公开(公告)号：US20040018734A1

公开(公告)日：2004-01-29

申请号：US10202331

申请日：2002-07-24

Applicant: LOCKHEED MARTIN CORPORATION

Inventor： James H. Schermerhorn ,  Matthew C. Nielsen ,  Richard J. Saia ,  Jeffrey B. Fortin

IPC: H01L021/302 ,  H01L021/461 ,  H01L021/311

CPC classification number: B81C1/00619 ,  B81B2203/033 ,  B81C1/00412 ,  B81C2201/0132 ,  B81C2201/016 ,  H01L21/0332 ,  H01L21/3065 ,  H01L21/3081 ,  Y10S438/964

Abstract: A method for creating deep features in a Si-containing substrate for use in fabricating MEMS type devices is provided. The method includes first forming a thin Ni hardmask on a surface of a Si-containing substrate. The Ni hardmask is patterned using conventional photolithography and wet etching so as to expose at least one portion of the underlying Si-containing substrate. The at least one exposed portion of the Si-containing substrate, not containing the patterned hardmask, is then etched in a plasma that includes free radicals generated from a gaseous mixture of chlorine (Cl2), sulfur hexafluoride (SF6) and oxygen (O2). The interaction of the gas species in the plasma yields a rapid silicon etch rate that is highly selective to the Ni hardmask. The etch rate ratio of Si to Ni using the inventive method is greater than 250:1.

Abstract translation: 提供了一种用于制造用于制造MEMS型器件的含Si衬底中的深度特征的方法。 该方法包括首先在含Si衬底的表面上形成薄的Ni硬掩模。 使用常规的光刻和湿法刻蚀图案化Ni硬掩模，以暴露下面的含Si衬底的至少一部分。 然后，在包含由氯（Cl 2），六氟化硫（SF 6）和氧（O 2）的气体混合物产生的自由基的等离子体中蚀刻含有图案化的硬掩模的含Si衬底的至少一个暴露部分， 。 等离子体中的气体物质的相互作用产生了对Ni硬掩模高度选择性的快速硅蚀刻速率。 使用本发明方法的Si与Ni的蚀刻速率比大于250:1。