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    REDUCING TEMPERATURE TRANSITION IN A SUBSTRATE SUPPORT
    1.
    发明申请
    REDUCING TEMPERATURE TRANSITION IN A SUBSTRATE SUPPORT 审中-公开

    公开(公告)号：US20180174879A1

    公开(公告)日：2018-06-21

    申请号：US15897669

    申请日：2018-02-15

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Tao ZHANG ,  Ole WALDMANN ,  Eric A. PAPE

    IPC: H01L21/683 ,  G05D23/19 ,  H01L21/66 ,  H01L21/67

    CPC classification number: H01L21/6831 ,  G05D23/1931 ,  H01L21/67109 ,  H01L21/67248 ,  H01L22/20

    Abstract: A temperature controller for a substrate processing system includes an interface configured to receive a processing temperature corresponding to a desired processing temperature of a substrate. The temperature controller includes a thermal control element controller configured to selectively control a thermal control element to adjust a temperature of a substrate support. The thermal control element controller is further configured to, prior to the substrate being loaded onto the substrate support, determine at least one of a temperature of the substrate support and a temperature of the substrate and, based on the processing temperature and the at least one of the temperature of the substrate support and the temperature of the substrate, control the thermal control element to adjust the temperature of the substrate support to a setpoint temperature that is different than the processing temperature.

    METHOD FOR REDUCING TEMPERATURE TRANSITION IN AN ELECTROSTATIC CHUCK
    2.
    发明申请
    METHOD FOR REDUCING TEMPERATURE TRANSITION IN AN ELECTROSTATIC CHUCK 有权

    公开(公告)号：US20180005859A1

    公开(公告)日：2018-01-04

    申请号：US15692002

    申请日：2017-08-31

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Tao ZHANG ,  Ole WALDMANN ,  Eric A. PAPE

    IPC: H01L21/683 ,  G05D23/19 ,  H01L21/67 ,  H01L21/66

    CPC classification number: H01L21/6831 ,  G05D23/1931 ,  H01L21/67109 ,  H01L21/67248 ,  H01L22/20

    Abstract: A method for controlling a substrate temperature in a substrate processing system includes determining a temperature difference between the substrate temperature before the substrate is loaded onto a substrate support device and a desired temperature for the substrate support device and, during a first period, controlling a thermal control element to adjust the temperature of the substrate support device to a temperature value based on the temperature difference. The temperature value is not equal to the desired temperature for the substrate support device. The method further includes loading the substrate onto the substrate support device after the first period begins and before the temperature of the substrate support device returns to the desired temperature and, during a second period that follows the first period, controlling the temperature of the substrate support device to the desired temperature for the substrate support device.

    MATCHED TCR JOULE HEATER DESIGNS FOR ELECTROSTATIC CHUCKS
    3.
    发明申请
    MATCHED TCR JOULE HEATER DESIGNS FOR ELECTROSTATIC CHUCKS 审中-公开

    公开(公告)号：US20200335378A1

    公开(公告)日：2020-10-22

    申请号：US16921661

    申请日：2020-07-06

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Eric A. PAPE

    IPC: H01L21/683 ,  H01L21/67

    Abstract: A method of forming a substrate support in a substrate processing system includes forming at least one ceramic layer and arranging a plurality of thermal elements adjacent to the ceramic layer in one or more thermal zones. Each of the thermal zones includes at least one of the thermal elements and each of the thermal elements includes a first resistive material having a positive thermal coefficient of resistance (TCR) and a second resistive material having a negative TCR. The second resistive material is electrically connected to the first resistive material. At least one of the first resistive material and the second resistive material of each of the thermal elements is electrically connected to a power supply to receive power and each of the thermal elements heats a respective one of the thermal zones based on the received power.

    PERMANENT SECONDARY EROSION CONTAINMENT FOR ELECTROSTATIC CHUCK BONDS
    4.
    发明申请
    PERMANENT SECONDARY EROSION CONTAINMENT FOR ELECTROSTATIC CHUCK BONDS 审中-公开

    公开(公告)号：US20190311935A1

    公开(公告)日：2019-10-10

    申请号：US16452462

    申请日：2019-06-25

    Applicant: Lam Research Corporation

    Inventor： Eric A. PAPE

    IPC: H01L21/683 ,  H01J37/32 ,  H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  C23C16/44

    Abstract: A substrate support in a substrate processing system includes a baseplate, a ceramic layer, and a bond layer. The ceramic layer is arranged on the baseplate to support a substrate. The bond layer is arranged between the ceramic layer and the baseplate. A seal is arranged between the ceramic layer and the baseplate around an outer perimeter of the bond layer. The seal includes an inner layer formed adjacent to the bond layer and an outer layer formed adjacent to the inner layer such that the inner layer is between the outer layer and the bond layer. The inner layer comprises a first material and the outer layer comprises a second material.

    DETERMINING AND CONTROLLING SUBSTRATE TEMPERATURE DURING SUBSTRATE PROCESSING
    7.
    发明申请
    DETERMINING AND CONTROLLING SUBSTRATE TEMPERATURE DURING SUBSTRATE PROCESSING 有权

    公开(公告)号：US20210143037A1

    公开(公告)日：2021-05-13

    申请号：US17045887

    申请日：2019-04-08

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Jeremy George SMITH ,  Eric A. PAPE

    IPC: H01L21/67 ,  H01L21/687 ,  G05B17/02

    Abstract: A temperature controller for substrate processing system includes memory that stores a temperature control model that correlates a heat transfer gas pressure and a first temperature of a substrate support to a second temperature of a substrate arranged on the substrate support, a temperature calculation module configured to calculate the second temperature of the substrate using the heat transfer gas pressure, the first temperature of the substrate support, and the temperature control model, and a heat transfer gas control module configured to adjust the heat transfer gas pressure based on the second temperature of the substrate calculated by the temperature calculation module and a desired third temperature of the substrate.

    SURFACE COATING FOR PLASMA PROCESSING CHAMBER COMPONENTS
    10.
    发明申请
    SURFACE COATING FOR PLASMA PROCESSING CHAMBER COMPONENTS 有权

    公开(公告)号：US20210292893A1

    公开(公告)日：2021-09-23

    申请号：US17261812

    申请日：2019-07-19

    Applicant: Lam Research Corporation

    Inventor： Slobodan MITROVIC ,  Jeremy George SMITH ,  Tony Shaleen KAUSHAL ,  Eric A. PAPE

    IPC: C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C25D11/24 ,  C23C16/40

    Abstract: A method for coating a component of a plasma processing chamber is provided. An electrolytic oxidation coating is formed over a surface of the component, wherein the electrolytic oxidation coating has a plurality of pores, wherein the electrolytic oxidation coating has a thickness and at least some of the plurality of pores extends through the thickness of the electrolytic oxidation coating. An atomic layer deposition is deposited on the electrolytic oxidation coating. The atomic layer deposition comprises a plurality of cycles, where each cycle comprises flowing a first reactant, wherein the first reactant forms a first reactant layer in the pores of the electrolytic oxidation coating, wherein the first reactant layer extends through the thickness of the electrolytic oxidation coating, stopping the flow of the first reactant, flowing a second reactant, wherein the second reactant reacts with the first reactant layer, and stopping the flow of the second reactant.

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