公开(公告)号：US20170283246A1

公开(公告)日：2017-10-05

申请号：US15478946

申请日：2017-04-04

Applicant: Infineon Technologies AG

Inventor： Klaus ELIAN ,  Franz GABLER ,  Thomas MUELLER ,  Horst THEUSS ,  Mathias VAUPEL

IPC: B81B7/00 ,  B81C1/00

Abstract: A package which comprises a carrier, a transducer mounted on the carrier and configured for converting between a package-external property and an electric signal, a package housing at least partially housing at least one of the carrier and the transducer, and a sealing which forms at least part of the package housing for sealing between the package and a package-external body.

公开(公告)号：US20170117183A1

公开(公告)日：2017-04-27

申请号：US14949691

申请日：2015-11-23

Applicant: Infineon Technologies AG

Inventor： Mathias VAUPEL ,  Kurt GEHRIG ,  Kian Pin QUECK

IPC: H01L21/78 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01L21/78 ,  H01L21/67017 ,  H01L21/67092 ,  H01L21/67098 ,  H01L21/67132 ,  H01L21/6836 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2221/68381 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/10 ,  Y10T156/1121 ,  Y10T156/1126 ,  Y10T156/1137 ,  Y10T156/1153 ,  Y10T156/1911 ,  Y10T156/1922 ,  Y10T156/1939

Abstract: An embodiment method for separating semiconductor devices from a wafer comprises using a carrier which acts an adjustable adhesive force upon the semiconductor devices and removing the semiconductor devices from the carrier by applying a mechanical or acoustical impulse to the carrier.

公开(公告)号：US20130062770A1

公开(公告)日：2013-03-14

申请号：US13671573

申请日：2012-11-08

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim BARTH ,  Mathias VAUPEL ,  Rainer STEINER ,  Werner ROBL ,  Jens POHL ,  Joern PLAGMANN ,  Gottfried BEER

IPC: H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/76807 ,  H01L21/76879 ,  H01L23/49816 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

Abstract: One or more embodiments relate to a semiconductor structure, comprising: a barrier layer overlying a workpiece surface; a seed layer overlying the barrier layer; an inhibitor layer overlying said seed layer, the inhibitor layer having a opening exposing a portion of the seed layer, and a fill layer overlying the exposed portion of the seed layer.

Abstract translation: 一个或多个实施例涉及半导体结构，包括：覆盖工件表面的阻挡层; 覆盖阻挡层的种子层; 覆盖所述种子层的抑制剂层，所述抑制剂层具有暴露所述种子层的一部分的开口以及覆盖所述种子层的暴露部分的填充层。

公开(公告)号：US20210087054A1

公开(公告)日：2021-03-25

申请号：US17116021

申请日：2020-12-09

Applicant: Infineon Technologies AG

Inventor： Mathias VAUPEL ,  Bernhard KNOTT ,  Horst THEUSS

IPC: B81B7/00 ,  H01L23/04 ,  H01L23/24 ,  H01L23/498 ,  H01L23/16 ,  B81C1/00 ,  H01L21/311 ,  H01L21/52 ,  H01L21/56 ,  H01L23/055 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00

Abstract: A method for producing a semiconductor component is proposed. The method includes providing a housing. At least one semiconductor chip is arranged in a cavity of the housing. Furthermore, an electrical contact of the semiconductor chip is connected to an electrical contact of the housing via a bond wire. The method furthermore includes applying a protective material on the electrical contact of the housing and also on a region of the bond wire which is adjacent to the electrical contact of the housing. Moreover, the method also includes filling at least one partial region of the cavity with a gel.

