公开(公告)号：US11367654B2

公开(公告)日：2022-06-21

申请号：US16248255

申请日：2019-01-15

Applicant: Infineon Technologies AG

Inventor： Karl Mayer ,  Evelyn Napetschnig ,  Michael Pinczolits ,  Michael Sternad ,  Michael Roesner

IPC: H01L21/78 ,  H01L23/544 ,  H01L23/48 ,  H01L23/58 ,  H01L23/00 ,  H01L23/31

Abstract: A system and method for manufacturing a packaged component are disclosed. An embodiment comprises forming a plurality of components on a carrier, the plurality of components being separated from each other by kerf regions on a front side of the carrier and forming a metal pattern on a backside of the carrier, wherein the metal pattern covers the backside of the carrier except over regions corresponding to the kerf regions. The method further comprises generating the component by separating the carrier.

公开(公告)号：US10157765B2

公开(公告)日：2018-12-18

申请号：US15359620

申请日：2016-11-23

Applicant: Infineon Technologies AG

Inventor： Gudrun Stranzl ,  Martin Zgaga ,  Rainer Leuschner ,  Bernhard Goller ,  Bernhard Boche ,  Manfred Engelhardt ,  Hermann Wendt ,  Bernd Noehammer ,  Karl Mayer ,  Michael Roesner ,  Monika Cornelia Voerckel

IPC: H01L23/498 ,  H01L21/683 ,  H01L21/283 ,  H01L21/78 ,  H01L21/033 ,  H01L21/285 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/768

Abstract: Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.

公开(公告)号：US09935060B2

公开(公告)日：2018-04-03

申请号：US15430582

申请日：2017-02-13

Applicant: Infineon Technologies AG

Inventor： Srinivasa Reddy Yeduru ,  Karl Heinz Gasser ,  Stefan Woehlert ,  Karl Mayer ,  Francisco Javier Santos Rodriguez

IPC: H01L23/00 ,  H01L21/683 ,  H01L21/288

CPC classification number: H01L23/562 ,  H01L21/288 ,  H01L21/4814 ,  H01L21/6835 ,  H01L23/49838 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/03002 ,  H01L2224/04026 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05687 ,  H01L2224/27002 ,  H01L2224/27005 ,  H01L2224/2732 ,  H01L2224/2747 ,  H01L2224/29011 ,  H01L2224/29014 ,  H01L2224/29021 ,  H01L2224/29023 ,  H01L2224/29035 ,  H01L2224/29036 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29393 ,  H01L2224/32245 ,  H01L2224/94 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01015 ,  H01L2924/04941 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05124 ,  H01L2224/05187 ,  H01L2924/0665 ,  H01L2924/01006 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/0781 ,  H01L2924/07802

Abstract: A method for processing a wafer in accordance with various embodiments may include: removing wafer material from an inner portion of the wafer to form a structure at an edge region of the wafer to at least partially surround the inner portion of the wafer, and printing material into the inner portion of the wafer using the structure as a printing mask. A method for processing a wafer in accordance with various embodiments may include: providing a carrier and a wafer, the wafer having a first side and a second side opposite the first side, the first side of the wafer being attached to the carrier, the second side having a structure at an edge region of the wafer, the structure at least partially surrounding an inner portion of the wafer; and printing material onto at least a portion of the second side of the wafer.

公开(公告)号：US20150280288A1

公开(公告)日：2015-10-01

申请号：US14230071

申请日：2014-03-31

Applicant: Infineon Technologies AG

Inventor： Vijaye Kumar Rajaraman ,  Kamil Karlovsky ,  Thomas Neidhart ,  Karl Mayer ,  Rainer Leuschner ,  Christine Moser ,  Ravi Keshav Joshi ,  Alexander Breymesser ,  Bernhard Goller ,  Francisco Javier Santos Rodriguez ,  Peter Zorn

IPC: H01M10/42 ,  H01M2/08 ,  H01M10/04 ,  H01M2/02

CPC classification number: H01M10/4257 ,  H01M2/0202 ,  H01M2/024 ,  H01M2/0404 ,  H01M2/06 ,  H01M2/08 ,  H01M6/40 ,  H01M10/04 ,  H01M10/0436 ,  H01M10/052 ,  Y10T29/4911

Abstract: A lithium ion battery includes a first substrate having a first main surface, and a lid including an insulating material. The lid is attached to the first main surface of the first substrate, and a cavity is defined between the first substrate and the lid. The lithium ion battery further includes an electrical interconnection element in the lid, the electrical interconnection element providing an electrical connection between a first main surface and a second main surface of the lid. The lithium ion battery further includes an electrolyte in the cavity, an anode at the first substrate, the anode including a component made of a semiconductor material, and a cathode at the lid.

