公开(公告)号：US20040140738A1

公开(公告)日：2004-07-22

申请号：US10271454

申请日：2002-10-16

Applicant: Lockheed Martin Corporation

Inventor： Charles E. Seeley ,  Todd G. Wetzel ,  Andrew J. Calver ,  Jeffrey B. Fortin

IPC: H01L041/053

CPC classification number: H01L41/053

Abstract: A piezoelectric actuator and a method of assembling and employing a piezoelectric actuator. This method comprises the steps of positioning an expandable piezoelectric material inside a case, and enclosing a vaporizable liquid in the case. The case is positioned in a high temperature environment; and the liquid vaporizes, in that high temperature environment, over a given period of time, to maintain the temperature of the piezoelectric material below a given value for said period of time. Preferably, the vaporizing liquid maintains the temperature of the piezoelectric material substantially constant over that period of time. Also, preferably the case is provided with a pressure responsive valve that opens and closes, in the high temperature environment, to expose the liquid to that environment and control the vaporization of the liquid to maintain the temperature of the piezoelectric material substantially constant over the period of time.

Abstract translation: 压电致动器以及组装和使用压电致动器的方法。 该方法包括将可膨胀压电材料定位在壳体内并将壳体中的可汽化液体包围的步骤。 该案件位于高温环境中; 并且在该高温环境中，液体在给定的时间内蒸发，以将压电材料的温度保持在给定值下一段时间。 优选地，汽化液体在该时间段内保持压电材料的温度基本上恒定。 此外，优选地，在高温环境中优选地设置有打开和关闭的压力响应阀，以将液体暴露于该环境并且控制液体的蒸发以在压缩材料的温度保持基本上恒定的期间 的时间。

公开(公告)号：US20040075368A1

公开(公告)日：2004-04-22

申请号：US10277064

申请日：2002-10-21

Applicant: Lockheed Martin Corporation

Inventor： Charles E. Seeley ,  Matthew C. Nielsen ,  Jeffrey B. Fortin

IPC: H01L041/08

CPC classification number: H01L41/053

Abstract: These and other objectives are attained with a piezoelectric actuator operable over a temperature range, and a method of operating a piezoelectric actuator. The piezoelectric actuator, generally, comprises a support structure, a piezoelectric material supported by the support structuer, and an insert disposed between the support structure and the piezoelectric material. The piezoelectric material and the insert are positioned in series, the piezoelectric material and the insert each have a respective length, and together the piezoelectric material and the insert have a combined length. The length of the piezoelectric material changes in response to a voltage applied to the piezoelectric material. Also, the respective lengths of the piezoelectric material and the insert change, in opposite directions, in response to the same change in temperature, and, in this way, the insert mitigates changes in the combined length of the insert and the piezoelectric material due to temperature changes. Preferably, over a given temperature range, changes in the length of the insert due to temperature changes are substantially equal in magnitude and opposite in direction to changes in the length of the piezoelectric material due to the same temperature changes, so that these temperature changes do not substantially change the combined length of the insert and the piezoelectric material.

Abstract translation: 这些和其它目的通过在温度范围内可操作的压电致动器以及操作压电致动器的方法来实现。 压电致动器通常包括支撑结构，由支撑结构体支撑的压电材料以及设置在支撑结构和压电材料之间的插入件。 压电材料和插入件串联放置，压电材料和插入件各自具有相应的长度，并且压电材料和插入件的组合长度一起组合。 压电材料的长度响应于施加到压电材料的电压而变化。 此外，压电材料和插入件的相应长度响应于相同的温度变化而相反地改变，并且以这种方式，插入件减轻了插入件和压电材料的组合长度的变化，由于 温度变化。 优选地，在给定的温度范围内，由于温度变化导致的插入件长度的变化在幅度方面基本相等，并且由于相同的温度变化而与压电材料的长度方向相反，使得这些温度变化 基本不改变插入件和压电材料的组合长度。

公开(公告)号：US20040256585A1

公开(公告)日：2004-12-23

申请号：US10277028

申请日：2002-10-21

Applicant: Lockheed Martin Corporation

Inventor： Matthew C. Nielsen ,  Laura J. Meyer ,  Todd G. Wetzel ,  Stanton E. Weaver ,  Jeffrey B. Fortin ,  Renato Guida

