Abstract:
A semiconductor laser comprises two optical cavities, each comprising an optical waveguide bounded by two partially reflecting elements. The two optical waveguides are disposed on a substrate to form a substantially V-shaped geometry with substantially no cross-coupling at the open end and a predetermined cross-coupling at the closed end for achieving an optimal single-mode selectivity of the laser. The first cavity has a length such that its resonant wavelengths correspond to a set of discrete operating channels. The second cavity has a slightly different length so that only one resonant wavelength coincides with one of the resonant wavelengths of the first cavity over the operating spectral window. The lasing action occurs at the common resonant wavelength. In operation, at least a portion of the optical waveguide in each of the first and the second cavities are forward biased to provide substantially equal round-trip optical gains. The second cavity is tuned by varying the effective refractive index of a portion of the waveguide through an electrical means, resulting in wavelength switching among the set of discrete operating wavelengths as determined by the first cavity.
Abstract:
A monolithically integrated wavelength switchable laser comprises three coupled Fabry-Perot cavities. The length and consequently the free spectral range of the first cavity are designed such that the resonant peaks correspond substantially to a set of discrete operating wavelengths separated by a constant channel spacing. The second cavity has a slightly different length so that only one resonant peak coincides with one of the resonant peaks of the first cavity over the spectral window of the material gain. The lasing action occurs at the common resonant wavelength. The two cavities are coupled through a third short cavity that produces a certain coupling loss and phase relationship between the first and the second cavities in order to achieve an optimal mode selectivity of the combined cavity laser. In operation, both the first and the second cavities are forward biased to provide optical gains for the laser action. The second cavity is tuned by varying the refractive index of at least a portion of the waveguide within the cavity through an electrical means, resulting in wavelength switching of the laser among the set of discrete operating wavelengths as determined by the first cavity.
Abstract:
A monolithically integrated dual-wavelength laser comprises at least three coupled Fabry-Perot cavities in tandem, each separated by a vertically etched air gap of a size that is substantially equal to an odd-integer multiple of quarter-wavelength. The first two cavities are of substantially comparable lengths and are actively pumped to provide gains to the combined cavity laser, and to produce a series of double-peaked lasing modes. The other cavity has a substantially smaller length and acts as an optical filter to select one of the doublets of the combined cavity as the lasing modes. The beating between the two modes of the dual-wavelength laser at a photodetector produces a microwave carrier signal whose frequency can be tuned by adjusting the balance of the injected currents between the two active cavities.
Abstract:
A bidirectional multiplexer and demultiplexer based on a single waveguide grating is presented. In one embodiment of the invention, the device contains a multi/demultiplexer having an echelle grating disposed between a plurality of input channels and a plurality of output channel arrays. The input and output channels are assigned in a particular order, such that the multiplex and demultiplex functions have the same wavelength channels and such that the blaze angle of the grating facets are optimized simultaneously for both the multiplex and demultiplex function. Because the optical signals are multiplexed and demultiplexed by the same dispersive element, problems of mismatching performance introduced by using different optical components are obviated. The input/output waveguides of the dual-function device can be coupled to a single fiber array, thus reducing the packaging cost.
Abstract:
A waveguide optical monitor is disclosed. The device has an optical input port coupled through a switch to a plurality of input waveguides. A dispersive element disperses light within the input optical waveguides toward a plurality of output waveguides. There are a plurality of photodetectors each optically coupled to an output waveguide. The photodectors are for sensing an intensity of light within the waveguide with which it is optically coupled. An optical switch in optical communication with the optical input port and for switching light received at the optical input port to one of the plurality of input waveguides. Also, an angular dispersive element is present for receiving light from any one of the waveguides and for dispersing the light toward a plurality of output waveguides in dependence upon the input waveguide position and a wavelength of the light such that light directed from the first of the plurality of input waveguides toward the plurality of output waveguides has a first centre wavelength within each of the output waveguides and light directed from the second of the plurality of input waveguides toward the plurality of output waveguides has a second different centre wavelength within each of the output waveguides, the second different centre wavelength different form any first centre wavelength.
Abstract:
In a digital optical switch, an input waveguide and two output waveguides form a Y-shaped splitter or switch. Electrodes are positioned on each output waveguide at the junction with the input waveguide. The electrodes extend as narrow strips across the waveguides. The inner edges of the electrodes are curved to form a smooth continuation profile to the signal paths to reduce losses.
Abstract:
A Q-modulated semiconductor laser comprises an optical gain section and an electro-absorptive modulator section, separated by a vertically etched air gap acting as a partially reflecting mirror. The modulator section is placed inside an anti-resonant Fabry-Perot cavity and acts as the rear reflector of the laser. The change of the absorption coefficient in the modulator section results in a change in the Q-factor of the laser, and consequently the lasing threshold and output power. Different embodiments are disclosed, which involve a distributed feedback (DFB) laser, a Fabry-Perot laser, a distributed Bragg reflector (DBR) laser, or a wavelength switchable multi-cavity laser. The integrated Q-modulated laser has advantages of high speed, high extinction ratio, low wavelength chirp and low cost.
Abstract:
A semiconductor laser comprises two optical cavities, each comprising an optical waveguide bounded by two partially reflecting elements. The two optical waveguides are disposed on a substrate to form a substantially V-shaped geometry with substantially no cross-coupling at the open end and a predetermined cross-coupling at the closed end for achieving an optimal single-mode selectivity of the laser. The first cavity has a length such that its resonant wavelengths correspond to a set of discrete operating channels. The second cavity has a slightly different length so that only one resonant wavelength coincides with one of the resonant wavelengths of the first cavity over the operating spectral window. The lasing action occurs at the common resonant wavelength. In operation, at least a portion of the optical waveguide in each of the first and the second cavities are forward biased to provide substantially equal round-trip optical gains. The second cavity is tuned by varying the effective refractive index of a portion of the waveguide through an electrical means, resulting in wavelength switching among the set of discrete operating wavelengths as determined by the first cavity.
Abstract:
A grating based optical de-interleaver useful over a wide wavelength range is presented. An echelle grating is used as dispersive element. The spectral response of the device is cyclic. The free spectral range of the grating is designed to separate wavelength channels to be de-interleaved. This device, being bi-directional will also operate as an interleaver.
Abstract:
A homogeneous semiconductor waveguide structure having an undoped core layer and doped cladding layers on both sides of the core layer is proposed wherein the waveguide core is substantially thick providing polarization independence. Because of the cladding layers having low refractive index contrast with respect to the core and being on opposing sides resulting in a substantially symmetrical structure, the waveguide, can be made single-mode with low polarization sensitivity, thus improving characteristics for conducting light therein. Furthermore, the enlarged mode size increases coupling efficiency. Also, since the waveguide is grown from a single semiconductor composition lattice matched to the substrate, wafer uniformity and reproducibility are enhanced. The three layer structure reduces birefringence sufficiently that a yield enhancing etch stop layer can be added to the structure without substantially adverse effects.