公开(公告)号：US20240251683A1

公开(公告)日：2024-07-25

申请号：US18419033

申请日：2024-01-22

Applicant: Infineon Technologies AG

Inventor： Mohanraj SOUNDARA PANDIAN ,  Marten OLDSEN

IPC: H10N39/00 ,  B06B1/02 ,  B06B1/06

CPC classification number: H10N39/00 ,  B06B1/0292 ,  B06B1/0666

Abstract: Examples disclose an ultrasonic transducer including a set of transducer elements including a capacitive transducer element and a piezoelectric transducer element, wherein the capacitive transducer element and the piezoelectric transducer element are provided laterally separated in a same semiconductor die. Further examples disclose a method of manufacturing an ultrasonic transducer.

公开(公告)号：US20210373322A1

公开(公告)日：2021-12-02

申请号：US17302938

申请日：2021-05-17

Applicant: Infineon Technologies AG

Inventor： Stephan Gerhard ALBERT ,  Marten OLDSEN

IPC: G02B26/08 ,  B81B3/00 ,  B81C1/00 ,  H01L21/02

Abstract: A method for producing a MEMS device comprises fabricating a first semiconductor layer and selectively depositing a second semiconductor layer over the first semiconductor layer, wherein the second semiconductor layer comprises a first part composed of monocrystalline semiconductor material and a second part composed of polycrystalline semiconductor material. The method furthermore comprises structuring at least one of the semiconductor layers, wherein the monocrystalline semiconductor material of the first part and underlying material of the first semiconductor layer form a spring element of the MEMS device and the polycrystalline semiconductor material of the second part and underlying material of the first semiconductor layer form at least one part of a comb drive of the MEMS device.

公开(公告)号：US20240248071A1

公开(公告)日：2024-07-25

申请号：US18414733

申请日：2024-01-17

Applicant: Infineon Technologies AG

Inventor： Julia Isabel PEREZ BARRAZA ,  Marten OLDSEN ,  Matthias EBERL

IPC: G01N33/00 ,  H01L21/74 ,  H01L21/768 ,  H01L23/00 ,  H01L23/498

CPC classification number: G01N33/005 ,  H01L21/743 ,  H01L21/76871 ,  H01L23/49838 ,  H01L23/49872 ,  H01L24/32 ,  H01L2224/32188

Abstract: Examples disclose a sensor for measuring a gas property, in particular a gas composition, more particularly a hydrogen level, wherein the sensor includes a semiconductor die, wherein the semiconductor die includes a measuring cavity, wherein a measuring sensor element is arranged in the measuring cavity, wherein the semiconductor die includes a contact pad, wherein the semiconductor die includes a buried conductor, wherein the buried conductor electrically connects the measuring sensor element to the contact pad, wherein a conductive bonding layer of the semiconductor die surrounds the measuring cavity for providing a conductive bonding surface, and wherein the buried conductor is insulated from the conductive bonding layer. Further examples, disclose methods for manufacturing a sensor.

公开(公告)号：US20220033249A1

公开(公告)日：2022-02-03

申请号：US17376539

申请日：2021-07-15

Applicant: Infineon Technologies AG

Inventor： Andre BROCKMEIER ,  Barbara Angela GLANZER ,  Marten OLDSEN ,  Francesco SOLAZZI ,  Carsten VON KOBLINSKI

IPC: B81B7/00 ,  B81B3/00 ,  B81C1/00 ,  H04R1/04

Abstract: The semiconductor device includes a microelectromechanical system (MEMS) chip having a first main surface and a second main surface situated opposite the first main surface, a first glass-based substrate, on which the MEMS chip is arranged by its first main surface, and a second substrate, which is arranged on the second main surface of the MEMS chip, wherein the MEMS chip has a first recess connected to the surroundings by way of a plurality of perforation holes arranged in the first substrate.