Growth hormone variations in humans and their uses
    1.
    发明申请
    Growth hormone variations in humans and their uses 审中-公开
    人类生长激素的变化及其用途

    公开(公告)号:US20050233417A1

    公开(公告)日:2005-10-20

    申请号:US10495235

    申请日:2002-11-12

    CPC classification number: C07K14/61 C12Q1/6883 C12Q2600/156

    Abstract: The present invention relates to naturally-occurring growth hormone mutations; to a method for detecting them and their use in screening patients for growth hormone irregularities or for producing variant proteins suitable for treating such irregularities. In one aspect there is disclosed variants of GH1, selected from the group consisting of: (a) (i) +480 C→T; (ii) +446 C→T; (iii) +1491 C→G; (iv) −60 G→A; (v) −40 to −39 GG→CT; (vi) −360 A→G; and (vii) +748 A→G (where figures relate to GH1 nucleotide position number, counting from TSS); (b) a sequence substantially homologous to or that hybridises to sequence (a) under stringent conditions; (c) a sequence substantially homologous to or that hybridises to the sequences (a) or (b) but for degeneracy of the genetic code; and (d) an oligonucleotide specific for any of the sequences (a), (b) or (c) above.

    Abstract translation: 本发明涉及天然存在的生长激素突变; 检测它们的方法及其在筛选患者生长激素不规则或用于产生适于治疗这种不规则的变体蛋白质的用途。 一方面,公开了GH1的变体,其选自:(a)(i)+480C-> T; (ii)+446 C-> T; (iii)+1491 C-> G; (iv)-60 G-> A; (v)-40至-39 GG-> CT; (vi)-360 A-> G; 和(vii)+748 A-> G(其中数字涉及GH1核苷酸位置号,从TSS计数); (b)在严格条件下与序列(a)基本同源或杂交的序列; (c)与序列(a)或(b)基本上同源或杂交的序列,但是遗传密码的简并性; 和(d)对上述(a),(b)或(c)中任一项的特异性寡核苷酸。

    Method of forming an opening or cavity in a substrate for receiving an electronic component
    2.
    发明授权
    Method of forming an opening or cavity in a substrate for receiving an electronic component 失效
    在用于接收电子部件的基板中形成开口或空腔的方法

    公开(公告)号:US07288739B2

    公开(公告)日:2007-10-30

    申请号:US11070558

    申请日:2005-03-02

    Applicant: John Gregory

    Inventor: John Gregory

    Abstract: A method of forming an opening or cavity in a substrate, for receiving an electronic component, consists of or includes providing a patterned opaque masking layer on or adjacent a first major surface of the substrate, the masking layer having an opening overlying the position where the cavity is to be made, removing material from the substrate by laser ablation through the opening thereby forming an opening or cavity of a suitable size for receiving said electronic component.

    Abstract translation: 在衬底中形成用于接收电子部件的开口或空腔的方法由或包括在衬底的第一主表面上或附近提供图案化的不透明掩模层,所述掩模层具有覆盖所述衬底的位置的开口, 通过激光烧蚀通过开口从衬底去除材料,从而形成用于接收所述电子部件的合适尺寸的开口或空腔。

    Magnetic motion device
    3.
    发明授权
    Magnetic motion device 失效
    磁性运动装置

    公开(公告)号:US07026900B1

    公开(公告)日:2006-04-11

    申请号:US11232669

    申请日:2005-09-22

    CPC classification number: H02K99/20 H01F7/14

    Abstract: A magnetic motion device is disclosed, wherein a permanent magnet slides back and forth along a pivoting rail due to the interaction between the slide's magnetic field, the magnetic fields produced by a permanent/electromagnet combination at each end of the rail, and gravitational force. The ends of the rail thereby move up and down in a reciprocating, “see-saw” fashion. Power-take-off mechanisms can be connected in any suitable manner to the device, so that the motion of the rail can power an external device such as a pump.

    Abstract translation: 公开了一种磁性运动装置,其中永磁体由于滑块的磁场,由轨道两端的永久/电磁体组合产生的磁场和重力之间的相互作用,沿着枢转轨道而前后滑动。 轨道的端部由此以往复式“看见”的方式上下移动。 动力输出机构可以以任何合适的方式连接到设备,使得轨道的运动可以为诸如泵的外部设备供电。

    Method of forming an opening or cavity in a substrate for receiving an electronic component
    4.
    发明授权
    Method of forming an opening or cavity in a substrate for receiving an electronic component 失效
    在用于接收电子部件的基板中形成开口或空腔的方法

    公开(公告)号:US06956182B2

    公开(公告)日:2005-10-18

    申请号:US10204154

    申请日:2001-02-02

    Applicant: John Gregory

    Inventor: John Gregory

    Abstract: A method of forming an opening or cavity in a substrate, for receiving an electronic component, consists of or includes providing a patterned opaque masking layer on or adjacent a first major surface of the substrate, the masking layer having an opening overlying the position where the cavity is to be made, removing material from the substrate by laser ablation through the opening thereby forming an opening or cavity of a suitable size for receiving said electronic component.

