Abstract:
A Q-modulated semiconductor laser comprises an optical gain section and an electro-absorptive modulator section, separated by a vertically etched air gap acting as a partially reflecting mirror. The modulator section is placed inside an anti-resonant Fabry-Perot cavity and acts as the rear reflector of the laser. The change of the absorption coefficient in the modulator section results in a change in the Q-factor of the laser, and consequently the lasing threshold and output power. Different embodiments are disclosed, which involve a distributed feedback (DFB) laser, a Fabry-Perot laser, a distributed Bragg reflector (DBR) laser, or a wavelength switchable multi-cavity laser. The integrated Q-modulated laser has advantages of high speed, high extinction ratio, low wavelength chirp and low cost.
Abstract:
A dynamic gain equalizer using amplification instead of attenuation is disclosed. The device relies on integrated semiconductor optical amplifiers in line with a demultiplexer on a single integrated substrate for performing equalization of signals within each of a plurality of channels.
Abstract:
A grating based optical wavelength demultiplexer that can be used for multiple wavelength bands over a wide wavelength range is presented. The spectral response of the device is cyclic. The free spectral range of the grating is designed to be large enough to contain all the wavelength channels to be demultiplexed within a band but small compared to the overall wavelength window of the network application so that a multiplexed signal within any one of the wavelength bands within the application window can be demultiplexed by the same device. This device, being bidirectional will also operate as a multiplexer. By using such a cyclic design, an organization will not need to stock different parts for each band and thus significantly reduce the inventory cost.
Abstract:
A Q-modulated semiconductor laser comprises an optical gain section and an electro-absorptive modulator section, separated by a vertically etched air gap acting as a partially reflecting mirror. The modulator section is placed inside an anti-resonant Fabry-Perot cavity and acts as the rear reflector of the laser. The change of the absorption coefficient in the modulator section results in a change in the Q-factor of the laser, and consequently the lasing threshold and output power. Different embodiments are disclosed, which involve a distributed feedback (DFB) laser, a Fabry-Perot laser, a distributed Bragg reflector (DBR) laser, or a wavelength switchable multi-cavity laser. The integrated Q-modulated laser has advantages of high speed, high extinction ratio, low wavelength chirp and low cost.
Abstract:
A semiconductor laser comprises two optical cavities, each comprising an optical waveguide bounded by two partially reflecting elements. The two optical waveguides are disposed on a substrate to form a substantially V-shaped geometry with substantially no cross-coupling at the open end and a predetermined cross-coupling at the closed end for achieving an optimal single-mode selectivity of the laser. The first cavity has a length such that its resonant wavelengths correspond to a set of discrete operating channels. The second cavity has a slightly different length so that only one resonant wavelength coincides with one of the resonant wavelengths of the first cavity over the operating spectral window. The lasing action occurs at the common resonant wavelength. In operation, at least a portion of the optical waveguide in each of the first and the second cavities are forward biased to provide substantially equal round-trip optical gains. The second cavity is tuned by varying the effective refractive index of a portion of the waveguide through an electrical means, resulting in wavelength switching among the set of discrete operating wavelengths as determined by the first cavity.
Abstract:
A grating based optical de-interleaver useful over a wide wavelength range is presented. An echelle grating is used as dispersive element. The spectral response of the device is cyclic. The free spectral range of the grating is designed to separate wavelength channels to be de-interleaved. This device, being bi-directional will also operate as an interleaver.
Abstract:
A homogeneous semiconductor waveguide structure having an undoped core layer and doped cladding layers on both sides of the core layer is proposed wherein the waveguide core is substantially thick providing polarization independence. Because of the cladding layers having low refractive index contrast with respect to the core and being on opposing sides resulting in a substantially symmetrical structure, the waveguide, can be made single-mode with low polarization sensitivity, thus improving characteristics for conducting light therein. Furthermore, the enlarged mode size increases coupling efficiency. Also, since the waveguide is grown from a single semiconductor composition lattice matched to the substrate, wafer uniformity and reproducibility are enhanced. The three layer structure reduces birefringence sufficiently that a yield enhancing etch stop layer can be added to the structure without substantially adverse effects.
Abstract:
A device for compensating the birefringence normally associated with an integrated optical waveguide grating device has a polarization compensating slab waveguide region. This compensating region can be provided within the slab waveguide region normally present in the grating device by etching, doping, ion implanting a sub-region of a predetermined shape and dimension to change its birefringence. Alternatively, or in combination with changing the birefringence in this sub-region, electrodes can be provided for electro-optically changing the birefringence dynamically as required. This device can be applied to reflective and transmissive diffraction gratings and to phased array waveguide gratings.
Abstract:
A semiconductor laser comprises two optical cavities, each comprising an optical waveguide bounded by two partially reflecting elements. The two optical waveguides are disposed on a substrate to form a substantially V-shaped geometry with substantially no cross-coupling at the open end and a predetermined cross-coupling at the closed end for achieving an optimal single-mode selectivity of the laser. The first cavity has a length such that its resonant wavelengths correspond to a set of discrete operating channels. The second cavity has a slightly different length so that only one resonant wavelength coincides with one of the resonant wavelengths of the first cavity over the operating spectral window. The lasing action occurs at the common resonant wavelength. In operation, at least a portion of the optical waveguide in each of the first and the second cavities are forward biased to provide substantially equal round-trip optical gains. The second cavity is tuned by varying the effective refractive index of a portion of the waveguide through an electrical means, resulting in wavelength switching among the set of discrete operating wavelengths as determined by the first cavity.
Abstract:
A monolithically integrated wavelength switchable laser comprises three coupled Fabry-Perot cavities. The length and consequently the free spectral range of the first cavity are designed such that the resonant peaks correspond substantially to a set of discrete operating wavelengths separated by a constant channel spacing. The second cavity has a slightly different length so that only one resonant peak coincides with one of the resonant peaks of the first cavity over the spectral window of the material gain. The lasing action occurs at the common resonant wavelength. The two cavities are coupled through a third short cavity that produces a certain coupling loss and phase relationship between the first and the second cavities in order to achieve an optimal mode selectivity of the combined cavity laser. In operation, both the first and the second cavities are forward biased to provide optical gains for the laser action. The second cavity is tuned by varying the refractive index of at least a portion of the waveguide within the cavity through an electrical means, resulting in wavelength switching of the laser among the set of discrete operating wavelengths as determined by the first cavity.