公开(公告)号：US20180127868A1

公开(公告)日：2018-05-10

申请号：US15843683

申请日：2017-12-15

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Hong SHIH ,  Nash ANDERSON ,  Tom STEVENSON ,  John DAUGHERTY ,  John Michael KERNS ,  Robert Griffith O'NEILL

IPC: C23C14/56 ,  C23C16/455 ,  C23C16/44 ,  C23C16/04

CPC classification number: C23C14/564 ,  C23C16/045 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45525 ,  Y10T428/263 ,  Y10T428/31504 ,  Y10T428/31551 ,  Y10T428/31678 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

Abstract: A fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus is provided. The fluid handling component comprises interior fluid wetted surfaces and an atomic layer deposition (ALD) or molecular layer deposition (MLD) barrier coating on the interior fluid wetted surfaces wherein the fluid wetted surfaces which include the ALD or MLD barrier coating are configured to be contacted by a process gas and/or fluid during a semiconductor substrate processing process wherein the ALD or MLD barrier coating protects the underlying fluid wetted surfaces from erosion and/or corrosion.

公开(公告)号：US20150337450A1

公开(公告)日：2015-11-26

申请号：US14817742

申请日：2015-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong SHIH ,  Lin XU ,  John Michael KERNS ,  William CHARLES ,  John DAUGHERTY ,  Sivakami RAMANATHAN ,  Russell ORMOND ,  Robert G. O'NEILL ,  Tom STEVENSON

IPC: C25D11/02 ,  H01L21/67 ,  C23C28/00 ,  C23C24/00 ,  C25D11/16 ,  C25D11/12

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。