公开(公告)号：US09076925B2

公开(公告)日：2015-07-07

申请号：US14355598

申请日：2013-05-15

Applicant: Japan Science and Technology Agency

Inventor： Yoshiaki Nakamura ,  Masayuki Isogawa ,  Tomohiro Ueda ,  Jun Kikkawa ,  Akira Sakai ,  Hideo Hosono

IPC: H01L35/16 ,  H01L35/22 ,  H01L35/26 ,  H01L35/12 ,  H01L35/00 ,  H01L35/14 ,  H01L35/32 ,  H01L35/34

CPC classification number: H01L35/22 ,  H01L35/00 ,  H01L35/12 ,  H01L35/14 ,  H01L35/26 ,  H01L35/32 ,  H01L35/34

Abstract: A thermoelectric material includes a semiconductor substrate, a semiconductor oxide film formed on the substrate, and a thermoelectric layer provided on the oxide film. The semiconductor oxide film has a first nano-opening formed therein. The thermoelectric layer has such a configuration that semiconductor nanodots are piled up on or above the first nano-opening so as to form a particle packed structure. At least some of the nanodots each have a second nano-opening formed in its surface, and are connected to each other through the second nano-opening with their crystal orientation aligned. The thermoelectric material is produced through steps of oxidizing the substrate to form the semiconductor oxide film thereon, forming the first nano-opening in the oxide film, and epitaxially growing to pile up the plurality of nanodots on the first nano-opening.As a result, it is possible to provide the thermoelectric material superior in thermoelectric conversion performance.

Abstract translation: 热电材料包括半导体衬底，形成在衬底上的半导体氧化膜和设置在氧化物膜上的热电层。 半导体氧化膜具有形成在其中的第一纳米开口。 热电层具有将半导体纳米点堆积在第一纳米开口上或上方的构造，以形成粒子堆积结构。 至少一些纳米点各自具有在其表面中形成的第二纳米开口，并且通过其晶体取向对准通过第二纳米开口彼此连接。 通过氧化衬底以在其上形成半导体氧化膜的步骤，在氧化膜中形成第一纳米开口并外延生长以在第一纳米开口上堆叠多个纳米点来制造热电材料。 结果，可以提供热电转换性能优异的热电材料。

公开(公告)号：US20140299172A1

公开(公告)日：2014-10-09

申请号：US14355598

申请日：2013-05-15

Applicant: Japan Science and Technology Agency

Inventor： Yoshiaki Nakamura ,  Masayuki Isogawa ,  Tomohiro Ueda ,  Jun Kikkawa ,  Akira Sakai ,  Hideo Hosono

IPC: H01L35/22 ,  H01L35/34

CPC classification number: H01L35/22 ,  H01L35/00 ,  H01L35/12 ,  H01L35/14 ,  H01L35/26 ,  H01L35/32 ,  H01L35/34

Abstract: A thermoelectric material includes a semiconductor substrate, a semiconductor oxide film formed on the substrate, and a thermoelectric layer provided on the oxide film. The semiconductor oxide film has a first nano-opening formed therein. The thermoelectric layer has such a configuration that semiconductor nanodots are piled up on or above the first nano-opening so as to form a particle packed structure. At least some of the nanodots each have a second nano-opening formed in its surface, and are connected to each other through the second nano-opening with their crystal orientation aligned. The thermoelectric material is produced through steps of oxidizing the substrate to form the semiconductor oxide film thereon, forming the first nano-opening in the oxide film, and epitaxially growing to pile up the plurality of nanodots on the first nano-opening.As a result, it is possible to provide the thermoelectric material superior in thermoelectric conversion performance.

Abstract translation: 热电材料包括半导体衬底，形成在衬底上的半导体氧化膜和设置在氧化物膜上的热电层。 半导体氧化膜具有形成在其中的第一纳米开口。 热电层具有将半导体纳米点堆积在第一纳米开口上或上方的构造，以形成粒子堆积结构。 至少一些纳米点各自具有在其表面中形成的第二纳米开口，并且通过其晶体取向对准通过第二纳米开口彼此连接。 通过氧化衬底以在其上形成半导体氧化膜的步骤，在氧化膜中形成第一纳米开口并外延生长以在第一纳米开口上堆叠多个纳米点来制造热电材料。 结果，可以提供热电转换性能优异的热电材料。