公开(公告)号：US20150060913A1

公开(公告)日：2015-03-05

申请号：US14243839

申请日：2014-04-02

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Po-Hung TSOU ,  Tzu-Hung CHOU

IPC: H01L33/24 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L33/005

Abstract: A light-emitting diode is provided. The light-emitting diode includes an N-type epitaxial layer, a light-emitting layer disposed on a portion of the N-type epitaxial layer to expose a partial surface of the N-type epitaxial layer, and a P-type epitaxial layer disposed on the light-emitting layer, wherein the P-type epitaxial layer has a ladder-shaped sidewall. The light-emitting diode further includes a P-type electrode disposed on the P-type epitaxial layer and an N-type electrode disposed on the exposed surface of the N-type epitaxial layer. Furthermore, a method of fabricating a light-emitting diode is also provided. The method includes performing an anisotropic-etching process to a P-type epitaxial layer to form a rounded or a right-angled ladder on the sidewall of the P-type epitaxial layer.

Abstract translation: 提供了一种发光二极管。 发光二极管包括N型外延层，设置在N型外延层的一部分上以暴露N型外延层的局部表面的发光层和设置在N型外延层中的P型外延层 在其中P型外延层具有梯形侧壁的发光层上。 发光二极管还包括设置在P型外延层上的P型电极和设置在N型外延层的暴露表面上的N型电极。 此外，还提供了制造发光二极管的方法。 该方法包括对P型外延层执行各向异性蚀刻处理，以在P型外延层的侧壁上形成圆形或直角梯形。

公开(公告)号：US20150087097A1

公开(公告)日：2015-03-26

申请号：US14276938

申请日：2014-05-13

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Po-Hung TSOU ,  Tzu-Hung CHOU

IPC: H01L33/00 ,  H01L33/42

CPC classification number: H01L33/0095 ,  H01L33/42 ,  H01L2933/0016

Abstract: The present disclosure provides a method for manufacturing a light-emitting diode, including: providing a substrate; forming a first semiconductor layer over the substrate; forming an active layer over the first semiconductor layer; forming a second semiconductor layer over the active layer; removing a portion of the second semiconductor layer and a portion of the active layer to expose a portion of the first semiconductor layer; conform to depositing a transparent conductive layer; forming a patterned mask layer over the transparent conductive layer; performing a wet etch process to remove a portion of the transparent conductive layer; performing a dry etch process to completely remove the portion of the transparent conductive layer not covered by the patterned mask layer; removing the patterned mask layer; and forming a first electrode and a second electrode.

Abstract translation: 本公开提供一种制造发光二极管的方法，包括：提供基板; 在所述衬底上形成第一半导体层; 在所述第一半导体层上形成有源层; 在所述有源层上形成第二半导体层; 去除所述第二半导体层的一部分和所述有源层的一部分以暴露所述第一半导体层的一部分; 符合沉积透明导电层; 在所述透明导电层上形成图案化掩模层; 执行湿蚀刻工艺以去除所述透明导电层的一部分; 执行干蚀刻工艺以完全去除未被图案化掩模层覆盖的透明导电层的部分; 去除图案化掩模层; 以及形成第一电极和第二电极。

公开(公告)号：US20150129913A1

公开(公告)日：2015-05-14

申请号：US14336438

申请日：2014-07-21

Applicant: Lextar Electronics Corporation

Inventor： Po-Yang CHANG ,  Tzu-Hung CHOU

IPC: H01L33/40 ,  H01L31/0224 ,  H01M4/46 ,  H01L33/26

CPC classification number: H01L33/405 ,  H01L31/022433 ,  H01L33/26 ,  H01M4/463

Abstract: An electrode structure includes a first diffusion barrier layer, an aluminum reflective layer formed over the first diffusion barrier layer. The aluminum reflective layer has a thickness from about 500 angstroms (Å) to less than 2,000 Å, a second diffusion barrier layer formed over the aluminum reflective layer, and an electrode layer overlying the second diffusion barrier layer. The electrode structure is applicable in a light emitting diode device.

Abstract translation: 电极结构包括第一扩散阻挡层，形成在第一扩散阻挡层上的铝反射层。 铝反射层具有约500埃（Å）至小于Å的厚度，形成在铝反射层上的第二扩散阻挡层和覆盖第二扩散阻挡层的电极层。 电极结构适用于发光二极管装置。

公开(公告)号：US20150048303A1

公开(公告)日：2015-02-19

申请号：US14274953

申请日：2014-05-12

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Po-Hung TSOU ,  Tzu-Hung CHOU

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/42 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L33/007 ,  H01L33/42

Abstract: The disclosure provides a light-emitting diode (LED) and a method for manufacturing the same. The LED includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first current spreading layer, a current blocking having a plurality of nitrogen vacancies, and a second current spreading layer, wherein the second spreading layer includes a current spreading area and a current blocking area. The current blocking area is formed the nitrogen vacancies by high power sputtering on the current blocking area of the second semiconductor layer, so as to increase the resistance of the current blocking area and occur the efficiency of current blocking.

Abstract translation: 本发明提供一种发光二极管（LED）及其制造方法。 LED包括第一半导体层，发光层，第二半导体层，第一电流扩展层，具有多个氮空位的电流阻挡以及第二电流扩散层，其中第二扩散层包括电流 扩展区域和当前阻塞区域。 通过高功率溅射在第二半导体层的电流阻挡区域上形成电流阻挡区域，以增加电流阻挡区域的电阻并发生电流阻塞的效率。

公开(公告)号：US20140374767A1

公开(公告)日：2014-12-25

申请号：US14189136

申请日：2014-02-25

Applicant: Lextar Electronics Corporation

Inventor： Cheng-Chun LAN ,  Tzu-Hung CHOU ,  Chi-Chung CHAO

IPC: H01L27/15

CPC classification number: H01L27/15

Abstract: A light emitting diode (LED) structure includes a substrate, an LED element, a reverse current protection element, a third conductor, and a fourth conductor. The LED element includes a first N-type semiconductor layer, a first lighting layer, a first P-type semiconductor layer, a first transparent conductive layer, a first electrode, and a second electrode. The reverse current protection element is located on the substrate and surrounds the LED element. The reverse current protection element includes a stack layer, a first conductor, and a second conductor. The stack layer is formed on the substrate by sequentially stacking a second N-type semiconductor layer, a second lighting layer, and a second P-type semiconductor layer. The third conductor is electrically connected to the first conductor and the second electrode. The fourth conductor is electrically connected to the second conductor and the first electrode.

Abstract translation: 发光二极管（LED）结构包括基板，LED元件，反向电流保护元件，第三导体和第四导体。 LED元件包括第一N型半导体层，第一发光层，第一P型半导体层，第一透明导电层，第一电极和第二电极。 反向电流保护元件位于基板上并围绕LED元件。 反向电流保护元件包括堆叠层，第一导体和第二导体。 通过顺序堆叠第二N型半导体层，第二发光层和第二P型半导体层，在基板上形成堆叠层。 第三导体电连接到第一导体和第二电极。 第四导体电连接到第二导体和第一电极。