Abstract translation: 锂离子电池包括具有第一主表面的第一基板和包括绝缘材料的盖。 盖子附接到第一基板的第一主表面，并且在第一基板和盖子之间限定空腔。 锂离子电池还包括盖中的电互连元件，电互连元件在盖的第一主表面和第二主表面之间提供电连接。 锂离子电池还包括空腔中的电解质，第一衬底处的阳极，阳极包括由半导体材料制成的部件，以及阴极。

公开(公告)号：US20190148233A1

公开(公告)日：2019-05-16

申请号：US16248255

申请日：2019-01-15

Applicant: Infineon Technologies AG

Inventor： Karl Mayer ,  Evelyn Napetschnig ,  Michael Pinczolits ,  Michael Sternad ,  Michael Roesner

IPC: H01L21/78 ,  H01L23/00

Abstract: A system and method for manufacturing a packaged component are disclosed. An embodiment comprises forming a plurality of components on a carrier, the plurality of components being separated from each other by kerf regions on a front side of the carrier and forming a metal pattern on a backside of the carrier, wherein the metal pattern covers the backside of the carrier except over regions corresponding to the kerf regions. The method further comprises generating the component by separating the carrier.

公开(公告)号：US20170076970A1

公开(公告)日：2017-03-16

申请号：US15359620

申请日：2016-11-23

Applicant: Infineon Technologies AG

Inventor： Gudrun Stranzl ,  Martin Zgaga ,  Rainer Leuschner ,  Bernhard Goller ,  Bernhard Boche ,  Manfred Engelhardt ,  Hermann Wendt ,  Bernd Noehammer ,  Karl Mayer ,  Michael Roesner ,  Monika Cornelia Voerckel

IPC: H01L21/683 ,  H01L21/768 ,  H01L21/78 ,  H01L21/285 ,  H01L21/304 ,  H01L21/033 ,  H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/6835 ,  H01L21/0331 ,  H01L21/283 ,  H01L21/2855 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/6836 ,  H01L21/76895 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/0001

Abstract: Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.

Abstract translation: 用于处理半导体工件的方法可以包括提供包括一个或多个切口区域的半导体工件; 通过从所述工件的第一侧移除来自所述一个或多个切割区域的材料，在所述工件中形成一个或多个沟槽; 将具有第一侧的工件安装到载体上; 从工件的第二侧使工件变薄; 以及在所述工件的第二侧上形成金属化层。

公开(公告)号：US09589880B2

公开(公告)日：2017-03-07

申请号：US14049340

申请日：2013-10-09

Applicant: Infineon Technologies AG

Inventor： Srinivasa Reddy Yeduru ,  Karl Heinz Gasser ,  Stefan Woehlert ,  Karl Mayer ,  Francisco Javier Santos Rodriguez

IPC: H01L21/04 ,  H01L23/498 ,  H01L21/48 ,  H01L21/683 ,  H01L23/00

CPC classification number: H01L23/562 ,  H01L21/288 ,  H01L21/4814 ,  H01L21/6835 ,  H01L23/49838 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/03002 ,  H01L2224/04026 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05687 ,  H01L2224/27002 ,  H01L2224/27005 ,  H01L2224/2732 ,  H01L2224/2747 ,  H01L2224/29011 ,  H01L2224/29014 ,  H01L2224/29021 ,  H01L2224/29023 ,  H01L2224/29035 ,  H01L2224/29036 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29393 ,  H01L2224/32245 ,  H01L2224/94 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01015 ,  H01L2924/04941 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05124 ,  H01L2224/05187 ,  H01L2924/0665 ,  H01L2924/01006 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/0781 ,  H01L2924/07802

Abstract: A method for processing a wafer in accordance with various embodiments may include: removing wafer material from an inner portion of the wafer to form a structure at an edge region of the wafer to at least partially surround the inner portion of the wafer, and printing material into the inner portion of the wafer using the structure as a printing mask. A method for processing a wafer in accordance with various embodiments may include: providing a carrier and a wafer, the wafer having a first side and a second side opposite the first side, the first side of the wafer being attached to the carrier, the second side having a structure at an edge region of the wafer, the structure at least partially surrounding an inner portion of the wafer; and printing material onto at least a portion of the second side of the wafer.

