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1.发明授权Pressure sensor, oscillator, ultrasonic wave sensor and measuring method thereof 有权压力传感器，振荡器，超声波传感器及其测量方法公开(公告)号：US09068899B2
公开(公告)日：2015-06-30
申请号：US13905881
申请日：2013-05-30
Inventor： Zhiwei Wang , Jianhong Mao , Lei Zhang , Deming Tang
CPC classification number: G01L9/12 , G01L9/0045 , G01L9/0073
Abstract: The present invention relates to a pressure sensor, which may include a first electrode plate, a second electrode plate, a third electrode plate, a fourth electrode plate and a fifth electrode plate, which are successively laminated on a substrate, wherein the first electrode plate, the third electrode plate and the fourth electrode plate are fixed to the substrate, the first electrode plate and the second electrode plate are disposed opposite to each other and have a gap formed therebetween, the second electrode plate is suspended over the first electrode plate to constitute a first capacitor; the second electrode plate and the third electrode plate are disposed opposite to each other and have a gap formed therebetween, to constitute a second capacitor; and the fifth electrode plate is suspended over the fourth electrode plate to constitute a third capacitor, and can move along a direction perpendicular to the substrate.
Abstract translation: 压力传感器技术领域本发明涉及压力传感器，其可以包括依次层叠在基板上的第一电极板，第二电极板，第三电极板，第四电极板和第五电极板，其中，第一电极板 所述第三电极板和所述第四电极板固定在所述基板上，所述第一电极板和所述第二电极板彼此相对设置，并且在其间形成间隙，所述第二电极板悬挂在所述第一电极板上， 构成第一电容器; 第二电极板和第三电极板彼此相对设置，并且在其间形成间隙，以构成第二电容器; 并且第五电极板悬挂在第四电极板上以构成第三电容器，并且可以沿着与基板垂直的方向移动。
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2.发明申请PRESSURE SENSOR, OSCILLATOR, ULTRASONIC WAVE SENSOR AND MEASURING METHOD THEREOF 有权压力传感器，振荡器，超声波传感器及其测量方法公开(公告)号：US20130319125A1
公开(公告)日：2013-12-05
申请号：US13905881
申请日：2013-05-30
Inventor： Zhiwei Wang , Jianhong Mao , Lei Zhang , Deming Tang
IPC: G01L9/12
CPC classification number: G01L9/12 , G01L9/0045 , G01L9/0073
Abstract: The present invention relates to a pressure sensor, which may include a first electrode plate, a second electrode plate, a third electrode plate, a fourth electrode plate and a fifth electrode plate, which are successively laminated on a substrate, wherein the first electrode plate, the third electrode plate and the fourth electrode plate are fixed to the substrate, the first electrode plate and the second electrode plate are disposed opposite to each other and have a gap formed therebetween, the second electrode plate is suspended over the first electrode plate to constitute a first capacitor; the second electrode plate and the third electrode plate are disposed opposite to each other and have a gap formed therebetween, to constitute a second capacitor; and the fifth electrode plate is suspended over the fourth electrode plate to constitute a third capacitor, and can move along a direction perpendicular to the substrate.
