公开(公告)号：US09543201B2

公开(公告)日：2017-01-10

申请号：US14836236

申请日：2015-08-26

Applicant: JSR Corporation

Inventor： Kenzou Ookita ,  Isao Aritome ,  Keisuke Kuriyama ,  Taichi Matsumoto ,  Kazuto Watanabe ,  Atsushi Kobayashi ,  Sugirou Shimoda

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/522 ,  H01L23/485 ,  H01L23/498 ,  H01L21/48 ,  H01L21/288 ,  H01L23/48 ,  H01L23/14 ,  H01L23/532

CPC classification number: H01L21/76895 ,  H01L21/288 ,  H01L21/486 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/485 ,  H01L23/49827 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method for forming a three-dimensional interconnection, a contact plug is formed within a through hole provided in a substrate and an upper wire formed on an upper side of the substrate and a lower wire formed on a lower side are electrically connected to one another by the contact plug. A coating film is formed on an upper surface of the substrate and inner surface of the through hole by applying a metal film-forming composition containing at least one salt of and a particle of a metal to the substrate provided with the through hole. A metal film is formed by heating the coating film, and plated by filling up the through hole by depositing a conductor on the metal film by a plating process using the metal film as a seed layer. An excess conductor deposited in the plating is removed by a chemical mechanical polishing process.

Abstract translation: 在形成三维互连的方法中，在设置在基板上的通孔内形成接触插塞，形成在基板的上侧的上线，下侧形成的下线电连接到一个 另一个由接触塞。 通过将具有至少一种金属盐和金属颗粒的金属成膜组合物涂布到设置有通孔的基板上，在基板的上表面和通孔的内表面上形成涂膜。 通过加热涂膜来形成金属膜，并通过使用金属膜作为种子层的电镀工艺在金属膜上沉积导体来填充通孔而进行镀覆。 通过化学机械抛光工艺除去沉积在电镀中的过量导体。

公开(公告)号：US20160064280A1

公开(公告)日：2016-03-03

申请号：US14836236

申请日：2015-08-26

Applicant: JSR Corporation

Inventor： Kenzou OOKITA ,  Isao Aritome ,  Keisuke Kuriyama ,  Taichi Matsumoto ,  Kazuto Watanabe ,  Atsushi Kobayashi ,  Sugirou Shimoda

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/522

CPC classification number: H01L21/76895 ,  H01L21/288 ,  H01L21/486 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/485 ,  H01L23/49827 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method for forming a three-dimensional interconnection, a contact plug is formed within a through hole provided in a substrate and an upper wire formed on an upper side of the substrate and a lower wire formed on a lower side are electrically connected to one another by the contact plug. A coating film is formed on an upper surface of the substrate and inner surface of the through hole by applying a metal film-forming composition containing at least one salt of and a particle of a metal to the substrate provided with the through hole. A metal film is formed by heating the coating film, and plated by filling up the through hole by depositing a conductor on the metal film by a plating process using the metal film as a seed layer. An excess conductor deposited in the plating is removed by a chemical mechanical polishing process.

Abstract translation: 在形成三维互连的方法中，在设置在基板上的通孔内形成接触插塞，形成在基板的上侧的上线，下侧形成的下线电连接到一个 另一个由接触塞。 通过将具有至少一种金属盐和金属颗粒的金属成膜组合物涂布到设置有通孔的基板上，在基板的上表面和通孔的内表面上形成涂膜。 通过加热涂膜来形成金属膜，并通过使用金属膜作为种子层的电镀工艺在金属膜上沉积导体来填充通孔而进行镀覆。 通过化学机械抛光工艺除去沉积在电镀中的过量导体。

公开(公告)号：US20160057866A1

公开(公告)日：2016-02-25

申请号：US14463012

申请日：2014-08-19

Applicant: JSR CORPORATION

Inventor： Sugirou SHIMODA ,  Kenzou Ookita ,  Isao Aritome ,  Kazuto Watanabe ,  Kenrou Tanaka

IPC: H05K3/00 ,  H01L23/48 ,  H01L21/768 ,  H01L27/108 ,  H01L23/532 ,  C08K5/17 ,  H05K1/09 ,  H05K1/02 ,  C09D11/52 ,  C08K5/098 ,  C08K3/22 ,  C08K5/07 ,  H01B13/00 ,  H01L21/288

CPC classification number: C08K5/17 ,  C08K3/22 ,  C08K5/07 ,  C08K5/098 ,  C08K2003/2248 ,  C09D11/037 ,  C09D11/38 ,  C09D11/52 ,  H01L21/288 ,  H01L21/4846 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49883 ,  H01L27/1085 ,  H01L28/60 ,  H01L2924/0002 ,  H05K3/105 ,  H05K3/4076 ,  H05K2201/0195 ,  H05K2201/09509 ,  H05K2201/09545 ,  H01L2924/00

Abstract: An object of the invention is to provide a simple method capable of easily forming a metal film on a surface of a perforated substrate that is adjacent to the hole in the substrate. The metal film forming method includes a step of heating a perforated substrate having a hole while a surface of the substrate adjacent to the hole is in contact with a conductive ink containing a metal salt and a reducing agent.

Abstract translation: 本发明的目的是提供一种能够容易地在与基板中的孔相邻的多孔基板的表面上形成金属膜的简单方法。 金属膜形成方法包括加热具有孔的多孔基材的步骤，同时邻近孔的基板的表面与含有金属盐和还原剂的导电油墨接触。