IPC: F16K031/00

CPC classification number: F16K99/0001 ,  F15C5/00 ,  F16K99/0007 ,  F16K99/0015 ,  F16K99/0048 ,  F16K99/0057 ,  F16K2099/0074

Abstract: A microvalve and a method of forming a microvalve. The microvalve comprises first and second layers, a diaphragm member and a switching means. The first and second layers are secured together to form a valve body that forms an inlet opening for receiving fluid, an outlet opening for conducting fluid from the valve body, and a flow channel for conducting fluid from the inlet to the outlet. The diaphragm is disposed between the layers, and is movable between open and closed positions. In these position, the diaphragm, respectively, allows and blocks the flow of fluid from the inlet to the flow channel. The diaphragm is biased to the closed position, and moves from the closed position to the open position when the pressure of fluid in the inlet reaches a preset value. The switching means is connected to the valve body for moving the diaphragm to the closed position against the pressure of fluid in the inlet. Preferably, the microvalve is constructed out of SiC and stainless steel materials, allowing the microvalve to be used in a harsh environment.

Abstract translation: 微型阀和形成微型阀的方法。 微型阀包括第一和第二层，隔膜构件和开关装置。 第一层和第二层被固定在一起以形成阀体，其形成用于接收流体的入口开口，用于从阀体传导流体的出口，以及用于将流体从入口传导到出口的流动通道。 隔膜设置在层之间，并且可在打开位置和关闭位置之间移动。 在这些位置上，隔膜分别允许和阻止流体从入口到流动通道的流动。 隔膜被偏压到关闭位置，并且当入口中的流体的压力达到预设值时，隔膜从关闭位置移动到打开位置。 切换装置连接到阀体，用于抵抗入口中的流体的压力将隔膜移动到关闭位置。 优选地，微型阀由SiC和不锈钢材料制成，允许微型阀在恶劣的环境中使用。

公开(公告)号：US20040018734A1

公开(公告)日：2004-01-29

申请号：US10202331

申请日：2002-07-24

Applicant: LOCKHEED MARTIN CORPORATION

Inventor： James H. Schermerhorn ,  Matthew C. Nielsen ,  Richard J. Saia ,  Jeffrey B. Fortin

IPC: H01L021/302 ,  H01L021/461 ,  H01L021/311

CPC classification number: B81C1/00619 ,  B81B2203/033 ,  B81C1/00412 ,  B81C2201/0132 ,  B81C2201/016 ,  H01L21/0332 ,  H01L21/3065 ,  H01L21/3081 ,  Y10S438/964

Abstract: A method for creating deep features in a Si-containing substrate for use in fabricating MEMS type devices is provided. The method includes first forming a thin Ni hardmask on a surface of a Si-containing substrate. The Ni hardmask is patterned using conventional photolithography and wet etching so as to expose at least one portion of the underlying Si-containing substrate. The at least one exposed portion of the Si-containing substrate, not containing the patterned hardmask, is then etched in a plasma that includes free radicals generated from a gaseous mixture of chlorine (Cl2), sulfur hexafluoride (SF6) and oxygen (O2). The interaction of the gas species in the plasma yields a rapid silicon etch rate that is highly selective to the Ni hardmask. The etch rate ratio of Si to Ni using the inventive method is greater than 250:1.

Abstract translation: 提供了一种用于制造用于制造MEMS型器件的含Si衬底中的深度特征的方法。 该方法包括首先在含Si衬底的表面上形成薄的Ni硬掩模。 使用常规的光刻和湿法刻蚀图案化Ni硬掩模，以暴露下面的含Si衬底的至少一部分。 然后，在包含由氯（Cl 2），六氟化硫（SF 6）和氧（O 2）的气体混合物产生的自由基的等离子体中蚀刻含有图案化的硬掩模的含Si衬底的至少一个暴露部分， 。 等离子体中的气体物质的相互作用产生了对Ni硬掩模高度选择性的快速硅蚀刻速率。 使用本发明方法的Si与Ni的蚀刻速率比大于250:1。