连接到半导体管芯的RF端子。 其中一个接地层位于多层电路板的第一侧并附着在金属底板上。 功率分配结构形成在多层电路板的第二侧的信号层中。 RF匹配结构形成在与功率分配结构不同的信号层中。

    RF Power Amplifier with Combined Baseband, Fundamental and Harmonic Tuning Network
    2.
    发明申请
    RF Power Amplifier with Combined Baseband, Fundamental and Harmonic Tuning Network 审中-公开

    公开(公告)号：US20190165753A1

    公开(公告)日：2019-05-30

    申请号：US15823155

    申请日：2017-11-27

    Applicant: Infineon Technologies AG

    Inventor： Bayaner Arigong ,  Haedong Jang ,  Richard Wilson ,  Frank Trang ,  Qianli Mu ,  EJ Hashimoto

    IPC: H03H7/40 ,  H03F3/24 ,  H03F3/193 ,  H03F1/56 ,  H03H11/30 ,  H03F1/02

    Abstract: An amplifier circuit includes a first port, a second port, a reference potential port, and an RF amplifier device having a first terminal electrically coupled to the first port, a second terminal electrically coupled to the second port, and a reference potential terminal electrically coupled to the reference potential port. The RF amplifier device amplifies an RF signal across an RF frequency range that includes a fundamental RF frequency. An impedance matching network is electrically coupled to the first terminal and the first port. The impedance matching network includes a baseband termination circuit that presents low impedance in a baseband frequency region, a fundamental frequency matching circuit that presents a complex conjugate of an intrinsic impedance of the RF amplifier device in the RF frequency range, and a second order harmonic termination circuit that presents low impedance at second order harmonics of frequencies in the fundamental RF frequency range.

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