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公开(公告)号:US12271305B2
公开(公告)日:2025-04-08
申请号:US17214818
申请日:2021-03-27
Applicant: Intel Corporation
Inventor: Sai Prashanth Muralidhara , Alaa R. Alameldeen , Rajat Agarwal , Wei P. Chen , Vivek Kozhikkottu
IPC: G06F12/0802 , G06F3/06
Abstract: A two-level main memory in which both volatile memory and persistent memory are exposed to the operating system in a flat manner and data movement and management is performed in cache line granularity is provided. The operating system can allocate pages in the two-level main memory randomly across the first level main memory and the second level main memory in a memory-type agnostic manner, or, in a more intelligent manner by allocating predicted hot pages in first level main memory and predicted cold pages in second level main memory. The cache line granularity movement is performed in a “swap” manner, that is, a hot cache line in the second level main memory is swapped with a cold cache line in first level main memory because data is stored in either first level main memory or second level main memory not in both first level main memory and second level main memory.
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公开(公告)号:US11144466B2
公开(公告)日:2021-10-12
申请号:US16433663
申请日:2019-06-06
Applicant: Intel Corporation
Inventor: Jongwon Lee , Vivek Kozhikkottu , Kuljit S. Bains , Hussein Alameer
IPC: G06F12/0882 , G11C7/10
Abstract: An embodiment of a memory device includes technology for a memory cell array logically organized in two or more banks of at least two rows and two columns per bank, and two or more local caches respectively coupled to the two or more banks of the memory cell array, where each local cache has a size which is an integer multiple of a memory page size of the memory cell array. Other embodiments are disclosed and claimed.
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公开(公告)号:US20190286566A1
公开(公告)日:2019-09-19
申请号:US16433663
申请日:2019-06-06
Applicant: Intel Corporation
Inventor: Jongwon Lee , Vivek Kozhikkottu , Kuljit S. Bains , Hussein Alameer
IPC: G06F12/0882 , G11C7/10
Abstract: An embodiment of a memory device includes technology for a memory cell array logically organized in two or more banks of at least two rows and two columns per bank, and two or more local caches respectively coupled to the two or more banks of the memory cell array, where each local cache has a size which is an integer multiple of a memory page size of the memory cell array. Other embodiments are disclosed and claimed.
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公开(公告)号:US11216386B2
公开(公告)日:2022-01-04
申请号:US16584612
申请日:2019-09-26
Applicant: Intel Corporation
Inventor: Vivek Kozhikkottu , Suresh Chittor , Esha Choukse , Shankar Ganesh Ramasubramanian
Abstract: Techniques for setting a 2-level auto-close timer to access a memory device include examples of setting first and second time values for the 2-level auto-close timer to cause accessed rows to auto-close following a cache line access to a row of a bank of memory devices. For these examples, the cache line access is responsive to a multi-channel address interleaving policy that causes either successive or non-successive cache line accesses to the bank of memory devices.
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公开(公告)号:US10853300B2
公开(公告)日:2020-12-01
申请号:US15475571
申请日:2017-03-31
Applicant: Intel Corporation
Inventor: Vivek Kozhikkottu , Shankar Ganesh Ramasubramanian , Kon-Woo Kwon , Dinesh Somasekhar
Abstract: In accordance with embodiments disclosed herein, there is provided systems and methods for low latency statistical data bus inversion (DBI) for energy reduction. A transmitting component includes a transmitter and a statistical DBI circuit. The statistical DBI circuit is to receive current data to be transmitted on a data bus and is to store previous data transmitted on the data bus. The statistical DBI circuit includes inverting logic to invert bits of the current data before transmission in response to a control signal. The statistical DBI circuit includes adjacent pattern prediction logic to receive a difference vector including a comparison of the previous data and the current data, determine whether the difference vector includes a pattern predicting transmission of the current data with toggle is more efficient than without toggle, and output the control signal in the first state indicating the pattern was detected.
