公开(公告)号：US20230411124A1

公开(公告)日：2023-12-21

申请号：US18034635

申请日：2021-11-01

Applicant: Lam Research Corporation

Inventor： John Michael KERNS ,  David Joseph WETZEL ,  Lin XU ,  Pankaj HAZARIKA ,  Douglas DETERT ,  Lei LIU ,  Eric A. PAPE

IPC: H01J37/32 ,  C04B41/00 ,  C04B35/01

CPC classification number: H01J37/32477 ,  C04B41/0054 ,  H01J37/32467 ,  C04B2235/94 ,  C04B2235/666 ,  C04B2235/6028 ,  C04B35/01

Abstract: A method for forming a component for a plasma processing chamber is provided. An internal mold is provided. An external mold is provided around the internal mold. The external mold is filled with a ceramic powder, wherein the ceramic powder surrounds the internal mold. The ceramic powder is sintered to form a solid part. The solid part is removed from the external mold.

公开(公告)号：US20180127868A1

公开(公告)日：2018-05-10

申请号：US15843683

申请日：2017-12-15

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Hong SHIH ,  Nash ANDERSON ,  Tom STEVENSON ,  John DAUGHERTY ,  John Michael KERNS ,  Robert Griffith O'NEILL

IPC: C23C14/56 ,  C23C16/455 ,  C23C16/44 ,  C23C16/04

CPC classification number: C23C14/564 ,  C23C16/045 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45525 ,  Y10T428/263 ,  Y10T428/31504 ,  Y10T428/31551 ,  Y10T428/31678 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

Abstract: A fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus is provided. The fluid handling component comprises interior fluid wetted surfaces and an atomic layer deposition (ALD) or molecular layer deposition (MLD) barrier coating on the interior fluid wetted surfaces wherein the fluid wetted surfaces which include the ALD or MLD barrier coating are configured to be contacted by a process gas and/or fluid during a semiconductor substrate processing process wherein the ALD or MLD barrier coating protects the underlying fluid wetted surfaces from erosion and/or corrosion.

公开(公告)号：US20220392753A1

公开(公告)日：2022-12-08

申请号：US17770147

申请日：2020-10-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin XU ,  Douglas DETERT ,  John DAUGHERTY ,  Pankaj HAZARIKA ,  Satish SRINIVASAN ,  Nash W. ANDERSON ,  John Michael KERNS ,  Robin KOSHY ,  David Joseph WETZEL ,  Lei LIU ,  Eric A. PAPE

IPC: H01J37/32

Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.

公开(公告)号：US20210341377A1

公开(公告)日：2021-11-04

申请号：US17273264

申请日：2019-09-05

Applicant: Lam Research Corporation

Inventor： Amir A. YASSERI ,  Girish M. HUNDI ,  John Michael KERNS ,  Duane OUTKA ,  John DAUGHERTY ,  Cliff LA CROIX

IPC: G01N15/14 ,  G01N1/22

Abstract: An apparatus for measuring contamination on a critical surface of a part is provided. A vessel for mounting the part is provided. An inert gas source is in fluid connection with the vessel and adapted to provide an inert gas to the vessel. At least one diffuser receives the inert gas from the vessel, wherein the critical surface of the part is exposed to the inert gas when the part is mounted in the vessel. At least one analyzer is adapted to receive inert gas from the at least one diffuser and measures contaminants in the inert gas.

公开(公告)号：US20160379806A1

公开(公告)日：2016-12-29

申请号：US14750714

申请日：2015-06-25

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Nash W. ANDERSON ,  John DAUGHERTY ,  Thomas R. STEVENSON ,  John Michael KERNS

IPC: H01J37/32 ,  H02N13/00 ,  C23C16/06 ,  H01L21/683 ,  B32B37/12 ,  C23C16/455

CPC classification number: H01J37/32495 ,  B32B37/18 ,  B32B2311/24 ,  B32B2315/02 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  H01J37/32513 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6833 ,  H02N13/00

Abstract: In accordance with this disclosure, there are provided several inventions, including an apparatus and method for depositing plasma resistant coatings on polymer materials used in a plasma processing chamber. In a particular example, such a coating may be made on a portion of an electrostatic chuck, where the polymer material is a bead surrounding an adhesive between a chuck base and a ceramic top plate.

Abstract translation: 根据本公开，提供了若干发明，包括用于在等离子体处理室中使用的聚合物材料上沉积耐等离子体涂层的装置和方法。 在一个具体实例中，这样的涂层可以在静电卡盘的一部分上制成，其中聚合物材料是围绕卡盘基底和陶瓷顶板之间的粘合剂的珠粒。

公开(公告)号：US20230088848A1

公开(公告)日：2023-03-23

申请号：US17792109

申请日：2021-01-21

Applicant: Lam Research Corporation

Inventor： Lin XU ,  David Joseph WETZEL ,  Satish SRINIVASAN ,  Robin KOSHY ,  John Michael KERNS ,  John DAUGHERTY

IPC: C23C24/08 ,  C23C4/11 ,  C23C4/08 ,  C04B41/50

Abstract: A component of a plasma processing chamber having a coating on at least one surface that comprises yttrium aluminum. The coating is an aerosol deposited coating from a powder mixture of an yttrium oxide powder and an aluminum-containing powder and having an yttrium to aluminum ratio of 4:1 to 1:4 by molar number. The coating can be annealed to form a porous ternary oxide.

公开(公告)号：US20230020387A1

公开(公告)日：2023-01-19

申请号：US17777656

申请日：2020-11-19

Applicant: LAM RESEARCH CORPORATION

Inventor： David Joseph WETZEL ,  Lin XU ,  John DAUGHERTY ,  John Michael KERNS ,  Satish SRINIVASAN ,  Robin KOSHY ,  Michael LOPEZ ,  Douglas DETERT

IPC: C23C16/40 ,  C23C4/11 ,  H01J37/32 ,  C23C16/56 ,  C23C14/08 ,  C23C14/58

Abstract: A method for forming a coating on a component of a substrate processing system includes arranging the component in a processing chamber and applying a ceramic material to form the coating on one or more surfaces of the component. The ceramic material is comprised of a mixture including a rare earth oxide and having a grain size of less than 150 nm and is applied while a temperature within the processing chamber is less than 400° C. The coating has a thickness of less than 30 μm. A heat treatment process is performed on the coated component in a heat treatment chamber. The heat treatment process includes increasing a temperature of the heat treatment chamber from a first temperature to a second temperature that does not exceed a melting temperature of the mixture over a first period and maintaining the second temperature for a second period.

公开(公告)号：US20150337450A1

公开(公告)日：2015-11-26

申请号：US14817742

申请日：2015-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong SHIH ,  Lin XU ,  John Michael KERNS ,  William CHARLES ,  John DAUGHERTY ,  Sivakami RAMANATHAN ,  Russell ORMOND ,  Robert G. O'NEILL ,  Tom STEVENSON

IPC: C25D11/02 ,  H01L21/67 ,  C23C28/00 ,  C23C24/00 ,  C25D11/16 ,  C25D11/12

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。