    Abstract translation: 在衬底中形成用于接收电子部件的开口或空腔的方法由或包括在衬底的第一主表面上或附近提供图案化的不透明掩模层,所述掩模层具有覆盖所述衬底的位置的开口, 通过激光烧蚀通过开口从衬底去除材料,从而形成用于接收所述电子部件的合适尺寸的开口或空腔。

    Metal-insulator-metal capacitor formed by damascene processes between metal interconnect layers and method of forming same
    6.
    发明授权
    Metal-insulator-metal capacitor formed by damascene processes between metal interconnect layers and method of forming same 有权
    金属绝缘体金属电容器通过金属互连层之间的镶嵌工艺形成,以及形成金属互连层的方法

    公开(公告)号:US06891219B2

    公开(公告)日:2005-05-10

    申请号:US10306011

    申请日:2002-11-26

    CPC classification number: H01L28/55 H01L21/76838

    Abstract: Within metal interconnect layers above a substrate of an integrated circuit, a vertical metal-insulator-metal (VMIM) capacitor is formed by the same damascene metallization types of processes that formed the metal interconnect layers. The metal interconnect layers have horizontal metal conductor lines, are vertically separated from other metal interconnect layers by an interlayer dielectric (ILD) layer, and electrically connect to the other metal interconnect layers through via connections extending through the ILD layer. One vertical capacitor plate of the VMIM capacitor is defined by a metal conductor line and a via connection. The other vertical capacitor plate is defined by a metal region adjacent to the metal conductor line and the via connection. The metal conductor line, the via connection and the metal region are formed by the damascene metallization processes.

    Abstract translation: 在集成电路的衬底之上的金属互连层内,通过形成金属互连层的相同的镶嵌金属化类型的工艺形成垂直金属 - 绝缘体金属(VMIM)电容器。 金属互连层具有水平金属导体线,通过层间电介质(ILD)层与其它金属互连层垂直分离,并且通过穿过ILD层的通孔连接电连接到其它金属互连层。 VMIM电容器的一个垂直电容器板由金属导体线和通孔连接限定。 另一个垂直电容器板由与金属导体线和通孔连接相邻的金属区域限定。 金属导体线,通孔连接和金属区域通过镶嵌金属化工艺形成。

    Guitar comfort cushion apparatus
    7.
    发明申请
    Guitar comfort cushion apparatus 审中-公开
    吉他舒适缓冲装置

    公开(公告)号:US20070044633A1

    公开(公告)日:2007-03-01

    申请号:US11501278

    申请日:2006-08-09

    Applicant: John Gregory

    Inventor: John Gregory

    CPC classification number: G10G5/005 G10D1/08

    Abstract: A comfort cushion apparatus is provided for a guitar which has a notch in the guitar body. The apparatus includes a cushion support attached to the notch and fills up the notch in the guitar body. A cushion is attached to the cushion support. The notch is present in the guitar body so that the comfort cushion apparatus serves as an armrest when fitted into the notch. The armrest can make guitar playing more comfortable and more accessible for children who are in between junior and full size guitars. In accordance with another aspect of the invention, a method is provided for making a guitar which has a comfort cushion, the method includes the steps of: obtaining a guitar; cutting a notch out the guitar body; fixing a comfort cushion support in the notch; and attaching a cushion to the cushion support.

    Abstract translation: 为吉他设置了舒适缓冲装置,该吉他在吉他体中具有凹口。 该装置包括附接到凹口的衬垫支撑件,并填充吉他体中的凹口。 缓冲垫附着在衬垫支架上。 吉他体中存在凹口,使得舒适缓冲装置在装配到凹口中时用作扶手。 扶手可以使吉他演奏更舒适,更容易接触到处于初级和全尺寸吉他之间的儿童。 根据本发明的另一方面,提供一种用于制造具有舒适坐垫的吉他的方法,所述方法包括以下步骤:获得吉他; 从吉他身上切出一个缺口; 在凹口中固定舒适缓冲支撑件; 以及将垫子附接到所述衬垫支撑件。

    Metal-insulator-metal capacitor formed by damascene processes between metal interconnect layers and method of forming same

    公开(公告)号:US06524926B1

    公开(公告)日:2003-02-25

    申请号:US09723434

    申请日:2000-11-27

    CPC classification number: H01L28/55 H01L21/76838

    Abstract: Within metal interconnect layers above a substrate of an integrated circuit, a vertical metal-insulator-metal (VMIM) capacitor is formed by the same damascene metallization types of processes that formed the metal interconnect layers. The metal interconnect layers have horizontal metal conductor lines, are vertically separated from other metal interconnect layers by an interlayer dielectric (ILD) layer, and electrically connect to the other metal interconnect layers through via connections extending through the ILD layer. One vertical capacitor plate of the VMIM capacitor is defined by a metal conductor line and a via connection. The other vertical capacitor plate is defined by a metal region adjacent to the metal conductor line and the via connection. The metal conductor line, the via connection and the metal region are formed by the damascene metallization processes.

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