公开(公告)号：US10551704B2

公开(公告)日：2020-02-04

申请号：US15615834

申请日：2017-06-07

Applicant: JOLED INC.

Inventor： Eri Matsuo ,  Tomoatsu Kinoshita ,  Motohiro Toyota ,  Yasunobu Hiromasu

IPC: G02F1/1362 ,  H01L23/00 ,  H01L27/12

Abstract: Provided is an active matrix substrate that includes a substrate, a thin film transistor, an electrode layer, and a second insulating film. The thin film transistor is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes. The oxide semiconductor layer includes a first region as a channel region. The electrode layer is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end. The second insulating film is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer. The oxide semiconductor layer further includes a second region having lower resistance than the first region. The electrode layer is electrically coupled, at the first end, to the second region of the oxide semiconductor layer.

公开(公告)号：US11127762B2

公开(公告)日：2021-09-21

申请号：US16518386

申请日：2019-07-22

Applicant: JOLED INC.

Inventor： Eri Matsuo ,  Yasuhiro Terai

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor film, a semiconductor auxiliary film, a wiring line, a first metal film, and an interlayer insulating film. The semiconductor film includes a channel region and a low-resistance region. The semiconductor film includes indium and oxygen. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film and reduces the electric resistance of the semiconductor film. The wiring line is electrically coupled to the low-resistance region of the semiconductor film. The first metal film covers the wiring line and has a higher standard electrode potential than the indium. The interlayer insulating film covers the semiconductor film with the first metal film interposed therebetween. The interlayer insulating film has a first hole and a second hole. The first hole is provided at a position opposed to the low-resistance region of the semiconductor film. The second hole reaches the first metal film.

公开(公告)号：US10431603B2

公开(公告)日：2019-10-01

申请号：US15863009

申请日：2018-01-05

Applicant: JOLED INC.

Inventor： Hiroshi Hayashi ,  Tokuaki Kuniyoshi ,  Yasuhiro Terai ,  Eri Matsuo ,  Toshiaki Yoshitani ,  Naoki Asano

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/027 ,  H01L21/768 ,  H01L29/66 ,  H01L29/417

Abstract: A semiconductor device includes a substrate, a first wiring line, a semiconductor film, a second wiring line, and an insulating film. The substrate includes first, second, and third regions provided adjacently in this order in a predetermined direction. The first wiring line is provided on the substrate and provided in each of the first, second, and third regions. The semiconductor film has a low-resistance region in at least a portion thereof. The semiconductor film is provided between the first wiring line and the substrate in the first region, and is in contact with the first wiring line in the second region. The second wiring line is provided at a position closer to the substrate than the semiconductor film, and is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region.