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公开(公告)号：US20240306395A1
公开(公告)日：2024-09-12
申请号：US18512857
申请日：2023-11-17
Inventor： Hyun-Yong YU , Dong-Gyu JIN
IPC: H10B51/30 , H01L29/66 , H01L29/78 , H01L29/786
CPC classification number: H10B51/30 , H01L29/66969 , H01L29/78391 , H01L29/7869
Abstract: Disclosed are a ferroelectric-based semiconductor device and a method of manufacturing the same. The ferroelectric-based semiconductor device includes a substrate used as a gate; a gate oxide film formed on the substrate; a channel formed on the gate oxide film; and a source/drain formed on the channel, and the semiconductor device is plasma treated. The ferroelectric-based semiconductor device may be used as a memory device and an artificial synaptic device.
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