公开(公告)号：US20210359276A1

公开(公告)日：2021-11-18

申请号：US17193769

申请日：2019-09-05

Applicant: KANEKA CORPORATION

Inventor： Hirofumi Inari ,  Hiroshi Yoshimoto ,  Masahito Ide ,  Takao Manabe

IPC: H01L51/52 ,  H01L51/56 ,  H01L27/32

Abstract: The present disclosure is directed to a light-shielding colored resin layer formed on a substrate, and a patterned protective layer formed on the colored resin layer. By removing the colored resin layer exposed in an opening of the protective layer by dry etching, thereby patterning the colored resin layer, a partition wall in which the protective layer is provided on a patterned colored resin layer is formed. This partition wall partitions the display surface of an image display device into a plurality of regions; and an image display device is formed by filling spaces, which are partitioned by the partition wall, with a color developing material.

公开(公告)号：US20230155034A1

公开(公告)日：2023-05-18

申请号：US18157082

申请日：2023-01-20

Applicant: KANEKA CORPORATION

Inventor： Hirofumi Inari ,  Hiroshi Yoshimoto ,  Masahito Ide ,  Takao Manabe

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/66742

Abstract: A thin-film transistor element including a gate layer, an oxide semiconductor thin-film, a gate insulating film disposed between the gate layer and the oxide semiconductor thin-film, a pair of source-drain electrodes electrically connected to the oxide semiconductor thin-film, and a resin film covering the oxide semiconductor thin-film is provided. The oxide semiconductor thin-film contains two or more metal elements selected from indium, gallium, zinc, and tin. The resin film is in contact with the oxide semiconductor thin-film. The resin film may include a compound that contains a SiH group. The resin film may be formed by applying a composition including a SiH group-containing compound onto the oxide semiconductor thin-film, and heating the composition.