Abstract translation: 压力传感器技术领域本发明涉及压力传感器，其可以包括依次层叠在基板上的第一电极板，第二电极板，第三电极板，第四电极板和第五电极板，其中，第一电极板 所述第三电极板和所述第四电极板固定在所述基板上，所述第一电极板和所述第二电极板彼此相对设置，并且在其间形成间隙，所述第二电极板悬挂在所述第一电极板上， 构成第一电容器; 第二电极板和第三电极板彼此相对设置，并且在其间形成间隙，以构成第二电容器; 并且第五电极板悬挂在第四电极板上以构成第三电容器，并且可以沿着与基板垂直的方向移动。
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3.发明申请公开(公告)号：US20130240962A1
公开(公告)日：2013-09-19
申请号：US13836346
申请日：2013-03-15
Inventor： Zhiwei Wang , Jianhong Mao , Fengqin Han , Lei Zhang , Deming Tang
IPC: H01L31/02
CPC classification number: H01L31/02002 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L27/14665
Abstract: A photosensitive imaging device and a method for forming a semiconductor device are provided. The method includes: providing a first device layer formed on a first substrate, wherein a conductive top bonding pad layer is formed on the first device layer; providing a continuous second device layer formed on a second substrate, wherein a continuous conductive adhesion layer is formed on the continuous second device layer; bonding the first device layer with the second device layer, where the top bonding pad layer on the first device layer is directly connected with the conductive continuous adhesion layer on the continuous second device layer; removing the second substrate; selectively etching the continuous second device and the continuous conductive adhesion layer to form a groove array; and filling up the groove array with an insulation material to form a plurality of second devices. Alignment accuracy may be improved.
Abstract translation: 提供了一种光敏成像装置和用于形成半导体器件的方法。 该方法包括：提供形成在第一衬底上的第一器件层，其中在第一器件层上形成导电顶焊接层; 提供形成在第二基板上的连续的第二器件层，其中在所述连续的第二器件层上形成连续的导电粘附层; 将第一器件层与第二器件层接合，其中第一器件层上的顶部焊盘层与连续的第二器件层上的导电连续粘合层直接连接; 去除所述第二基板; 选择性地蚀刻连续的第二器件和连续导电粘合层以形成凹槽阵列; 并用绝缘材料填充凹槽阵列以形成多个第二装置。 可以提高对准精度。
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Patent Agency Ranking
公开(公告)号：US08802541B2
公开(公告)日：2014-08-12
申请号：US13896593
申请日：2013-05-17
Inventor： Zhiwei Wang , Jianhong Mao , Lei Zhang , Deming Tang
IPC: H01L21/76
CPC classification number: H01L21/76251 , H01L23/498 , H01L24/05 , H01L24/08 , H01L24/80 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/0381 , H01L2224/03845 , H01L2224/05571 , H01L2224/05572 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/08112 , H01L2224/08121 , H01L2224/08146 , H01L2224/08147 , H01L2224/8009 , H01L2224/80097 , H01L2224/80121 , H01L2224/80357 , H01L2224/80815 , H01L2224/80895 , H01L2224/80896 , H01L2224/80948 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2924/01322 , H01L2924/10253 , H01L2924/12036 , H01L2924/1305 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2924/01032 , H01L2224/80001
Abstract: A low temperature wafer bonding method and a bonded structure are provided. The method includes: providing a first substrate having a plurality of metal pads and a first dielectric layer close to the metal pads, where the metal pads and the first dielectric layer are on a top surface of the first substrate; providing a second substrate having a plurality of semiconductor pads and a second dielectric layer close to the semiconductor pads, where the semiconductor pads and the second dielectric layer are on a top surface of the second substrate; disposing at least one of the metal pads in direct contact with at least one of the semiconductor pads, and disposing the first dielectric layer in direct contact with the second dielectric layer; and bonding the metal pads with the semiconductor pads, and bonding the first dielectric layer with the second dielectric layer.
