公开(公告)号：US10392699B2

公开(公告)日：2019-08-27

申请号：US15509662

申请日：2015-09-08

Applicant: JSR CORPORATION

Inventor： Hitoshi Hamaguchi ,  Kenrou Tanaka ,  Kenzou Ookita ,  Keisuke Kuriyama

IPC: C23C16/44 ,  H05K3/00 ,  G03F7/20 ,  B05D3/06 ,  B29C59/16 ,  C08J7/00 ,  G03F7/039 ,  C09D129/10 ,  C09D133/10 ,  C09D133/14 ,  C09D133/16 ,  C23C16/56 ,  H05K3/12 ,  G03F7/004 ,  G03F7/18 ,  G03F7/24

Abstract: The present invention relates to: a method of producing a structure having a recessed pattern; a resin composition; a method of forming an electroconductive film; an electronic circuit; and an electronic device. The method of producing a structure having a recessed pattern includes the following steps (i) and (ii), and the recessed pattern has a film thickness that is thinner by 5% to less than 90% with respect to that of a coating film obtained in the step (i): (i) the step of forming a coating film on a non-flat surface of a structure using a resin composition which includes an acid-dissociable group-containing polymer and an acid generator; and (ii) the step of forming a recess by subjecting a prescribed part of a portion of the coating film to irradiation with radiation.

公开(公告)号：US10032920B2

公开(公告)日：2018-07-24

申请号：US15582823

申请日：2017-05-01

Applicant: JSR Corporation

Inventor： Hitoshi Hamaguchi ,  Kenrou Tanaka ,  Kenzou Ookita ,  Keisuke Kuriyama

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/288

CPC classification number: H01L29/78636 ,  H01L21/28 ,  H01L21/288 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7869

Abstract: The thin film transistor includes a first insulating layer provided on a substrate; a source electrode and a drain electrode that are provided on the first insulating layer; a semiconductor layer provided so as to cover the first insulating layer, the source electrode, and the drain electrode; a second insulating layer provided on the semiconductor layer; and a gate electrode provided on the second insulating layer, in which the first insulating layer is formed of a hydrophilic/hydrophobic material and has a recess portion, and the source electrode and the drain electrode are provided so as to fill the recess portion of the first insulating layer.

公开(公告)号：US20160057866A1

公开(公告)日：2016-02-25

申请号：US14463012

申请日：2014-08-19

Applicant: JSR CORPORATION

Inventor： Sugirou SHIMODA ,  Kenzou Ookita ,  Isao Aritome ,  Kazuto Watanabe ,  Kenrou Tanaka

IPC: H05K3/00 ,  H01L23/48 ,  H01L21/768 ,  H01L27/108 ,  H01L23/532 ,  C08K5/17 ,  H05K1/09 ,  H05K1/02 ,  C09D11/52 ,  C08K5/098 ,  C08K3/22 ,  C08K5/07 ,  H01B13/00 ,  H01L21/288

CPC classification number: C08K5/17 ,  C08K3/22 ,  C08K5/07 ,  C08K5/098 ,  C08K2003/2248 ,  C09D11/037 ,  C09D11/38 ,  C09D11/52 ,  H01L21/288 ,  H01L21/4846 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49883 ,  H01L27/1085 ,  H01L28/60 ,  H01L2924/0002 ,  H05K3/105 ,  H05K3/4076 ,  H05K2201/0195 ,  H05K2201/09509 ,  H05K2201/09545 ,  H01L2924/00

Abstract: An object of the invention is to provide a simple method capable of easily forming a metal film on a surface of a perforated substrate that is adjacent to the hole in the substrate. The metal film forming method includes a step of heating a perforated substrate having a hole while a surface of the substrate adjacent to the hole is in contact with a conductive ink containing a metal salt and a reducing agent.

Abstract translation: 本发明的目的是提供一种能够容易地在与基板中的孔相邻的多孔基板的表面上形成金属膜的简单方法。 金属膜形成方法包括加热具有孔的多孔基材的步骤，同时邻近孔的基板的表面与含有金属盐和还原剂的导电油墨接触。

公开(公告)号：US09980392B2

公开(公告)日：2018-05-22

申请号：US15262404

申请日：2016-09-12

Applicant: JSR CORPORATION

Inventor： Hitoshi Hamaguchi ,  Kenrou Tanaka ,  Kenzou Ookita ,  Keisuke Kuriyama

IPC: G03F7/039 ,  G03F7/36 ,  G03F7/40 ,  H03K3/10 ,  H05K3/12 ,  H05K3/10 ,  G03F7/004 ,  G03F7/027 ,  G03F7/20

CPC classification number: H05K3/107 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/0392 ,  G03F7/36 ,  G03F7/40 ,  G03F7/70 ,  H05K3/105 ,  H05K3/1258

Abstract: A process for producing a substrate having wiring includes steps (i) to (v) described as follows: (i) applying a radiation-sensitive composition on a substrate to form a coating film; (ii) irradiating a prescribed part of the coating film with radiation to allow the coating film to have a radiation-irradiated region and a radiation-unirradiated region; (iii) allowing the coating film obtained in the step (ii) to have a concave region and a convex region; (iv) forming wiring on the concave region; and (v) removing the convex region by an application of radiation or by heating.

公开(公告)号：US09746775B2

公开(公告)日：2017-08-29

申请号：US14888244

申请日：2014-04-15

Applicant: JSR CORPORATION

Inventor： Hitoshi Hamaguchi ,  Kenrou Tanaka ,  Kenzou Ookita ,  Keisuke Kuriyama

IPC: G03F7/039 ,  G03F7/038 ,  G03F7/36 ,  H05K1/02 ,  H05K3/12 ,  G03F7/38 ,  H05K3/10 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  H05K3/28

CPC classification number: G03F7/38 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/16 ,  G03F7/20 ,  G03F7/36 ,  H05K1/0296 ,  H05K3/107 ,  H05K3/1208 ,  H05K3/287 ,  H05K2201/0145 ,  H05K2201/0154 ,  H05K2201/0166

Abstract: Provided is a method for manufacturing a substrate having a concave pattern to be used for forming a high-definition pattern while suppressing wet-spreading and bleeding of a film-forming ink, provided is a composition to be used for manufacturing the substrate, and provided are a method for forming a conductive film, an electronic circuit, and an electronic device.The method for manufacturing a substrate having a concave pattern includes: (i) a step of applying, on a substrate 1, a composition containing a polymer having an acid-dissociable group and an acid generator to form a coating film 2 and (ii) a step of irradiating a predetermined portion of the coating film 2 with radiation. The method for forming a conductive film includes applying a conductive film-forming ink on the concave pattern formed in the exposed portion of the coating film 2 and heating the ink to form a pattern 6. The electronic circuit and the electronic device are provided by using the method for forming a conductive film.