公开(公告)号：US20190385817A1

公开(公告)日：2019-12-19

申请号：US16556551

申请日：2019-08-30

Applicant: LAM RESEARCH CORPORATION

Inventor： Richard PHILLIPS ,  Ryan BLAQUIERE ,  Shankar SWAMINATHAN

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/44

Abstract: A processing chamber in a substrate processing system includes an upper surface, sidewalls, and a bottom surface and a showerhead connected to and extending downward from the upper surface of the processing chamber. The showerhead includes a stem portion and a base portion. An inverted conical surface is arranged adjacent to the upper surface and the sidewalls of the processing chamber and includes an angled surface arranged to redirect gas flow above the showerhead from a horizontal direction to a downward direction and into a gap between a radially outer portion of the base portion and the sidewalls of the processing chamber.

公开(公告)号：US20160372318A1

公开(公告)日：2016-12-22

申请号：US15255337

申请日：2016-09-02

Applicant: LAM RESEARCH CORPORATION

Inventor： Sesha VARADARAJAN ,  Shankar SWAMINATHAN ,  Saangrut SANGPLUNG ,  Frank PASQUALE ,  Ted MINSHALL ,  Adrien LAVOIE ,  Mohamed SABRI ,  Cody BARNETT

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/505 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45597 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/00 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02274

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.