Abstract translation: 提供了低温晶片接合方法和接合结构。 该方法包括：提供具有多个金属焊盘的第一衬底和靠近金属焊盘的第一电介质层，其中金属焊盘和第一电介质层位于第一衬底的顶表面上; 提供具有多个半导体焊盘的第二衬底和靠近所述半导体焊盘的第二电介质层，其中所述半导体焊盘和所述第二电介质层在所述第二衬底的顶表面上; 将至少一个所述金属焊盘设置成与所述半导体焊盘中的至少一个直接接触，并且将所述第一电介质层设置为与所述第二电介质层直接接触; 以及将所述金属焊盘与所述半导体焊盘接合，以及将所述第一电介质层与所述第二电介质层接合。
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公开(公告)号：US20130307165A1
公开(公告)日：2013-11-21
申请号：US13896593
申请日：2013-05-17
Inventor： Zhiwei Wang , Jianhong Mao , Lei Zhang , Deming Tang
IPC: H01L21/762 , H01L23/498
CPC classification number: H01L21/76251 , H01L23/498 , H01L24/05 , H01L24/08 , H01L24/80 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/0381 , H01L2224/03845 , H01L2224/05571 , H01L2224/05572 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/08112 , H01L2224/08121 , H01L2224/08146 , H01L2224/08147 , H01L2224/8009 , H01L2224/80097 , H01L2224/80121 , H01L2224/80357 , H01L2224/80815 , H01L2224/80895 , H01L2224/80896 , H01L2224/80948 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2924/01322 , H01L2924/10253 , H01L2924/12036 , H01L2924/1305 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2924/01032 , H01L2224/80001
Abstract: A low temperature wafer bonding method and a bonded structure are provided. The method includes: providing a first substrate having a plurality of metal pads and a first dielectric layer close to the metal pads, where the metal pads and the first dielectric layer are on a top surface of the first substrate; providing a second substrate having a plurality of semiconductor pads and a second dielectric layer close to the semiconductor pads, where the semiconductor pads and the second dielectric layer are on a top surface of the second substrate; disposing at least one of the metal pads in direct contact with at least one of the semiconductor pads, and disposing the first dielectric layer in direct contact with the second dielectric layer; and bonding the metal pads with the semiconductor pads, and bonding the first dielectric layer with the second dielectric layer.
Abstract translation: 提供了低温晶片接合方法和接合结构。 该方法包括：提供具有多个金属焊盘的第一衬底和靠近金属焊盘的第一电介质层，其中金属焊盘和第一电介质层位于第一衬底的顶表面上; 提供具有多个半导体焊盘的第二衬底和靠近所述半导体焊盘的第二电介质层，其中所述半导体焊盘和所述第二电介质层在所述第二衬底的顶表面上; 将至少一个所述金属焊盘设置成与所述半导体焊盘中的至少一个直接接触，并且将所述第一电介质层设置为与所述第二电介质层直接接触; 以及将所述金属焊盘与所述半导体焊盘接合，以及将所述第一电介质层与所述第二电介质层接合。
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公开(公告)号：US20130285168A1
公开(公告)日：2013-10-31
申请号：US13870533
申请日：2013-04-25
Inventor： Zhiwei Wang , Deming Tang , Lei Zhang , Jianhong Mao , Fengqin Han
CPC classification number: B81C1/00134 , B81B3/0018 , B81B2201/025 , B81C1/00293 , B81C2203/0145 , G01C19/5783 , G01P15/125
Abstract: A MEMS inertial sensor and a method for manufacturing the same are provided. The method includes: depositing a first carbon layer on a semiconductor substrate; patterning the first carbon layer to form a fixed anchor bolt, an inertial anchor bolt and a bottom sealing ring; forming a contact plug in the fixed anchor bolt and a contact plug in the inertial anchor bolt; forming a first fixed electrode, an inertial electrode and a connection electrode on the first carbon layer, where the first fixed electrode and the inertial electrode constitute a capacitor; forming a second carbon layer on the first fixed electrode and the inertial electrode; and forming a sealing cap layer on the second carbon layer and the top sealing ring. Under an inertial force, only the inertial electrode may move, the fixed electrode will almost not move or vibrate, which improves the accuracy of the MEMS inertial sensor.
