Abstract:
The present invention relates to a pressure sensor, which may include a first electrode plate, a second electrode plate, a third electrode plate, a fourth electrode plate and a fifth electrode plate, which are successively laminated on a substrate, wherein the first electrode plate, the third electrode plate and the fourth electrode plate are fixed to the substrate, the first electrode plate and the second electrode plate are disposed opposite to each other and have a gap formed therebetween, the second electrode plate is suspended over the first electrode plate to constitute a first capacitor; the second electrode plate and the third electrode plate are disposed opposite to each other and have a gap formed therebetween, to constitute a second capacitor; and the fifth electrode plate is suspended over the fourth electrode plate to constitute a third capacitor, and can move along a direction perpendicular to the substrate.
Abstract:
A photosensitive imaging device and a method for forming a semiconductor device are provided. The method includes: providing a first device layer formed on a first substrate, wherein a conductive top bonding pad layer is formed on the first device layer; providing a continuous second device layer formed on a second substrate, wherein a continuous conductive adhesion layer is formed on the continuous second device layer; bonding the first device layer with the second device layer, where the top bonding pad layer on the first device layer is directly connected with the conductive continuous adhesion layer on the continuous second device layer; removing the second substrate; selectively etching the continuous second device and the continuous conductive adhesion layer to form a groove array; and filling up the groove array with an insulation material to form a plurality of second devices. Alignment accuracy may be improved.
Abstract:
The present invention relates to a pressure sensor, which may include a first electrode plate, a second electrode plate, a third electrode plate, a fourth electrode plate and a fifth electrode plate, which are successively laminated on a substrate, wherein the first electrode plate, the third electrode plate and the fourth electrode plate are fixed to the substrate, the first electrode plate and the second electrode plate are disposed opposite to each other and have a gap formed therebetween, the second electrode plate is suspended over the first electrode plate to constitute a first capacitor; the second electrode plate and the third electrode plate are disposed opposite to each other and have a gap formed therebetween, to constitute a second capacitor; and the fifth electrode plate is suspended over the fourth electrode plate to constitute a third capacitor, and can move along a direction perpendicular to the substrate.
Abstract:
A display device having a MEMS transmissive light valve and a method for forming the same are provided. The method includes: providing a multilayer semiconductor substrate comprising a bottom semiconductor layer, a middle buried layer and a top semiconductor layer; forming a light guide opening in the top semiconductor layer; forming at least one MOS device in a remaining part of the top semiconductor layer; forming an interconnection layer and an interlayer dielectric layer on the at least one MOS; forming a MEMS transmissive light valve, which is electrically connected to the interconnection layer, on the light guide opening, where the MEMS transmissive light valve is surrounded by the interlayer dielectric layer; forming a transparent backplane on a top surface of the interlayer dielectric layer; and removing the bottom semiconductor layer.
Abstract:
A micro-electro-mechanical system based device for adjusting aperture and a manufacturing method thereof are disclosed. The system includes: an opaque deformable aperture ring, multiple groups of conductive deformable crossbeams and conductive structs; and one or more fixed parts. In each group, each conductive deformable crossbeam corresponds to a conductive struct. The conductive deformable crossbeams and the conductive structs are arranged around the deformable aperture ring and spaced from each other. The conductive deformable crossbeams are suspended in the air, their inner edges are connected with an external edge of the deformable aperture ring, and their external edges are connected with the fixed parts. The conductive structs are connected with the fixed parts and remain stationary. Electrostatic force between the conductive deformable crossbeam and the conductive struct causes the deformable aperture ring to be stretched and rotate, so that area of an inner bore of the deformable aperture ring is changed.
Abstract:
A low temperature wafer bonding method and a bonded structure are provided. The method includes: providing a first substrate having a plurality of metal pads and a first dielectric layer close to the metal pads, where the metal pads and the first dielectric layer are on a top surface of the first substrate; providing a second substrate having a plurality of semiconductor pads and a second dielectric layer close to the semiconductor pads, where the semiconductor pads and the second dielectric layer are on a top surface of the second substrate; disposing at least one of the metal pads in direct contact with at least one of the semiconductor pads, and disposing the first dielectric layer in direct contact with the second dielectric layer; and bonding the metal pads with the semiconductor pads, and bonding the first dielectric layer with the second dielectric layer.
Abstract:
A low temperature wafer bonding method and a bonded structure are provided. The method includes: providing a first substrate having a plurality of metal pads and a first dielectric layer close to the metal pads, where the metal pads and the first dielectric layer are on a top surface of the first substrate; providing a second substrate having a plurality of semiconductor pads and a second dielectric layer close to the semiconductor pads, where the semiconductor pads and the second dielectric layer are on a top surface of the second substrate; disposing at least one of the metal pads in direct contact with at least one of the semiconductor pads, and disposing the first dielectric layer in direct contact with the second dielectric layer; and bonding the metal pads with the semiconductor pads, and bonding the first dielectric layer with the second dielectric layer.
Abstract:
A MEMS inertial sensor and a method for manufacturing the same are provided. The method includes: depositing a first carbon layer on a semiconductor substrate; patterning the first carbon layer to form a fixed anchor bolt, an inertial anchor bolt and a bottom sealing ring; forming a contact plug in the fixed anchor bolt and a contact plug in the inertial anchor bolt; forming a first fixed electrode, an inertial electrode and a connection electrode on the first carbon layer, where the first fixed electrode and the inertial electrode constitute a capacitor; forming a second carbon layer on the first fixed electrode and the inertial electrode; and forming a sealing cap layer on the second carbon layer and the top sealing ring. Under an inertial force, only the inertial electrode may move, the fixed electrode will almost not move or vibrate, which improves the accuracy of the MEMS inertial sensor.
Abstract:
A micro-electro-mechanical system based device for adjusting aperture and a manufacturing method thereof are disclosed. The system includes: an opaque deformable aperture ring, multiple groups of conductive deformable crossbeams and conductive structs; and one or more fixed parts. In each group, each conductive deformable crossbeam corresponds to a conductive struct. The conductive deformable crossbeams and the conductive structs are arranged around the deformable aperture ring and spaced from each other. The conductive deformable crossbeams are suspended in the air, their inner edges are connected with an external edge of the deformable aperture ring, and their external edges are connected with the fixed parts. The conductive structs are connected with the fixed parts and remain stationary. Electrostatic force between the conductive deformable crossbeam and the conductive struct causes the deformable aperture ring to be stretched and rotate, so that area of an inner bore of the deformable aperture ring is changed.
Abstract:
A micro-electro-mechanical system based focusing device and manufacturing method thereof are disclosed. The system includes: a deformable lens, multiple groups of conductive deformable crossbeams and conductive structs; and one or more fixed parts. In each group, each conductive deformable crossbeam corresponds to a conductive struct. The conductive deformable crossbeams and the conductive structs are arranged around the deformable lens and spaced from each other. The conductive deformable crossbeams are suspended in the air, their inner edges are connected with an external edge of the deformable lens and their external edges are connected with the fixed parts. The conductive structs are fixedly connected with the fixed parts and remain stationary. Electrostatic force between the conductive deformable crossbeam and the conductive struct causes the deformable lens to be stretched and rotate, thus, surface curvature and focal length are changed. The device has a small size, low power consumption and low manufacturing cost.