公开(公告)号：US20150060913A1

公开(公告)日：2015-03-05

申请号：US14243839

申请日：2014-04-02

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Po-Hung TSOU ,  Tzu-Hung CHOU

IPC: H01L33/24 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L33/005

Abstract: A light-emitting diode is provided. The light-emitting diode includes an N-type epitaxial layer, a light-emitting layer disposed on a portion of the N-type epitaxial layer to expose a partial surface of the N-type epitaxial layer, and a P-type epitaxial layer disposed on the light-emitting layer, wherein the P-type epitaxial layer has a ladder-shaped sidewall. The light-emitting diode further includes a P-type electrode disposed on the P-type epitaxial layer and an N-type electrode disposed on the exposed surface of the N-type epitaxial layer. Furthermore, a method of fabricating a light-emitting diode is also provided. The method includes performing an anisotropic-etching process to a P-type epitaxial layer to form a rounded or a right-angled ladder on the sidewall of the P-type epitaxial layer.

Abstract translation: 提供了一种发光二极管。 发光二极管包括N型外延层，设置在N型外延层的一部分上以暴露N型外延层的局部表面的发光层和设置在N型外延层中的P型外延层 在其中P型外延层具有梯形侧壁的发光层上。 发光二极管还包括设置在P型外延层上的P型电极和设置在N型外延层的暴露表面上的N型电极。 此外，还提供了制造发光二极管的方法。 该方法包括对P型外延层执行各向异性蚀刻处理，以在P型外延层的侧壁上形成圆形或直角梯形。

公开(公告)号：US20150129900A1

公开(公告)日：2015-05-14

申请号：US14327667

申请日：2014-07-10

Applicant: Lextar Electronics Corporation

Inventor： Shih-Pu YANG ,  Po-Hung TSOU

IPC: H01L33/60

CPC classification number: H01L33/46 ,  H01L27/156

Abstract: A light emitting diode structure includes a patterned substrate, a light emitting diode die, and a first reflector. The light emitting diode die is disposed on the patterned substrate and emitting a light in wavelength λ. The first reflector is formed over the patterned substrate, covering the patterned substrate which is not covered by the light emitting diode die, to reflect the light emitted from the light emitting diode die. Also, plurality of light emitting diode die can be connected in series to form a high voltage light emitting diode structure.

Abstract translation: 发光二极管结构包括图案化衬底，发光二极管管芯和第一反射器。 发光二极管管芯设置在图案化衬底上并发射波长λ的光。 第一反射器形成在图案化衬底上，覆盖未被发光二极管管芯覆盖的图案化衬底，以反射从发光二极管管芯发射的光。 此外，多个发光二极管管芯可以串联连接以形成高压发光二极管结构。

公开(公告)号：US20150048303A1

公开(公告)日：2015-02-19

申请号：US14274953

申请日：2014-05-12

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Po-Hung TSOU ,  Tzu-Hung CHOU

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/42 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L33/007 ,  H01L33/42

Abstract: The disclosure provides a light-emitting diode (LED) and a method for manufacturing the same. The LED includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first current spreading layer, a current blocking having a plurality of nitrogen vacancies, and a second current spreading layer, wherein the second spreading layer includes a current spreading area and a current blocking area. The current blocking area is formed the nitrogen vacancies by high power sputtering on the current blocking area of the second semiconductor layer, so as to increase the resistance of the current blocking area and occur the efficiency of current blocking.

Abstract translation: 本发明提供一种发光二极管（LED）及其制造方法。 LED包括第一半导体层，发光层，第二半导体层，第一电流扩展层，具有多个氮空位的电流阻挡以及第二电流扩散层，其中第二扩散层包括电流 扩展区域和当前阻塞区域。 通过高功率溅射在第二半导体层的电流阻挡区域上形成电流阻挡区域，以增加电流阻挡区域的电阻并发生电流阻塞的效率。

公开(公告)号：US20150087097A1

公开(公告)日：2015-03-26

申请号：US14276938

申请日：2014-05-13

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Po-Hung TSOU ,  Tzu-Hung CHOU

IPC: H01L33/00 ,  H01L33/42

CPC classification number: H01L33/0095 ,  H01L33/42 ,  H01L2933/0016

Abstract: The present disclosure provides a method for manufacturing a light-emitting diode, including: providing a substrate; forming a first semiconductor layer over the substrate; forming an active layer over the first semiconductor layer; forming a second semiconductor layer over the active layer; removing a portion of the second semiconductor layer and a portion of the active layer to expose a portion of the first semiconductor layer; conform to depositing a transparent conductive layer; forming a patterned mask layer over the transparent conductive layer; performing a wet etch process to remove a portion of the transparent conductive layer; performing a dry etch process to completely remove the portion of the transparent conductive layer not covered by the patterned mask layer; removing the patterned mask layer; and forming a first electrode and a second electrode.

Abstract translation: 本公开提供一种制造发光二极管的方法，包括：提供基板; 在所述衬底上形成第一半导体层; 在所述第一半导体层上形成有源层; 在所述有源层上形成第二半导体层; 去除所述第二半导体层的一部分和所述有源层的一部分以暴露所述第一半导体层的一部分; 符合沉积透明导电层; 在所述透明导电层上形成图案化掩模层; 执行湿蚀刻工艺以去除所述透明导电层的一部分; 执行干蚀刻工艺以完全去除未被图案化掩模层覆盖的透明导电层的部分; 去除图案化掩模层; 以及形成第一电极和第二电极。

公开(公告)号：US20150076445A1

公开(公告)日：2015-03-19

申请号：US14207373

申请日：2014-03-12

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Po-Hung TSOU

IPC: H01L33/36 ,  H01L33/32 ,  H01L33/06

CPC classification number: H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L2933/0016

Abstract: A light-emitting diode is provided. The light-emitting diode includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A P-type electrode includes a body part and an extension part, wherein the body part is disposed on a corner of an upper surface of the P-type semiconductor layer and the extension part extends from the body part onto the N-type semiconductor layer along a sidewall of the P-type semiconductor layer adjacent to the N-type semiconductor layer. An N-type electrode is disposed on the N-type semiconductor layer. Moreover, a current blocking layer is disposed under the P-type electrode. A transparent conductive layer is disposed on a partial upper surface of the P-type semiconductor layer.

Abstract translation: 提供了一种发光二极管。 发光二极管包括N型半导体层，发光层和P型半导体层。 P型电极包括主体部分和延伸部分，其中主体部分设置在P型半导体层的上表面的拐角处，并且延伸部分从主体部分延伸到N型半导体层 沿着与N型半导体层相邻的P型半导体层的侧壁。 N型电极设置在N型半导体层上。 此外，电流阻挡层设置在P型电极的下方。 透明导电层设置在P型半导体层的部分上表面上。