Abstract translation: 提供了MEMS惯性传感器及其制造方法。 该方法包括：在半导体衬底上沉积第一碳层; 图案化第一碳层以形成固定的锚定螺栓，惯性锚定螺栓和底部密封环; 在固定的锚栓中形成接触塞，并在惯性锚栓中形成接触塞; 在第一碳层上形成第一固定电极，惯性电极和连接电极，其中第一固定电极和惯性电极构成电容器; 在所述第一固定电极和所述惯性电极上形成第二碳层; 以及在所述第二碳层和所述顶部密封环上形成密封盖层。 在惯性力下，只有惯性电极可以移动，固定电极几乎不会移动或振动，这提高了MEMS惯性传感器的精度。
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7.发明授权公开(公告)号：US08945967B2
公开(公告)日：2015-02-03
申请号：US13836346
申请日：2013-03-15
Inventor： Zhiwei Wang , Jianhong Mao , Fengqin Han , Lei Zhang , Deming Tang
IPC: H01L21/00 , H01L31/02 , H01L27/146
CPC classification number: H01L31/02002 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L27/14665
Abstract: A photosensitive imaging device and a method for forming a semiconductor device are provided. The method includes: providing a first device layer formed on a first substrate, wherein a conductive top bonding pad layer is formed on the first device layer; providing a continuous second device layer formed on a second substrate, wherein a continuous conductive adhesion layer is formed on the continuous second device layer; bonding the first device layer with the second device layer, where the top bonding pad layer on the first device layer is directly connected with the conductive continuous adhesion layer on the continuous second device layer; removing the second substrate; selectively etching the continuous second device and the continuous conductive adhesion layer to form a groove array; and filling up the groove array with an insulation material to form a plurality of second devices. Alignment accuracy may be improved.
Abstract translation: 提供了一种光敏成像装置和用于形成半导体器件的方法。 该方法包括：提供形成在第一衬底上的第一器件层，其中在第一器件层上形成导电顶焊接层; 提供形成在第二基板上的连续的第二器件层，其中在所述连续的第二器件层上形成连续的导电粘附层; 将第一器件层与第二器件层接合，其中第一器件层上的顶部焊盘层与连续的第二器件层上的导电连续粘合层直接连接; 去除所述第二基板; 选择性地蚀刻连续的第二器件和连续导电粘合层以形成凹槽阵列; 并用绝缘材料填充凹槽阵列以形成多个第二装置。 可以提高对准精度。
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公开(公告)号：US08907434B2
公开(公告)日：2014-12-09
申请号：US13870533
申请日：2013-04-25
Inventor： Zhiwei Wang , Deming Tang , Lei Zhang , Jianhong Mao , Fengqin Han
IPC: H01L29/84 , H01L21/00 , B81C1/00 , B81B3/00 , G01P15/125 , G01C19/5783
CPC classification number: B81C1/00134 , B81B3/0018 , B81B2201/025 , B81C1/00293 , B81C2203/0145 , G01C19/5783 , G01P15/125
Abstract: A MEMS inertial sensor and a method for manufacturing the same are provided. The method includes: depositing a first carbon layer on a semiconductor substrate; patterning the first carbon layer to form a fixed anchor bolt, an inertial anchor bolt and a bottom sealing ring; forming a contact plug in the fixed anchor bolt and a contact plug in the inertial anchor bolt; forming a first fixed electrode, an inertial electrode and a connection electrode on the first carbon layer, where the first fixed electrode and the inertial electrode constitute a capacitor; forming a second carbon layer on the first fixed electrode and the inertial electrode; and forming a sealing cap layer on the second carbon layer and the top sealing ring. Under an inertial force, only the inertial electrode may move, the fixed electrode will almost not move or vibrate, which improves the accuracy of the MEMS inertial sensor.
Abstract translation: 提供了MEMS惯性传感器及其制造方法。 该方法包括：在半导体衬底上沉积第一碳层; 图案化第一碳层以形成固定的锚定螺栓，惯性锚定螺栓和底部密封环; 在固定的锚栓中形成接触塞，并在惯性锚栓中形成接触塞; 在第一碳层上形成第一固定电极，惯性电极和连接电极，其中第一固定电极和惯性电极构成电容器; 在所述第一固定电极和所述惯性电极上形成第二碳层; 以及在所述第二碳层和所述顶部密封环上形成密封盖层。 在惯性力下，只有惯性电极可以移动，固定电极几乎不会移动或振动，这提高了MEMS惯性传感器的精度。
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