公开(公告)号：US09646854B2

公开(公告)日：2017-05-09

申请号：US14229777

申请日：2014-03-28

Applicant: Intel Corporation

Inventor： Yonggang Yong Li ,  Aritra Dhar ,  Dilan Seneviratne ,  Jon M. Williams

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/48 ,  H05K3/10 ,  H05K3/18 ,  C23C18/16 ,  C23C18/20 ,  C23C18/30 ,  H01L23/498 ,  H05K3/00 ,  H05K3/04 ,  C23C18/38

CPC classification number: H01L21/4857 ,  C23C18/1608 ,  C23C18/1612 ,  C23C18/2086 ,  C23C18/30 ,  C23C18/38 ,  H01L21/288 ,  H01L21/486 ,  H01L21/4864 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49866 ,  H01L24/17 ,  H01L2224/16225 ,  H01L2924/15311 ,  H05K3/0032 ,  H05K3/045 ,  H05K3/107 ,  H05K3/185 ,  H05K2201/0236 ,  H05K2203/072 ,  H05K2203/107

Abstract: Embodiments describe the selective electroless plating of dielectric layers. According to an embodiment, a dielectric layer is patterned to form one or more patterned surfaces. A seed layer is then selectively formed along the patterned surfaces of the dielectric layer. An electroless plating process is used to deposit metal only on the patterned surfaces of the dielectric layer. According to an embodiment, the dielectric layer is doped with an activator precursor. Laser assisted local activation is performed on the patterned surfaces of the dielectric layer in order to selectively form a seed layer only on the patterned surfaces of the dielectric layer by reducing the activator precursor to an oxidation state of zero. According to an additional embodiment, a seed layer is selectively formed on the patterned surfaces of the dielectric layer with a colloidal or ionic seeding solution.

公开(公告)号：US10586715B2

公开(公告)日：2020-03-10

申请号：US15588500

申请日：2017-05-05

Applicant: Intel Corporation

Inventor： Yonggang Yong Li ,  Aritra Dhar ,  Dilan Seneviratne ,  Jon M. Williams

IPC: H01L21/288 ,  H01L21/48 ,  H01L23/498 ,  C23C18/16 ,  C23C18/38 ,  C23C18/20 ,  C23C18/30 ,  H05K3/10 ,  H05K3/18 ,  H05K3/00 ,  H05K3/04 ,  H01L23/00

Abstract: Embodiments describe the selective electroless plating of dielectric layers. According to an embodiment, a dielectric layer is patterned to form one or more patterned surfaces. A seed layer is then selectively formed along the patterned surfaces of the dielectric layer. An electroless plating process is used to deposit metal only on the patterned surfaces of the dielectric layer. According to an embodiment, the dielectric layer is doped with an activator precursor. Laser assisted local activation is performed on the patterned surfaces of the dielectric layer in order to selectively form a seed layer only on the patterned surfaces of the dielectric layer by reducing the activator precursor to an oxidation state of zero. According to an additional embodiment, a seed layer is selectively formed on the patterned surfaces of the dielectric layer with a colloidal or ionic seeding solution.