公开(公告)号：US20240175136A1

公开(公告)日：2024-05-30

申请号：US18121169

申请日：2023-03-14

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hee HAN ,  Unhyeon KANG ,  Eunbi JEONG ,  Soeun AHN ,  Kyoung Ho Jeon

IPC: C23C16/505 ,  C23C16/26 ,  H01J37/32

CPC classification number: C23C16/505 ,  C23C16/26 ,  H01J37/32082 ,  H01J37/32816 ,  H01J2237/332

Abstract: An exemplary embodiment of the present invention can provide a method of manufacturing a graphene film, including preparing a substrate including a carbon layer in a chamber, and forming a graphene layer by forming plasma in the chamber and applying a positive voltage pulse to the substrate.