公开(公告)号：US20190106321A1

公开(公告)日：2019-04-11

申请号：US16142826

申请日：2018-09-26

Applicant: Infineon Technologies AG

Inventor： Mathias VAUPEL ,  Bernhard KNOTT ,  Horst THEUSS

IPC: B81B7/00 ,  H01L23/055 ,  H01L23/00 ,  H01L23/495 ,  H01L23/31 ,  B81C1/00 ,  H01L21/52 ,  H01L21/56 ,  H01L21/311

Abstract: A method for producing a semiconductor component is proposed. The method includes providing a housing. At least one semiconductor chip is arranged in a cavity of the housing. Furthermore, an electrical contact of the semiconductor chip is connected to an electrical contact of the housing via a bond wire. The method furthermore includes applying a protective material on the electrical contact of the semiconductor chip and also on a region of the bond wire which is adjacent to the electrical contact of the semiconductor chip, and/or on the electrical contact of the housing and also on a region of the bond wire which is adjacent to the electrical contact of the housing. Moreover, the method also includes filling at least one partial region of the cavity with a gel.

公开(公告)号：US20150059454A1

公开(公告)日：2015-03-05

申请号：US14016046

申请日：2013-08-31

Applicant: Infineon Technologies AG

Inventor： Mathias VAUPEL ,  Horst Theuss ,  Thomas Lehmann

IPC: G01M1/12

CPC classification number: G01M1/122 ,  G01L19/0084 ,  G01L19/0092 ,  G01L19/141 ,  G01L19/143 ,  H01L23/00 ,  H01L23/3185 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49171 ,  H01L2924/1815 ,  Y10T29/49117 ,  H01L2924/00014

Abstract: A sensor arrangement for sensing an environmental property of an environment of the sensor arrangement, the sensor arrangement comprising: a carrier; an active sensor component arranged at the carrier and configured for providing a sensor signal being indicative of the environmental property; a molding structure encapsulating at least a part of an exterior surface of the carrier and comprising an access recess exposing the active sensor component with regard to the environment; wherein the access recess is arranged asymmetrically with regard to the carrier.

Abstract translation: 一种用于感测传感器装置的环境的环境特性的传感器装置，所述传感器装置包括：载体; 布置在所述载体处并被配置用于提供表示所述环境特性的传感器信号的有源传感器部件; 模制结构，其包封载体的外表面的至少一部分并且包括相对于环境暴露主动传感器部件的进入凹部; 其中所述进入凹槽相对于所述载体不对称地布置。

公开(公告)号：US20140367015A1

公开(公告)日：2014-12-18

申请号：US13920541

申请日：2013-06-18

Applicant: Infineon Technologies AG

Inventor： Mathias VAUPEL ,  Kurt GEHRING ,  Kian Pin QUECK

IPC: H01L21/78 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01L21/78 ,  H01L21/67017 ,  H01L21/67092 ,  H01L21/67098 ,  H01L21/67132 ,  H01L21/6836 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2221/68381 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/10 ,  Y10T156/1121 ,  Y10T156/1126 ,  Y10T156/1137 ,  Y10T156/1153 ,  Y10T156/1911 ,  Y10T156/1922 ,  Y10T156/1939

Abstract: An embodiment method for separating semiconductor devices from a wafer comprises using a carrier which acts an adjustable adhesive force upon the semiconductor devices and removing the semiconductor devices from the carrier by applying a mechanical or acoustical impulse to the carrier.

Abstract translation: 用于从晶片分离半导体器件的实施例方法包括使用对半导体器件施加可调节的粘合力的载体，并通过对载体施加机械或声学冲击而从载体上移除半导体器件。

公开(公告)号：US20130309864A1

公开(公告)日：2013-11-21

申请号：US13671583

申请日：2012-11-08

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim BARTH ,  Mathias VAUPEL ,  Rainer STEINER ,  Werner ROBL ,  Jens POHL ,  Joern PLAGMANN ,  Gottfried BEER

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/76807 ,  H01L21/76879 ,  H01L23/49816 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

Abstract: One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a seed layer over the barrier layer; forming an inhibitor layer over the seed layer; removing a portion of said inhibitor layer to expose a portion of the seed layer; and selectively depositing a fill layer on the exposed seed layer.

Abstract translation: 一个或多个实施例涉及一种形成半导体结构的方法，包括：提供工件; 在工件上形成阻挡层; 在阻挡层上形成种子层; 在种子层上形成抑制层; 去除所述抑制剂层的一部分以暴露所述种子层的一部分; 并且在曝光的种子层上选择性地沉积填充层。