Abstract translation: 根据各种实施例的用于处理晶片的方法可以包括：从晶片的内部部分去除晶片材料以在晶片的边缘区域处形成至少部分地围绕晶片内部的结构，以及印刷材料 使用该结构作为印刷掩模进入晶片的内部。 根据各种实施例的用于处理晶片的方法可以包括：提供载体和晶片，所述晶片具有第一侧和与第一侧相对的第二侧，晶片的第一侧附接到载体，第二 所述结构在所述晶片的边缘区域具有结构，所述结构至少部分地围绕所述晶片的内部; 并将印刷材料印刷在晶片的第二面的至少一部分上。

公开(公告)号：US20150097294A1

公开(公告)日：2015-04-09

申请号：US14049340

申请日：2013-10-09

Applicant: Infineon Technologies AG

Inventor： Srinivasa Reddy Yeduru ,  Karl Heinz Gasser ,  Stefan Woehlert ,  Karl Mayer ,  Francisco Javier Santos Rodriguez

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/562 ,  H01L21/288 ,  H01L21/4814 ,  H01L21/6835 ,  H01L23/49838 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/03002 ,  H01L2224/04026 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05687 ,  H01L2224/27002 ,  H01L2224/27005 ,  H01L2224/2732 ,  H01L2224/2747 ,  H01L2224/29011 ,  H01L2224/29014 ,  H01L2224/29021 ,  H01L2224/29023 ,  H01L2224/29035 ,  H01L2224/29036 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29393 ,  H01L2224/32245 ,  H01L2224/94 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01015 ,  H01L2924/04941 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05124 ,  H01L2224/05187 ,  H01L2924/0665 ,  H01L2924/01006 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/0781 ,  H01L2924/07802

Abstract: A method for processing a wafer in accordance with various embodiments may include: removing wafer material from an inner portion of the wafer to form a structure at an edge region of the wafer to at least partially surround the inner portion of the wafer, and printing material into the inner portion of the wafer using the structure as a printing mask. A method for processing a wafer in accordance with various embodiments may include: providing a carrier and a wafer, the wafer having a first side and a second side opposite the first side, the first side of the wafer being attached to the carrier, the second side having a structure at an edge region of the wafer, the structure at least partially surrounding an inner portion of the wafer; and printing material onto at least a portion of the second side of the wafer.

Abstract translation: 根据各种实施例的用于处理晶片的方法可以包括：从晶片的内部部分去除晶片材料以在晶片的边缘区域处形成至少部分地围绕晶片内部的结构，以及印刷材料 使用该结构作为印刷掩模进入晶片的内部。 根据各种实施例的用于处理晶片的方法可以包括：提供载体和晶片，所述晶片具有第一侧和与第一侧相对的第二侧，晶片的第一侧附接到载体，第二 所述结构在所述晶片的边缘区域具有结构，所述结构至少部分地围绕所述晶片的内部; 并将印刷材料印刷在晶片的第二面的至少一部分上。

公开(公告)号：US20250157857A1

公开(公告)日：2025-05-15

申请号：US19020532

申请日：2025-01-14

Applicant: Infineon Technologies AG

Inventor： Karl Mayer ,  Evelyn Napetschnig ,  Michael Pinczolits ,  Michael Sternad ,  Michael Roesner

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/31

Abstract: In an embodiment a packaged semiconductor device includes a carrier, a component disposed on the carrier, the component having a substrate with a thickness of about 40 μm or less and a metal block, a single titanium layer connecting the component and the metal block, the single titanium layer functioning as a combined metal adhesion layer and a metal barrier layer, a connection layer connecting the carrier and the component, a conductive wire connecting a component contact pad of the component with a carrier contact pad of the carrier and an encapsulant encapsulating the component.

公开(公告)号：US20220246475A1

公开(公告)日：2022-08-04

申请号：US17660150

申请日：2022-04-21

Applicant: Infineon Technologies AG

Inventor： Karl Mayer ,  Evelyn Napetschnig ,  Michael Pinczolits ,  Michael Sternad ,  Michael Roesner

IPC: H01L21/78 ,  H01L23/00

Abstract: A system and method for manufacturing a packaged component are disclosed. An embodiment comprises forming a plurality of components on a carrier, the plurality of components being separated from each other by kerf regions on a front side of the carrier and forming a metal pattern on a backside of the carrier, wherein the metal pattern covers the backside of the carrier except over regions corresponding to the kerf regions. The method further comprises generating the component by separating the carrier.