公开(公告)号：US20230238220A1

公开(公告)日：2023-07-27

申请号：US18129370

申请日：2023-03-31

Applicant: Lam Research Corporation

Inventor： Douglas KEIL ,  Edward J. AUGUSTYNIAK ,  Karl Frederick LEESER ,  Mohamed SABRI

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32495 ,  H01J37/3244 ,  H01J37/32623 ,  C23C16/45565 ,  H01J37/3255 ,  H01J37/32091

Abstract: A system includes an electrode. The electrode includes a showerhead having a first stem portion and a head portion. A plurality of dielectric layers is vertically stacked between the electrode and a first surface of a conducting structure. The plurality of dielectric layers includes M dielectric layers arranged adjacent to the head portion and P dielectric portions arranged around the first stem portion. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface. A number of the plurality of dielectric layers and sizes of the first gap, the second gap, and the third gap are selected to prevent parasitic plasma between the first surface and the electrode.

公开(公告)号：US20160372318A1

公开(公告)日：2016-12-22

申请号：US15255337

申请日：2016-09-02

Applicant: LAM RESEARCH CORPORATION

Inventor： Sesha VARADARAJAN ,  Shankar SWAMINATHAN ,  Saangrut SANGPLUNG ,  Frank PASQUALE ,  Ted MINSHALL ,  Adrien LAVOIE ,  Mohamed SABRI ,  Cody BARNETT

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/505 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45597 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/00 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02274

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.

公开(公告)号：US20190172684A1

公开(公告)日：2019-06-06

申请号：US16267932

申请日：2019-02-05

Applicant: Lam Research Corporation

Inventor： Douglas KEIL ,  Edward J. AUGUSTYNIAK ,  Karl Frederick LEESER ,  Mohamed SABRI

IPC: H01J37/32

Abstract: A system includes an electrode. The electrode includes a showerhead having a first stem portion and a head portion. A plurality of dielectric layers is vertically stacked between the electrode and a first surface of a conducting structure. The plurality of dielectric layers includes M dielectric layers arranged adjacent to the head portion and P dielectric portions arranged around the first stem portion. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface. A number of the plurality of dielectric layers and sizes of the first gap, the second gap, and the third gap are selected to prevent parasitic plasma between the first surface and the electrode.