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公开(公告)号:US20170286216A1
公开(公告)日:2017-10-05
申请号:US15089340
申请日:2016-04-01
Applicant: Intel Corporation
Inventor: Vivek Kozhikkottu , Dinesh Somasekhar , Young Moon Kim , Sang Phill Park
CPC classification number: G06F11/1068 , G06F3/0619 , G06F3/064 , G06F3/0679 , G06F11/08 , G11C7/1006 , G11C29/52 , H03M13/09 , H03M13/093 , H03M13/13 , H03M13/2906
Abstract: Technology for an apparatus is described. The apparatus can include a memory controller with circuitry configured to read K bits of M bits of encoded data in memory, D error detection bits, and P Parity bits protecting the M bits of encoded data for performing a read-write-modify (RWM) command operation on the K bits of the M bits encoded data, wherein K, M and D are positive integers and P is a vector of a set of parity bits. The memory controller can determine whether an error is present on the K bits of the M bits of encoded data according to the D error detection bits.
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公开(公告)号:US20230091205A1
公开(公告)日:2023-03-23
申请号:US17479582
申请日:2021-09-20
Applicant: Intel Corporation
Inventor: Adrian Moga , Ugonna Echeruo , Eduard Roytman , Krishnakanth Sistla , Joseph Nuzman , Brinda Ganesh , Meenakshisundaram Chinthamani , Yen-Cheng Liu , Sai Prashanth Muralidhara , Vivek Kozhikkottu , Hanna Alam , Narasimha Sridhar Srirangam
IPC: G06F12/0862 , G06F13/28
Abstract: Methods and apparatus relating to memory side prefetch architecture for improved memory bandwidth are described. In an embodiment, logic circuitry transmits a Direct Memory Controller Prefetch (DMCP) request to cause a prefetch of data from memory. A memory controller receives the DMCP request and issues a plurality of read operations to the memory in response to the DMCP request. Data read from the memory is stored in a storage structure in response to the plurality of read operations. Other embodiments are also disclosed and claimed.
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公开(公告)号:US10936507B2
公开(公告)日:2021-03-02
申请号:US16367592
申请日:2019-03-28
Applicant: Intel Corporation
Inventor: Vivek Kozhikkottu , Esha Choukse , Shankar Ganesh Ramasubramanian , Melin Dadual , Suresh Chittor
IPC: G06F12/10 , G06F12/1009 , G06F16/907 , G06F9/54 , G06F12/0873 , G06F9/4401
Abstract: In one embodiment, an apparatus includes: a page table circuit to receive a virtual address and to generate at least a portion of a physical address therefrom; and a mapping rule table coupled to the page table circuit, the mapping rule table to receive mapping metadata of a page of a system memory and, based on the mapping metadata, output a mapping rule for the page. Other embodiments are described and claimed.
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公开(公告)号:US10860419B2
公开(公告)日:2020-12-08
申请号:US16236151
申请日:2018-12-28
Applicant: Intel Corporation
Inventor: Dinesh Somasekhar , Wei Wu , Shankar Ganesh Ramasubramanian , Vivek Kozhikkottu , Melin Dadual
Abstract: Systems and methods related to data encoders that can perform error detection or correction. The encoders and decoders may minimize the addition of errors due to aliasing in error correction codes by implementing operators associated with reduced aliasing parity generating or reduced aliasing error checking matrices.
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公开(公告)号:US10319461B2
公开(公告)日:2019-06-11
申请号:US15197590
申请日:2016-06-29
Applicant: Intel Corporation
Inventor: Kon-Woo Kwon , Vivek Kozhikkottu , Dinesh Somasekhar
Abstract: Embodiments are generally directed to a low-overhead mechanism to detect address faults in ECC-protected memories. An embodiment of an apparatus includes a memory array; an error correction code (ECC) encoder for the memory array to encode ECC values based on a data value and a respective address value for the data value; and an ECC decoder for the memory array to decode ECC values that are based on data values and respective addresses for the data values; wherein the apparatus is to detect and correct an error in an address value based on an ECC value, address value, and data value stored in the memory.
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